Microscale patterning of single crystal diamond by thermochemical reaction between sidero-metal and diamond

2011 ◽  
Vol 35 (3) ◽  
pp. 490-495 ◽  
Author(s):  
Yuko Morofushi ◽  
Hajime Matsushita ◽  
Norihisa Miki
Keyword(s):  
Single Crystal ◽  
Single Crystal Diamond ◽  
Thermochemical Reaction

Microscale Patterning of Single Crystal Diamond Using Sidero-Metal/Diamond Thermochemical Reaction

2009 ◽  
Vol 1222 ◽  
Author(s):  
Yuko Morofushi ◽  
Hajime Matsushita ◽  
Norihisa Miki
Keyword(s):  
Single Crystal ◽  
Reduction Reaction ◽  
Carbide Formation ◽  
Metal Oxidation ◽  
Direct Patterning ◽  
Micro Patterning ◽  
Oxidation Reduction ◽  
Single Crystal Diamond ◽  
Oxidation Reduction Reaction ◽  
Thermochemical Reaction

AbstractIn this paper we propose and demonstrate micro patterning processes of single crystal diamond using thermochemical reaction of diamond with a sidero-metal and elucidate the reaction involved. Single crystal diamond processes a variety of excellent characteristics, such as hardness and wear resistance, and hence, is expected to be a new material for not only micro machining tools but also innovative micro devices. It is mandatory to develop a patterning process of diamond with high precision and at low cost. Laser processing is currently widely used, but it is a serial process and costly. Film deposition and plasma etching are other effective methods while they are time consuming. Thermochemical reaction between diamond and sidero-metals is well known in the field of mechanical machining. Diamond tools cannot machine sidero-metals, such as iron, nickel, and cobalt, when the diamond tools wear instead of the sidero-metals. We used this reaction to micro pattern single crystal diamond. We used nickel as the sidero-metal that was patterned either directly on a bulk of single crystal diamond or on a silicon substrate. We term the former and the latter processes as direct and indirect patterning processes, respectively. In the indirect patterning a bulk of single crystal diamond was placed on the substrate. The pattern was negatively transferred to the diamond after thermal treatment in the air at ˜1000K in both processes. The sidero-metal layer can be patterned by photolithography, which enables precise manufacturing and mass production. The direct and indirect patterning achieved etching rates of ˜0.5μm/min and ˜0.2μm/min, respectively, both of which increased as the annealing temperature increased while the indirect patterning did not require micro patterning of photoresist on a bulk diamond several millimeters squire and involved much less difficult processes than the direct patterning. The thermochemical reaction is reported to be caused by; diffusion of carbon from diamond into the sidero-metal, oxidation-reduction reaction between diamond and the metal, oxidation of diamond, and carbide formation. Carbide formation was not observed when we used nickel as the sidero-metal. When the direct and indirect patterning was conducted in nitrogen, the pattern transfer was observed but the etching rate was extremely low. Therefore, oxidation-reduction reaction is dominant in the direct patterning. In the indirect patterning, the etching continued even after the nickel and diamond was not in contact. The thickness of removed diamond was by far greater than the thickness of the nickel layer. Hence, we consider that diamond was etched by oxide-reduction reaction between the diamond and the metal while they were in contact at the beginning and then, the oxidation of diamond became dominant in the indirect patterning. The process proposed herein is readily applicable to manufacture micro devices that exploit excellent characteristics of single crystal diamond.

Dynamic Friction Polishing of Diamond Utilizing High Reactive Metallic Tools

2014 ◽  
Vol 1017 ◽  
pp. 160-165
Author(s):  
William Chen ◽  
Manabu Iwai ◽  
Kiyoshi Suzuki
Keyword(s):  
High Pressure ◽  
Stainless Steel ◽  
Single Crystal ◽  
High Efficiency ◽  
Dynamic Friction ◽  
Single Crystal Diamond ◽  
Steel Disc ◽  
Reactive Metals ◽  
Very High ◽  
Thermochemical Reaction

