Quantitative grain growth and rotation probed by in-situ TEM straining and orientation mapping in small grained Al thin films

2015 ◽  
Vol 99 ◽  
pp. 5-8 ◽  
Author(s):  
F. Mompiou ◽  
M. Legros
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
In Situ Tem ◽  
Orientation Mapping

In situ TEM Observations of Grain Growth in Nanograined Thin Films

2004 ◽  
Vol 854 ◽  
Author(s):  
K. Hattar ◽  
J. Gregg ◽  
J. Han ◽  
T. Saif ◽  
I. M. Robertson
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Elevated Temperatures ◽  
Critical Role ◽  
Grain Structure ◽  
In Situ Tem ◽  
Free Standing ◽  
Transmission Electron Microscopy Analysis ◽  
Cu Films

ABSTRACTIn situ transmission electron microscopy analysis is used to study the stability of nanograined and ultra-fine grained thin films at elevated temperatures. In the free-standing Au and Cu films, grain growth was dependent on annealing temperature and time with growth observed in both materials at temperatures greater than 373K. Both materials exhibited abnormal grain growth although it was more prevalent in Au than in Cu, which may be a consequence of pinning of the Cu grain boundaries by impurities. The formation and destruction of twins was observed to play a critical role in the grain growth, with the twins retarding the growth in gold, but not in Cu. In constrained Au films no grain growth was observed on annealing at temperatures below 636 K. At 636 K, the eutectic temperature, the microstructure transformed to the eutectic structure with the first stage being the annihilation of the grain structure.

scholarly journals In situ TEM observations of thickness effect on grain growth in pure titanium thin films

2021 ◽  
Vol 173 ◽  
pp. 110929
Author(s):  
Chaogang Ding ◽  
Wanji Chen ◽  
Shima Sabbaghianrad ◽  
Jie Xu ◽  
Debin Shan ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Pure Titanium ◽  
Thickness Effect ◽  
In Situ Tem ◽  
Titanium Thin Films

In-situ TEM observations of abnormal grain growth, coarsening, and substrate de-wetting in nanocrystalline Ag thin films

2000 ◽  
Vol 370 (1-2) ◽  
pp. 54-62 ◽  
Author(s):  
Rand Dannenberg ◽  
E.A. Stach ◽  
J.R. Groza ◽  
B.J. Dresser
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Abnormal Grain Growth ◽  
In Situ Tem

IN-SITU TEM INVESTIGATION ON NUCLEATION AND GROWTH BEHAVIOR OF P-DOPED Si THIN FILMS

2009 ◽  
Vol 23 (31n32) ◽  
pp. 3747-3751
Author(s):  
KYOU-HYUN KIM ◽  
JONG-HYUN SEO ◽  
SANG-WON YOON ◽  
KON-BAE LEE ◽  
JIN-HA WHANG ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Carrier Mobility ◽  
Nucleation And Growth ◽  
Growth Behavior ◽  
In Situ Tem ◽  
Si Nanocrystals ◽  
Lower Temperature ◽  
Phosphorus Doped

The nucleation and growth behaviors of undoped and phosphorus doped polycrystalline Si thin films were investigated by in-situ TEM observations. Polycrystalline Si thin films were partially changed to amorphous by ion implantations. A normal grain growth was observed in the undoped Si thin films during heating. On the other hand, the P -doped sample showed the recovery and growth at grain boundary as well as the nucleation of Si nanocrystals at amorphous regions. Although the amorphous hindered the grain growth and acted as the nucleation source of Si nanocrystals at lower temperature, the final grain size of polycrystalline Si at 650°C was larger in the P -doped sample. The carrier mobility of the P -doped Si thin films not only increased with heat treatments, but also was corresponding to the microstructural evolution.

scholarly journals TEM and SEM in-situ annealing of nanocrystalline copper thin films

2008 ◽  
Vol 14 (S3) ◽  
pp. 49-52 ◽  
Author(s):  
S. Simões ◽  
R. Calinas ◽  
P.J. Ferreira ◽  
F. Viana ◽  
M.T. Vieira ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Large Fraction ◽  
Structural Features ◽  
Nucleation And Growth ◽  
Coarse Grained ◽  
Mechanical Resistance ◽  
In Situ Tem ◽  
Nanocrystalline Metals

Materials mechanical resistance is known to depend on the size of structural features, accordingly to the familiar HallPetch equation. For the nanometer range of grain sizes, this relationship breaks down and a change of the grain size exponent is needed to satisfy this dependency. Nevertheless, the superior strength of the nanocrystalline material relays on the small dimension of its grains. Characterization of the thermal stability of these materials becomes relevant since a large fraction of atoms are in the grain boundaries and, as a result, its structure posses a large excess of energy that promotes grain growth. Grain growth in nanocrystalline metals has been observed well below the temperatures needed to promote grain growth in coarse grained materials; in some cases, even at room temperature. From this perspective, the study of grain growth in nanocrystalline metals is crucial for the development of new nanocrystalline materials with outstanding mechanical properties. There are many studies that propose models to explain the mechanism of nucleation and growth of annealing twins in F.C.C. materials. In-situ TEM and SEM techniques are invaluable for understanding and characterizing dynamic microstructural changes like nucleation and growth of grains and twins. This is an important observation because twinning affects the properties of materials and so is essential to comprehend the mechanism of twin formation. Other advantage of the in-situ TEM technique is the study of grain growth in ultra fine film with a thickness in the range of 50 to 100 nm. With these techniques, the mechanisms and kinetics of grain growth in nanocrystalline thin films can be observed and studied in real time.

