Plane-strain bulge test for nanocrystalline copper thin films

2007 ◽  
Vol 57 (6) ◽  
pp. 541-544 ◽  
Author(s):  
Xiaoding Wei ◽  
Dongyun Lee ◽  
Sanghoon Shim ◽  
Xi Chen ◽  
Jeffrey W. Kysar
Keyword(s):  
Thin Films ◽  
Plane Strain ◽  
Bulge Test ◽  
Nanocrystalline Copper

Mechanical properties of porous and fully dense low-κ dielectric thin films measured by means of nanoindentation and the plane-strain bulge test technique

2006 ◽  
Vol 21 (2) ◽  
pp. 386-395 ◽  
Author(s):  
Y. Xiang ◽  
X. Chen ◽  
T.Y. Tsui ◽  
J-I. Jang ◽  
J.J. Vlassak
Keyword(s):  
Thin Films ◽  
Comparative Study ◽  
Plane Strain ◽  
Mechanical Response ◽  
Numerical Models ◽  
Contact Stiffness ◽  
Bulge Test ◽  
Substrate Effect ◽  
Test Technique ◽  
Dielectric Thin Films

We report on the results of a comparative study in which the mechanical response of both fully dense and porous low-κ dielectric thin films was evaluated using two different techniques: nanoindentation and the plane-strain bulge test. Stiffness values measured by nanoindentation are systematically higher than those obtained using the bulge test technique. The difference between the measurements is caused by the Si substrate, which adds significantly to the contact stiffness in the indentation measurements. Depending on the properties of the coatings, the effect can be as large as 20%, even if the indentation depth is less than 5% of the film thickness. After correction of the nanoindentation results for the substrate effect using existing models, good agreement is achieved between both techniques. The results further show that densification of porous material under the indenter does not affect stiffness measurements significantly. By contrast, nanoindentation hardness values of porous thin films are affected by both substrate and densification effects. It is possible to eliminate the effect of densification and to extract the yield stress of the film using a model for the indentation of porous materials proposed by the authors. After correcting for substrate and densification effects, the nanoindentation results are in close agreement with the bulge test measurements. The results of this comparative study validate the numerical models proposed by Chen and Vlassak for the substrate effect and by Chen et al. for the densification effect.

Plane-strain Bulge Test for Thin Films

2005 ◽  
Vol 20 (9) ◽  
pp. 2360-2370 ◽  
Author(s):  
Y. Xiang ◽  
X. Chen ◽  
J.J. Vlassak
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Finite Element ◽  
Plane Strain ◽  
Strain Curve ◽  
Bulge Test ◽  
Stress And Strain ◽  
Stress Strain Curve ◽  
Stress Strain ◽  
Cu Film

The plane-strain bulge test is a powerful new technique for measuring the mechanical properties of thin films. In this technique, the stress–strain curve of a thin film is determined from the pressure-deflection behavior of a long rectangular membrane made of the film of interest. For a thin membrane in a state of plane strain, film stress and stain are distributed uniformly across the membrane width, and simple analytical formulae for stress and strain can be established. This makes the plane-strain bulge test ideal for studying the mechanical behavior of thin films in both the elastic and plastic regimes. Finite element analysis confirms that the plane-strain condition holds for rectangular membranes with aspect ratios greater than 4 and that the simple formulae are highly accurate for materials with strain-hardening exponents ranging from 0 to 0.5. The residual stress in the film mainly affects the elastic deflection of the membrane and changes the initial point of yield in the plane-strain stress–strain curve, but has little or no effect on further plastic deformation. The effect of the residual stress can be eliminated by converting the plane-strain curve into the equivalent uniaxial stress–strain relationship using effective stress and strain. As an example, the technique was applied to an electroplated Cu film. Si micromachining was used to fabricate freestanding Cu membranes. Typical experimental results for the Cu film are presented. The data analysis is in good agreement with finite element calculations.

Methods to improve reliability of bulge test technique to extract mechanical properties of thin films

2010 ◽  
Vol 50 (9-11) ◽  
pp. 1888-1893 ◽  
Author(s):  
H. Youssef ◽  
A. Ferrand ◽  
P. Calmon ◽  
P. Pons ◽  
R. Plana
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Bulge Test ◽  
Test Technique ◽  
Improve Reliability

B23-O-01Peculiar Domains by Local Out-of- Plane Strain in Chemically Modified Bismuth Ferrite Thin Films

Microscopy ◽  
2015 ◽  
Vol 64 (suppl 1) ◽  
pp. i53.1-i53
Author(s):  
Si-Young Choi ◽  
Sung-Dae Kim ◽  
Jungho Ryu
Keyword(s):  
Thin Films ◽  
Plane Strain ◽  
Bismuth Ferrite ◽  
Chemically Modified ◽  
Out Of Plane ◽  
Ferrite Thin Films

Fracture Properties of Silicon Carbide Thin Films by Bulge Test of Long Rectangular Membrane

2009 ◽  
Author(s):  
Wei Zhou ◽  
Jinling Yang ◽  
Guosheng Sun ◽  
Xingfang Liu ◽  
Fuhua Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Bulge Test ◽  
Fracture Properties
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