Laser lift-off transfer printing of patterned GaN light-emitting diodes from sapphire to flexible substrates using a Cr/Au laser blocking layer

2014 ◽  
Vol 77 ◽  
pp. 13-16 ◽  
Author(s):  
Jaeyi Chun ◽  
Youngkyu Hwang ◽  
Yong-Seok Choi ◽  
Jae-Joon Kim ◽  
Tak Jeong ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Flexible Substrates ◽  
Blocking Layer ◽  
Transfer Printing ◽  
Light Emitting ◽  
Lift Off

scholarly journals Nanoscale-accuracy transfer printing of ultra-thin AlInGaN light-emitting diodes onto mechanically flexible substrates

2013 ◽  
Vol 103 (25) ◽  
pp. 253302 ◽  
Author(s):  
A. J. Trindade ◽  
B. Guilhabert ◽  
D. Massoubre ◽  
D. Zhu ◽  
N. Laurand ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Flexible Substrates ◽  
Transfer Printing ◽  
Light Emitting

Natural substrate lift-off technique for vertical light-emitting diodes

2014 ◽  
Vol 7 (4) ◽  
pp. 042103 ◽  
Author(s):  
Chia-Yu Lee ◽  
Yu-Pin Lan ◽  
Po-Min Tu ◽  
Shih-Chieh Hsu ◽  
Chien-Chung Lin ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Natural Substrate ◽  
Light Emitting ◽  
Lift Off

scholarly journals High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1178 ◽  
Author(s):  
Qiang Zhao ◽  
Jiahao Miao ◽  
Shengjun Zhou ◽  
Chengqun Gui ◽  
Bin Tang ◽  
...  
Keyword(s):  
High Power ◽  
Silicon Substrate ◽  
Flip Chip ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Current Spreading ◽  
Light Emitting ◽  
Fabry Perot ◽  
Lift Off

We demonstrate high-power GaN-based vertical light-emitting diodes (LEDs) (VLEDs) on a 4-inch silicon substrate and flip-chip LEDs on a sapphire substrate. The GaN-based VLEDs were transferred onto the silicon substrate by using the Au–In eutectic bonding technique in combination with the laser lift-off (LLO) process. The silicon substrate with high thermal conductivity can provide a satisfactory path for heat dissipation of VLEDs. The nitrogen polar n-GaN surface was textured by KOH solution, which not only improved light extract efficiency (LEE) but also broke down Fabry–Pérot interference in VLEDs. As a result, a near Lambertian emission pattern was obtained in a VLED. To improve current spreading, the ring-shaped n-electrode was uniformly distributed over the entire VLED. Our combined numerical and experimental results revealed that the VLED exhibited superior heat dissipation and current spreading performance over a flip-chip LED (FCLED). As a result, under 350 mA injection current, the forward voltage of the VLED was 0.36 V lower than that of the FCLED, while the light output power (LOP) of the VLED was 3.7% higher than that of the FCLED. The LOP of the FCLED saturated at 1280 mA, but the light output saturation did not appear in the VLED.

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