Near-field microscopy inspection of nano scratch defects on the monocrystalline silicon surface

2019 ◽  
Vol 56 ◽  
pp. 506-512 ◽  
Author(s):  
Ying Yan ◽  
Yonghao Wang ◽  
Ping Zhou ◽  
Ning Huang ◽  
Dongming Guo
Keyword(s):  
Silicon Surface ◽  
Near Field ◽  
Monocrystalline Silicon

Picosecond laser structuring of monocrystalline silicon surface

2013 ◽  
Author(s):  
Igor Guk ◽  
Galina Shandybina ◽  
Eugeny Yakovlev ◽  
Leonid Golovan
Keyword(s):  
Silicon Surface ◽  
Picosecond Laser ◽  
Monocrystalline Silicon ◽  
Laser Structuring

Nanoscratching-Induced Phase Tansformation of Monocrystalline Silicon – The Depth-of-Cut Effect

2009 ◽  
Vol 76-78 ◽  
pp. 387-391 ◽  
Author(s):  
Kausala Mylvaganam ◽  
Liang Chi Zhang
Keyword(s):  
Molecular Dynamics ◽  
Phase Transformations ◽  
Amorphous Silicon ◽  
Significant Influence ◽  
Crystalline Phase ◽  
Silicon Surface ◽  
Monocrystalline Silicon ◽  
Depth Of Cut ◽  
Initial Impression ◽  
Dynamics Simulations

This paper explores the effect of the depth-of-cut of an indenter on the phase transformations during nanoscratching on monocrystalline silicon on the Si(100) orientation. The analysis was carried out by molecular dynamics simulations. It was found that the depth-of-cut and the impingement direction of the indenter had a significant influence on the phase transformations in the initial impression region. At a relatively low depth-of-cut, only amorphous silicon was formed on the scratched surface. When the indenter impinged on a silicon surface with an angle, a bct5-Si crystalline phase in the initial impression region would emerge.

Anti-friction property of surface patterning nano-hard film on the monocrystalline silicon surface

2014 ◽  
Vol 66 (1) ◽  
pp. 131-142 ◽  
Author(s):  
Chen Wengang ◽  
Ge Shirong ◽  
Pang Lianyun ◽  
Zhang Yonghai
Keyword(s):  
Silicon Surface ◽  
Surface Patterning ◽  
Laser Surface ◽  
Monocrystalline Silicon ◽  
Friction Property ◽  
Surface Processing ◽  
Content Type ◽  
Dlc Film ◽  
Processing Equipment ◽  
Low Load

Purpose – Three types of pattern on the monocrystalline silicon surface were prepared by using laser surface processing equipment. The DLC film and Si-DLC film on the patterning surface were deposited by using PECVD-2D plasma chemical vapor deposition sets. The paper aims to discuss these issues. Design/methodology/approach – The tribological properties of the films were investigated by using the UMT-2 micro friction and wear tester. The surface topography, composition, hardness and elastic modular of the films were determined by Raman spectrum, nano mechanics tester and three-dimensional topography instrument. The worn surface topographies of the surface patterning films were tested by scanning electron microscopy. Findings – The results show that the patterning monocrystalline silicon substrate surface has good anti-friction property under low load. The patterning DLC film and Si-DLC film surface have very good anti-friction property under all the test loads. The reason of these results is that the surface patterning film not only reduces the real contact area of the friction pairs but also has low surface bonding force. Originality/value – This paper prepared three kinds of microscopic patterns on the monocrystalline silicon surface by using laser surface processing equipment. And then deposited DLC film and Si-DLC film on the patterning surface. All kinds of surface patterning monocrystalline silicon had very good anti-friction property under low load. And all kinds of surface patterning nano-hard film had perfect anti-friction property under all test loads.

Texture etching of monocrystalline silicon surface with sodium hypochlorite

2013 ◽  
Vol 30 (2) ◽  
pp. 148-151 ◽  
Author(s):  
A. Lounas ◽  
A. Nait Bouda ◽  
H. Menari ◽  
Y. Belkacem ◽  
N. Gabouze
Keyword(s):  
Sodium Hypochlorite ◽  
Silicon Surface ◽  
Monocrystalline Silicon

Efficient Light Harvesting with LB Films for Application in Crystalline Silicon Solar Cells

2008 ◽  
Vol 1120 ◽  
Author(s):  
Lefteris Danos ◽  
Tomas Markvart
Keyword(s):  
Energy Transfer ◽  
Fatty Acid ◽  
Fluorescence Lifetime ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Single Photon ◽  
Near Field ◽  
Cyanine Dye ◽  
Efficient Energy Transfer ◽  
Surface Time

AbstractWe have carried out fluorescence lifetime measurements using time correlated single photon counting (TCSPC) for a cyanine dye near the silicon surface. The measurements have been carried out for both (100) and (111) crystal orientations of the silicon surface, showing the dependence of energy transfer rate as a function of the separation between the dye monolayer and the silicon surface. Langmuir Blodgett fatty acid layers were used to create a multistep structure and a monolayer of a cyanine dye was deposited on top of the stepped structure. Spectroscopic ellipsometry has been used to measure the thickness of the fatty acid steps and provide an accurate estimate of the distance of the dye monolayer to the silicon surface. Time resolved emission spectra and fluorescence decay curves were measured with a single photon picosecond time correlated system. We find that the fluorescence lifetime of the dye monolayer is significantly shortened when present close to the silicon surface signifying efficient energy transfer. The dissipation of the excitation energy near silicon is explained using the classical theory developed for metals and a deviation is observed for distances close to the silicon surface (d<5nm). The model can be reconciled with the observed data by modifying the value of the silicon extinction coefficient which can provide an insight into the energy transfer process in the near field dye-silicon interaction.

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