scholarly journals Surface Characterization, Material Removal Mechanism and Material Migration Study of Micro EDM Process on Conductive SiC

Procedia CIRP ◽  
2016 ◽  
Vol 42 ◽  
pp. 179-184 ◽  
Author(s):  
Krishna Kumar Saxena ◽  
Sanjay Agarwal ◽  
Sanchit Kumar Khare
Keyword(s):  
Material Removal ◽  
Surface Characterization ◽  
Micro Edm ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Migration Study ◽  
Material Migration ◽  
Edm Process

scholarly journals Material removal mechanism in low-energy micro-EDM process

CIRP Annals ◽  
2015 ◽  
Vol 64 (1) ◽  
pp. 225-228 ◽  
Author(s):  
Jun Qian ◽  
Fei Yang ◽  
Jun Wang ◽  
Bert Lauwers ◽  
Dominiek Reynaerts
Keyword(s):  
Material Removal ◽  
Low Energy ◽  
Micro Edm ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Edm Process

scholarly journals Study on Material Removal Mechanism in EDM Process through Observation of Resolidification of Molten Metal

Procedia CIRP ◽  
2018 ◽  
Vol 68 ◽  
pp. 266-271 ◽  
Author(s):  
Shinya Hayakawa ◽  
Kazuaki Minoura ◽  
Fumihiro Itoigawa ◽  
Takashi Nakamura
Keyword(s):  
Molten Metal ◽  
Material Removal ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Edm Process

Evaluation of Micro-EDM (μEDM) Characteristics of Conductive Silicon Carbide Using a Coupled Thermo-Structural Process Model

2018 ◽  
Vol 17 (03) ◽  
pp. 415-443 ◽  
Author(s):  
Krishna Kumar Saxena ◽  
Sanjay Agarwal ◽  
Raj Das
Keyword(s):  
Material Removal ◽  
Process Model ◽  
Structural Model ◽  
Transient Temperature ◽  
Micro Edm ◽  
Removal Mechanism ◽  
Transient Temperature Distribution ◽  
Cooling Phase ◽  
Transient Study ◽  
Edm Process

In this work, micro-EDM ([Formula: see text]EDM) characteristics of conductive SiC have been evaluated using the knowledge of existing coupled thermo-structural model. A simplified thermo-structural model of [Formula: see text]EDM process on conductive SiC has been used to simulate the [Formula: see text]EDM process on conductive SiC. So far, the studies have used traditional melting and evaporation removal mechanism during EDM simulation which is suitable for metals. In case of ceramics, material removal occurs by various phenomenon such as spalling, melting, evaporation and it depends on [Formula: see text]EDM energy and type of ceramic. Thus, we aim here to evaluate the characteristics of a SiC ceramic using the thermo-structural model. To make the model more realistic, Gaussian heat flux distribution has been used and transient study has been performed. The model uses process parameters (voltage, capacitance and time) and material properties as input to predict the transient temperature distribution, crater dimensions, volume of material removed and thermal residual stresses. To simulate the material removal, element death has been performed. The element death is purely based on attainment of certain temperature suitable for material removal irrespective of material removal mechanism. The transient thermal analysis was carried out in heating phase and the structural analysis was carried out in cooling phase. Observatory experiments were performed to add value to the model predictions.

scholarly journals Research on Material Removal Mechanism of Micro-EDM in Deionized Water

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 322
Author(s):  
Tingting Ni ◽  
Qingyu Liu ◽  
Yunzhong Wang ◽  
Zhiheng Chen ◽  
Dongsheng Jiang
Keyword(s):  
Material Removal ◽  
Open Circuit Voltage ◽  
Pulse Discharge ◽  
Reference Value ◽  
Open Circuit ◽  
Deionized Water ◽  
Micro Edm ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Crater Size

As one of the most promising processing methods, the microelectrical discharge machining (micro-EDM) process is widely used in industrial production; however, the material removal mechanism of micro-EDM in deionized water has not been clarified due to scale effect. In this paper, the influence of discharge parameters on the discharge crater size was studied by means of a single-pulse discharge experiment using a resistor–capacitor circuit (RC circuit). The variation trend of the discharge crater size with open-circuit voltage and capacitance was discussed based on the experimental results. The results show that the diameter and depth of the discharge crater increases with capacitance and open-circuit voltage due to the increasing discharge duration and the energy density of the discharge plasma. The discharge energy increases with the increase of capacitance and open-circuit voltage, which causes more materials to melt and vaporize, leading to the crater volume becoming larger. This study has reference value for the further application of micro-EDM adopting deionized water as a dielectric.

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

Fundamental study on material removal mechanism in single-crystal germanium

2021 ◽  
pp. 103773
Author(s):  
Ruiwen Geng ◽  
Xiaojing Yang ◽  
Qiming Xie ◽  
Jianguo Xiao ◽  
Wanqing Zhang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Fundamental Study

Microgrinding of Nanostructured Carbide Coatings: Ground Surface and Subsurface Damage Observations

2006 ◽  
Vol 304-305 ◽  
pp. 276-280 ◽  
Author(s):  
Y.H. Ren ◽  
Zhi Xiong Zhou ◽  
Zhao Hui Deng
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Material Removal ◽  
Ground Surface ◽  
Subsurface Damage ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Carbide Coatings ◽  
Subsurface Layers ◽  
Scanning Electron

Surface microgrinding of the nanostructured WC/12Co coatings have been undertaken with diamond wheels under various conditions. Nondestructive and destructive approaches were utilized to assess damage in ground nanostructured coatings. Different surface and subsurface configurations were observed by scanning electron microscopy. This paper investigates the effects of microgrinding conditions on damage formation in the surface and subsurface layers of the ground nanostructured WC/12Co coatings. And the material-removal mechanism has been discussed.

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