The authors developed “Dynamic Friction Polishing (DF polishing) Method” utilizing a thermochemical reaction between a diamond workpiece and a metal. This method enables high efficiency abrasive-free polishing of single crystal and polycrystalline diamonds (PCD) by simply pressing them against a stainless steel (SUS304) disc rotating at a high peripheral speed (VS>2500m/min). In the authors’ previous paper, a top of the diamond test piece (0.6mm×0.6mm, (100) plane) was removed at a rate of 2.6mm/min (0.94mm3/min) under the polishing condition of sliding speed VS=4000m/min, loading pressure P=130MPa and polishing time t=10s. A bottleneck for practical use of this method is a high pressure over 100MPa required for pressing a diamond workpiece against a rotating stainless steel disc. In this paper, a high efficiency tool was manufactured by electro-spark deposition of highly reactive special metals on a base disc tool. Among various reactive metals Nb and W brought very high efficiency in the polishing of a single crystal diamond.

scholarly journals Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

2021 ◽  
Vol 1 (1) ◽  
pp. 143-149
Author(s):  
Wei Cao ◽  
Deng Gao ◽  
Hongyang Zhao ◽  
Zhibin Ma
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Lateral Growth ◽  
Single Crystal Diamond

On The Optimized Nucleation of Near-Single-Crystal Cvd Diamond Film

1995 ◽  
Vol 416 ◽  
Author(s):  
L. C. Chen ◽  
C. C. Juan ◽  
J. Y. Wu ◽  
K. H. Chen ◽  
J. W. Teng
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Morphological Evolution ◽  
Present Report ◽  
Ex Situ ◽  
Nucleation Density ◽  
Induced Current ◽  
Current Time ◽  
Single Crystal Diamond

ABSTRACTNear-single-crystal diamond films have been obtained in a number of laboratories recently. The optimization of nucleation density by using a bias-enhanced nucleation (BEN) method is believed to be a critical step. However, the condition of optimized nucleation has never been clearly delineated. In the present report, a novel quantitative technique was established to monitor the nucleation of diamond in-situ. Specifically, the induced current was measured as a function of nucleation time during BEN. The timedependence of induced current was studied under various methane concentrations as well as substrate temperatures. The optimized nucleation condition can be unambiguously determined from the current-time plot. Besides the in-situ current probe, ex-situ x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were also used to investigate the chemical and morphological evolution. Characteristic XPS and AFM features of optimized nucleation is discussed.

Development of Diamond-Based X-ray Detection for High Flux Beamline Diagnostics

2009 ◽  
Vol 1203 ◽  
Author(s):  
Jen Bohon ◽  
John Smedley ◽  
Erik M. Muller ◽  
Jeffrey W. Keister
Keyword(s):  
Single Crystal ◽  
Linear Response ◽  
Voltage Dependence ◽  
Cvd Diamond ◽  
High Flux ◽  
National Synchrotron Light Source ◽  
X Ray ◽  
Single Crystal Diamond ◽  
Synchrotron Light ◽  
Pulse Structure

AbstractHigh quality single crystal and polycrystalline CVD diamond detectors with platinum contacts have been tested at the white beam X28C beamline at the National Synchrotron Light Source under high-flux conditions. The voltage dependence of these devices has been measured under DC and pulsed-bias conditions, establishing the presence or absence of photoconductive gain in each device. Linear response has been achieved over eleven orders of magnitude when combined with previous low flux studies. Temporal measurements with single crystal diamond detectors have resolved the ns scale pulse structure of the NSLS.

Thermal conductivity of isotopically modified single crystal diamond

1993 ◽  
Vol 70 (24) ◽  
pp. 3764-3767 ◽  
Author(s):  
Lanhua Wei ◽  
P. K. Kuo ◽  
R. L. Thomas ◽  
T. R. Anthony ◽  
W. F. Banholzer
Keyword(s):  
Thermal Conductivity ◽  
Single Crystal ◽  
Single Crystal Diamond

Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

1994 ◽  
Vol 354 ◽  
Author(s):  
Shuji Kiyohara ◽  
Iwao Miyamoto
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Incidence Angle ◽  
Ion Beam ◽  
Etching Rate ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Ion Beam Etching ◽  
Single Crystal Diamond ◽  
Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

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