scholarly journals A New Low Leakage Power Flip-Flop Based on Ratioed Latches with Power Gating

2011 ◽  
Vol 11 ◽  
pp. 297-303 ◽  
Author(s):  
Xiaoying Yu ◽  
Jianping Hu
Keyword(s):  
Leakage Power ◽  
Power Gating ◽  
Flip Flop ◽  
Low Leakage

scholarly journals A Low Leakage Autonomous Data Retention Flip-Flop with Power Gating Technique

2014 ◽  
Vol 2014 ◽  
pp. 1-10 ◽  
Author(s):  
Xiaohui Fan ◽  
Yangbo Wu ◽  
Hengfeng Dong ◽  
Jianping Hu
Keyword(s):  
Vlsi Design ◽  
Leakage Power ◽  
Total Power ◽  
Sleep Mode ◽  
Power Gating ◽  
Data Retention ◽  
Flip Flop ◽  
Low Leakage ◽  
Area Overhead ◽  
Technology Process

With the scaling of technology process, leakage power becomes an increasing portion of total power. Power gating technology is an effective method to suppress the leakage power in VLSI design. When the power gating technique is applied in sequential circuits, such as flip-flops and latches, the data retention is necessary to store the circuit states. A low leakage autonomous data retention flip-flop (ADR-FF) is proposed in this paper. Two high-Vthtransistors are utilized to reduce the leakage power consumption in the sleep mode. The data retention cell is composed of a pair of always powered cross-coupled inverters in the slave latch. No extra control signals and complex operations are needed for controlling the data retention and restoration. The data retention flip-flops are simulated with NCSU 45 nm technology. The postlayout simulation results show that the leakage power of the ADR-FF reduces 51.39% compared with the Mutoh-FF. The active power of the ADR-FF is almost equal to other data retention flip-flops. The average state mode transition time of ADR-FF decreases 55.98%, 51.35%, and 21.07% as compared with Mutoh-FF, Balloon-FF, and Memory-TG-FF, respectively. Furthermore, the area overhead of ADR-FF is smaller than other data retention flip-flops.

Various Logically Optimized D Flip Flop Circuits-A Comparative Study in Submicron Technology

2015 ◽  
Vol 4 (2) ◽  
Author(s):  
Abhijit Asthana ◽  
Shyam Akashe
Keyword(s):  
Comparative Study ◽  
Power Dissipation ◽  
Leakage Power ◽  
Simulation Test ◽  
Flip Flop ◽  
Chip Area ◽  
Low Leakage ◽  
Signal Systems ◽  
To Come ◽  
Power Delay Product

D-Flip Flop (D_FF) is a very important component of various digital, analog and mixed signal systems and designs. It is obvious to come up with optimized D_FF, that cater the needs of low leakage power, less power dissipation, less chip area on the chip and low delays. This paper presents a comparative study of various logically optimized circuits of D_FF using 8T, 11T, 12T and conventional 18T D_FF. The simulation, test circuits, schematics & layouts etc are done on Cadence Virtuoso tool in 180 nm technology. Designs are compared on grounds of power dissipation, leakage power, delays and power delay product.

scholarly journals Leakage Power Minimization Using Gating Technique In FPGA Controlled Device

2013 ◽  
Vol 2 (04) ◽  
pp. 07-12
Author(s):  
Mr. Sagar Kothawade
Keyword(s):  
Power Consumption ◽  
Power Analysis ◽  
Research Work ◽  
Leakage Power ◽  
Total Power ◽  
Power Gating ◽  
Low Leakage ◽  
Look Up Table ◽  
Area Overhead ◽  
Total Power Consumption

FPGA based controlled devices are widely used in integrated chip sector provided the power consumed by such devices should be low. Leakage power takes vital part in contributing towards the total power consumption. This research work concentrates in proposing a power gating technique based on look up table approach. The novelty of this approach is that common look up tables are employed for asynchronous architectures for each leaf node. Due to this the leakage power and the total area overhead can be minimized. The proposed architecture is simulated through M-Power analysis and simulator tool for leaf nodes and efficiently utilizes H-tree methodology to minimize area. The reduction in number of look up tables leads to 45% to 50% reduction in leakage power of FPGA device.