Mechanisms of Grain Growth in Free-Standing Nanograined Gold Thin Films

2005 ◽  
Vol 907 ◽  
Author(s):  
J. A. Gregg ◽  
K Hattar ◽  
C H Lei ◽  
I M Robertson
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Structural Changes ◽  
Dislocation Slip ◽  
Free Standing ◽  
Transmission Electron ◽  
Enhanced Properties ◽  
Gold Thin Films ◽  
Annealing Experiments

AbstractRetention of the enhanced properties reported for nanograined metallic systems requires that the nanostructure be insensitive to temperature and deformation. In situ transmission electron microscopy annealing experiments were employed to investigate the structural changes associated with the formation of micron-sized grains in nanograined evaporated gold thin films. This abnormal grain growth occurs randomly throughout the film. Twinning but not dislocation slip occurs in the growing grains until the grain size is in the hundreds of nanometer range. The twins appear to hinder growth and for grain growth to continue the twins must either be annihilated or be able to grow with the grain concurrently.

In-Situ Tem Study of Copper-Tin Intermetallic Formation

1993 ◽  
Vol 323 ◽  
Author(s):  
Yujing Wu ◽  
Elizabeth G. Jacobs ◽  
Cyrus Pouraghabagher ◽  
Russell F. Pinizzotto
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Diffusion Barrier ◽  
Solder Joints ◽  
Effective Diffusion ◽  
Copper Substrate ◽  
In Situ Tem ◽  
Intermetallic Formation ◽  
Intermetallic Growth

AbstractThe formation and growth of Cu6Sn5 and Cu3Sn at the interface of Sn-Pb solder/copper substrate are factors which affect the solderability and reliability of electronic solder joints. The addition of particles such as Ni to eutectic Sn-Pb solder drastically affects the activation energies of formation for both intermetallics. This study was performed to understand the mechanisms of intermetallic formation and the effects of Ni on intermetallic growth. Cu/Sn and Cu/Sn/Ni thin films were deposited by evaporation and observed in the TEM in real time using a hot stage. The diffusion of Sn through Cu6Sn5 and Cu3Sn followed by reaction with Cu must occur for intermetallic formation and growth to take place. Ni is an effective diffusion barrier which prevents Sn from diffusing into Cu.

In-Situ TEM Study of Plastic Stress Relaxation Mechanisms and Interface Effects in Metallic Films

2005 ◽  
Vol 875 ◽  
Author(s):  
Marc Legros ◽  
Gerhard Dehm ◽  
T. John Balk
Keyword(s):  
Thin Films ◽  
High Strength ◽  
Dislocation Motion ◽  
Dislocation Nucleation ◽  
Film Stress ◽  
In Situ Tem ◽  
Metallic Films ◽  
Cross Sectional ◽  
Thin Foils

AbstractTo investigate the origin of the high strength of thin films, in-situ cross-sectional TEM deformation experiments have been performed on several metallic films attached to rigid substrates. Thermal cycles, comparable to those performed using laser reflectometry, were applied to thin foils inside the TEM and dislocation motion was recorded dynamically on video. These observations can be directly compared to the current models of dislocation hardening in thin films. As expected, the role of interfaces is crucial, but, depending on their nature, they can attract or repel dislocations. When the film/interface holds off dislocations, experimental values of film stress match those predicted by the Nix-Freund model. In contrast, the attracting case leads to higher stresses that are not explained by this model. Two possible hardening scenarios are explored here. The first one assumes that the dislocation/interface attraction reduces dislocation mobility and thus increases the yield stress of the film. The second one focuses on the lack of dislocation nucleation processes in the case of attracting interfaces, even though a few sources have been observed in-situ.

scholarly journals In Situ TEM Study of Fatigue Crack Growth of Cu Thin Films Using a Modified Nanoindentation System

2016 ◽  
pp. 199-200
Author(s):  
Daniel Bufford ◽  
Douglas Stauffer ◽  
William Mook ◽  
S.A. Syed Asif ◽  
Brad Boyce ◽  
...  
Keyword(s):  
Thin Films ◽  
Fatigue Crack ◽  
Fatigue Crack Growth ◽  
Crack Growth ◽  
In Situ Tem
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