Realization of multi-paired photonic crystals by the multiple-exposure nanosphere lithography process

2012 ◽  
Vol 66 (5) ◽  
pp. 311-314 ◽  
Author(s):  
Jong-Bin Yeo ◽  
Hyun-Yong Lee
Keyword(s):  
Photonic Crystals ◽  
Nanosphere Lithography ◽  
Multiple Exposure ◽  
Lithography Process

FABRICATION OF TWO-DIMENSIONAL PHOTONIC CRYSTALS WITH GE2SB2TE5 NANOHOLE ARRAYS BY NANOSPHERE LITHOGRAPHY

2009 ◽  
Vol 23 (06n07) ◽  
pp. 1300-1305
Author(s):  
KI-HO SONG ◽  
HYUN-YONG LEE ◽  
HOE-YOUNG YANG ◽  
SUNG-WON KIM ◽  
JAE-HEE SEO ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Plasma Treatment ◽  
Treatment Time ◽  
Reduction Rate ◽  
Nanosphere Lithography ◽  
Two Dimensional ◽  
Photonic Bandgaps ◽  
Nanohole Arrays ◽  
Plasma Treatment Time ◽  
Lift Off

Two-dimensional photonic crystals (2D-PCs) with Ge 2 Sb 2 Te 5 ( GST ) nanohole arrays were prepared by the nanosphere lithography (NSL) process. A primary factor of PCs is that the refractive index (n) and the n-modulation can be realized by using the GST films, which exhibit a reversible phase transformation between amorphous and crystalline states by laser illumination. The polystyrene (PS) spheres with a diameter of 500 nm were spin-coated on Si substrate and subsequently reduced by O 2-plasma treatment. The reduced spheres were utilized as a lift-off mask of the NSL process and their size and separation could be precisely controlled. Amorphous GST films were thermally evaporated and then the reduced PS spheres were removed. The fabricated GST nanohole arrays were observed by SEM and AFM. The nanohole diameters are nearly linearly reduced with increasing plasma-treatment time (t). The reduction rate (δ) for the conditions of this work was evaluated to be ~ 0.92 nm/s. The period (Λ) and filling factor (η) of PCs are structure parameters that determine their photonic bandgaps (PBGs). η-modulation can be easily achieved via a control of t and the Λ can be also modulated by the use of PS spheres with specific diameter. In addition, the PBGs for the fabricated GST 2 D PC were calculated by considering the amorphous and crystalline states of GST .

Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

2014 ◽  
Vol 105 (1) ◽  
pp. 013108 ◽  
Author(s):  
Yonghui Zhang ◽  
Tongbo Wei ◽  
Zhuo Xiong ◽  
Liang Shang ◽  
Yingdong Tian ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Light Emitting Diode ◽  
Optical Power ◽  
Multiple Exposure ◽  
Light Emitting

scholarly journals Enhanced Output Power of Light-Emitting Diodes With Embedded Air-Gap Photonic Crystals by Nanosphere Lithography

2017 ◽  
Vol 9 (5) ◽  
pp. 1-7 ◽  
Author(s):  
Chengxiao Du ◽  
Wanrong Zhang ◽  
Tongbo Wei ◽  
Xiaoli Ji ◽  
Jinmin Li ◽  
...  
Keyword(s):  
Photonic Crystals ◽  
Output Power ◽  
Light Emitting Diodes ◽  
Nanosphere Lithography ◽  
Air Gap ◽  
Light Emitting

Photoactivated Metal-Oxide Gas Sensing Nanomesh by Using Nanosphere Lithography

2014 ◽  
Vol 1675 ◽  
pp. 139-144
Author(s):  
Yu-Hsuan Ho ◽  
Tsu-Hung Lin ◽  
Yi-Wen Chen ◽  
Wei-Cheng Tian ◽  
Pei-Kuen Wei ◽  
...  
Keyword(s):  
Room Temperature ◽  
Gas Sensing ◽  
Volume Ratio ◽  
Nanosphere Lithography ◽  
Light Activation ◽  
Light Path ◽  
Oxygen Ions ◽  
Lithography Process ◽  
Uv Illumination ◽  
Butanol Concentration

ABSTRACTA photoactivated ZnO nanomesh with precisely controlled dimensions and geometries is fabricated by using nanosphere lithography process. The nanomesh structures effectively increase the surface-to-volume ratio to improve the sensing response under the same testing gas. And the periodical nanostructures also increase the effective light path and lead to more efficient light activation for gas sensing. With the increase of the photoinduced oxygen ions by UV illumination, a distinguished sensing response is observed at room temperature. In the optimized case, the sensing response (△R/R0) of the ZnO nanomesh at the butanol concentration of 500 ppm is 97.5%, which is 4.54 times higher than the unpatterned one.

Self-assembling nanosphere lithography process for gated carbon nanotube field emission arrays

2010 ◽  
Author(s):  
Benjamin L. Crossley ◽  
Ronald A. Coutu, Jr. ◽  
LaVern A. Starman ◽  
Peter J. Collins
Keyword(s):  
Carbon Nanotube ◽  
Field Emission ◽  
Nanosphere Lithography ◽  
Lithography Process ◽  
Self Assembling ◽  
Field Emission Arrays

scholarly journals Wafer Surface Charge Reversal as a Method of Simplifying Nanosphere Lithography for Reactive Ion Etch Texturing of Solar Cells

2007 ◽  
Vol 2007 ◽  
pp. 1-4 ◽  
Author(s):  
Daniel Inns ◽  
Patrick Campbell ◽  
Kylie Catchpole
Keyword(s):  
Solar Cells ◽  
Surface Charge ◽  
Reactive Ion Etching ◽  
Nanosphere Lithography ◽  
Batch Process ◽  
Aluminum Nitrate ◽  
Wafer Surface ◽  
Charge Reversal ◽  
Ion Etching ◽  
Lithography Process

A simplified nanosphere lithography process has been developed which allows fast and low-waste maskings of Si surfaces for subsequent reactive ion etching (RIE) texturing. Initially, a positive surface charge is applied to a wafer surface by dipping in a solution of aluminum nitrate. Dipping the positive-coated wafer into a solution of negatively charged silica beads (nanospheres) results in the spheres becoming electrostatically attracted to the wafer surface. These nanospheres form an etch mask for RIE. After RIE texturing, the reflection of the surface is reduced as effectively as any other nanosphere lithography method, while this batch process used for masking is much faster, making it more industrially relevant.

Versatile nanosphere lithography technique combining multiple-exposure nanosphere lens lithography and nanosphere template lithography

2017 ◽  
Vol 15 (6) ◽  
pp. 062201-62205 ◽  
Author(s):  
Yonghui Zhang Yonghui Zhang ◽  
Zihui Zhang Zihui Zhang ◽  
Chong Geng Chong Geng ◽  
Shu Xu Shu Xu ◽  
Tongbo Wei Tongbo Wei ◽  
...  
Keyword(s):  
Nanosphere Lithography ◽  
Multiple Exposure ◽  
Lithography Technique
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