Low Leakage Optimization Techniques for Multi-threshold CMOS Circuits

2020 ◽  
Vol 10 (5) ◽  
pp. 696-708
Author(s):  
Rumi Rastogi ◽  
Sujata Pandey ◽  
Mridula Gupta
Keyword(s):  
Integrated Circuits ◽  
Low Power ◽  
High Speed ◽  
Room Temperature ◽  
Leakage Power ◽  
Optimization Techniques ◽  
Power Gating ◽  
Low Leakage ◽  
Charge Recycling ◽  
A New Technique

Background: With the reducing size of the devices, the leakage power has also increased exponentially in the nano-scale CMOS devices. Several techniques have been devised so far to minimize the leakage power, among which, MTCMOS (power-gating) is the preferred one as it effectively minimizes the leakage power without any complexity in the circuit. However, the power-gating technique suffers from problems like transition noise and delay. In this paper, we proposed a new simple yet effective technique to minimize leakage power in MTCMOS circuits. Objective: The objective of the paper was to propose a new technique which effectively minimizes leakage power in nanoscale power-gated circuits with minimal delay, noise and area requirement so that it can well be implemented in high-speed low-power digital integrated circuits. Methods: A new power-gating structure has been proposed in this paper. The new proposed technique includes three parallel NMOS transistors with variable widths which are functional during the active mode to reduce the on-time delay. A PMOS footer with gate-bias is also connected in parallel with the NMOS footer transistors. The proposed technique has been verified through simulation in 45nm MTCMOS technology to implement a 32 bit adder circuit. Results: The proposed technique offers significant reduction in leakage power, reactivation noise and reactivation energy. The technique reduced the leakage power effectively at room temperature as well as higher temperatures. The reactivation noise produced by the proposed technique minimized by 98.7%, 64.8%, 62.07% and 24.47% as compared to the parallel transistor, variable-width, charge-recycling and the modified-charge recycling techniques respectively at room temperature.The reactivation energy of the proposed technique also minimized by 77.by 77.67%, 55.8%, 45.1%, and 18.32% with respect to the parallel transistor, variable-width, CR and Modified-CR techniques, respectively. Conclusion: The proposed technique offers significant reduction in leakage power, reactivation noise and reactivation energy. The technique reduces the leakage power effectively at room temperature as well as at higher temperatures. Since the delay and area overhead of the proposed structure is minimal, hence it can be easily implemented in high-speed low-power digital circuits.

Low power aware pulse triggered flip flops using modified clock gating approaches

2018 ◽  
Vol 15 (6) ◽  
pp. 792-803
Author(s):  
Sudhakar Jyothula
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Average Power ◽  
Essential Element ◽  
Battery Life ◽  
Portable Devices ◽  
Clock Gating ◽  
Flip Flop ◽  
Content Type ◽  
Low Leakage

PurposeThe purpose of this paper is to design a low power clock gating technique using Galeor approach by assimilated with replica path pulse triggered flip flop (RP-PTFF).Design/methodology/approachIn the present scenario, the inclination of battery for portable devices has been increasing tremendously. Therefore, battery life has become an essential element for portable devices. To increase the battery life of portable devices such as communication devices, these have to be made with low power requirements. Hence, power consumption is one of the main issues in CMOS design. To reap a low-power battery with optimum delay constraints, a new methodology is proposed by using the advantages of a low leakage GALEOR approach. By integrating the proposed GALEOR technique with conventional PTFFs, a reduction in power consumption is achieved.FindingsThe design was implemented in mentor graphics EDA tools with 130 nm technology, and the proposed technique is compared with existing conventional PTFFs in terms of power consumption. The average power consumed by the proposed technique (RP-PTFF clock gating with the GALEOR technique) is reduced to 47 per cent compared to conventional PTFF for 100 per cent switching activity.Originality/valueThe study demonstrates that RP-PTFF with clock gating using the GALEOR approach is a design that is superior to the conventional PTFFs.

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