scholarly journals Indentation of thin copper film using molecular dynamics and peridynamics

2016 ◽  
Vol 2 ◽  
pp. 1343-1350 ◽  
Author(s):  
Aylin Ahadi ◽  
Per Hansson ◽  
Solveig Melin
Keyword(s):  
Molecular Dynamics ◽  
Copper Film ◽  
Thin Copper Film

Transferred-Substrate InGaAsP-Based Thermionic Emission Coolers

2000 ◽  
Author(s):  
Christopher J. LaBounty ◽  
Gerry Robinson ◽  
Patrick Abraham ◽  
Ali Shakouri ◽  
John E. Bowers
Keyword(s):  
Thermal Resistance ◽  
Three Dimensional ◽  
Thermionic Emission ◽  
Copper Film ◽  
Cooling Power ◽  
Material System ◽  
Inp Substrate ◽  
Order Of Magnitude ◽  
Thin Copper Film ◽  
Thermally Conducting

Abstract Most optoelectronic devices are based on III-V semiconductors such as the InP/InGaAsP material system. Solid state refrigerators based on the same material system can be monolithically integrated with optoelectronics. Thermionic emission cooling in InGaAsP-based heterostructures has been shown experimentally to provide cooling power densities of several 100 W/cm2. Cooling by several degrees across thin films on the order of a micron thick has been demonstrated. Thermionic emission of hot electrons over heterobarriers allows for enhanced cooling power beyond what is possible from the bulk thermoelectric properties. The thermal resistance of the InP substrate between the hot side of the thin film cooler and the heat sink is found to be a limitation in cooler performance. Several possibilities are examined for replacing the InP substrate with a higher thermally conducting one such as silicon, copper, or even diamond, and a process for substrate transfer to a thin copper film has been developed. Three-dimensional simulations predict an order of magnitude improvement in the thermal resistance of the substrate. Experimental results of packaged InGaAsP coolers with copper substrates will be discussed.

scholarly journals Feasibility of Novel Rear-Side Mirage Deflection Method for Thermal Conductivity Measurements

Sensors ◽  
2021 ◽  
Vol 21 (17) ◽  
pp. 5971
Author(s):  
Gwantaek Kim ◽  
Moojoong Kim ◽  
Hyunjung Kim
Keyword(s):  
Thermal Conductivity ◽  
Copper Film ◽  
Conductivity Measurement ◽  
Measurement Methods ◽  
Thermal Conductivity Measurement ◽  
Photothermal Effect ◽  
Rear Side ◽  
Copper Aluminum ◽  
Relative Errors ◽  
Thin Copper Film

Among the noncontact measurement technologies used to acquire thermal property information, those that use the photothermal effect are attracting attention. However, it is difficult to perform measurements for new materials with different optical and thermal properties, owing to limitations of existing thermal conductivity measurement methods using the photothermal effect. To address this problem, this study aimed to develop a rear-side mirage deflection method capable of measuring thermal conductivity regardless of the material characteristics based on the photothermal effect. A thin copper film (of 20 µm thickness) was formed on the surfaces of the target materials so that measurements could not be affected by the characteristics of the target materials. In addition, phase delay signals were acquired from the rear sides of the target materials to exclude the influence of the pump beam, which is a problem in existing thermal conductivity measurement methods that use the photothermal effect. To verify the feasibility of the proposed measurement technique, thermal conductivity was measured for copper, aluminum, and stainless steel samples with a 250 µm thickness. The results were compared with literature values and showed good agreement with relative errors equal to or less than 0.2%.

scholarly journals Effect of substrate temperature on quality of copper film catalyst substrate: A Molecular Dynamics Study

2017 ◽  
Vol 2 (2) ◽  
pp. 183 ◽  
Author(s):  
Rinaldo Marimpul
Keyword(s):  
Molecular Dynamics ◽  
Substrate Temperature ◽  
Film Growth ◽  
Copper Film ◽  
Deposition Process ◽  
Embedded Atom Method ◽  
Embedded Atom ◽  
Dynamics Simulations ◽  
Embedded Atom Method Potential

Copper film growth using thermal evaporation methods was studied using molecular dynamics simulations. The AlSiMgCuFe modified embedded atom method potential was used to describe interaction of Cu-Cu, Si-Si and Cu-Si atoms. Our results showed that the variations of substrate temperature affected crystal structure composition and surface roughness of the produced copper film catalyst substrate. In this study, we observed intermixing phenomenon after deposition process. The increasing of substrate temperature affected the increasing of the total silicon atoms had diffusion into copper film.

Fabrication of Variable Capacitor by Thin Copper Film with Electroplating

2003 ◽  
Vol 17 (08n09) ◽  
pp. 2001-2004 ◽  
Author(s):  
Chang Taeg Seo ◽  
Jae Ho Lee ◽  
Jong Hyun Lee ◽  
Young Ho Bae
Keyword(s):  
Tuning Range ◽  
Actuation Voltage ◽  
Copper Film ◽  
Error Rates ◽  
Micro Electro Mechanical Systems ◽  
Variable Capacitor ◽  
Tunable Capacitors ◽  
Copper Electroplating ◽  
Thin Copper Film ◽  
Electroplated Copper

The tunable capacitors have been fabricated by copper electroplating and MEMS(Micro-Electro-Mechanical Systems) technology. The thickness of electroplated copper which is used for moving electrode for variable capacitor below 0.5μm for lower actuation voltage. The fabricated tunable capacitors have been tested from 0V~42V and the resulting tuning range was between 62.3% and 90.2%. Also, the error rates have been presented ± 2.7% below.

The No-Cyanide Copper Electroplating with Dipping-Plating Pretreatment

2011 ◽  
Vol 239-242 ◽  
pp. 3186-3189
Author(s):  
Xue Jiao Tang ◽  
Ai Hong Guo ◽  
Jin Gang Wang ◽  
Min Gao ◽  
Bo Xiong Shen
Keyword(s):  
Electric Current ◽  
Current Density ◽  
Copper Film ◽  
Copper Plating ◽  
Plating Bath ◽  
Copper Electroplating ◽  
Effects Of Temperature ◽  
Thin Copper Film ◽  
Electronic Potential

The acid dipping-plating pretreatment was applied on iron substrate prior to no-cyanide copper plating process. After being pretreated in dipping solution, the thin copper film formed on iron substrate which could change the cathode electronic potential and enhance the copper plating rate in the follow-up copper electroplating. As a comparation, the iron substrate was directly electroplated in another copper plating bath without dipping-plating pretreatment (DPr). The effects of temperature and electric current density on the copper plating rate were investigated in both process with DPr and process without DPr. And the mechanism was discussed.

scholarly journals Study of an Attenuator Supporting Meander-Line Slow Wave Structure for Ka-Band TWT

Electronics ◽  
2021 ◽  
Vol 10 (19) ◽  
pp. 2372
Author(s):  
Hexin Wang ◽  
Shaomeng Wang ◽  
Zhanliang Wang ◽  
Xinyi Li ◽  
Tenglong He ◽  
...  
Keyword(s):  
Slow Wave ◽  
Maximum Output Power ◽  
Copper Film ◽  
Wave Structure ◽  
Slow Wave Structure ◽  
Maximum Output ◽  
Ka Band ◽  
Thin Copper Film ◽  
Electronic Efficiency ◽  
Meander Line

An attenuator supporting meander-line (ASML) slow wave structure (SWS) is proposed for a Ka-band traveling wave tube (TWT) and studied by simulations and experiments. The ASML SWS simplifies the fabrication and assembly process of traditional planar metal meander-lines (MLs) structures, by employing an attenuator to support the ML on the bottom of the enclosure rather than welding them together on the sides. To reduce the surface roughness of the molybdenum ML caused by laser cutting, the ML is coated by a thin copper film by magnetron sputtering. The measured S11 of the ML is below −20 dB and S21 varies around −8 dB to −12 dB without the attenuator, while below −40 dB with the attenuator. Particle-in-cell (PIC) simulation results show that with a 4.4-kV, 200-mA sheet electron beam, a maximum output power of 126 W is obtained at 38 GHz, corresponding to a gain of 24.1 dB and an electronic efficiency of 14.3%, respectively.

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