scholarly journals Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

APL Materials ◽  
2014 ◽  
Vol 2 (5) ◽  
pp. 056101 ◽  
Author(s):  
Ya-Ju Lee ◽  
Zu-Po Yang ◽  
Fang-Yuh Lo ◽  
Jhih-Jhong Siao ◽  
Zhong-Han Xie ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Oblique Angle Deposition ◽  
Nanorod Arrays ◽  
Oblique Angle ◽  
Light Emitting ◽  
Angle Deposition

The SERS response of semiordered Ag nanorod arrays fabricated by template oblique angle deposition

2010 ◽  
Vol 41 (10) ◽  
pp. 1112-1118 ◽  
Author(s):  
Y.-J. Liu ◽  
Z.-Y. Zhang ◽  
R. A. Dluhy ◽  
Y.-P. Zhao
Keyword(s):  
Oblique Angle Deposition ◽  
Nanorod Arrays ◽  
Oblique Angle ◽  
Angle Deposition

scholarly journals Visible Light Photoelectrochemical Properties of N-Doped TiO2Nanorod Arrays from TiN

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Zheng Xie ◽  
Yongbin Zhang ◽  
Xiangxuan Liu ◽  
Weipeng Wang ◽  
Peng Zhan ◽  
...  
Keyword(s):  
Visible Light ◽  
Annealing Time ◽  
Dopant Concentration ◽  
Band Gaps ◽  
Photoelectrochemical Properties ◽  
Oblique Angle Deposition ◽  
Nanorod Arrays ◽  
Oblique Angle ◽  
The One ◽  
Angle Deposition

N-doped TiO2nanorod arrays (NRAs) were prepared by annealing the TiN nanorod arrays (NRAs) which were deposited by using oblique angle deposition (OAD) technique. The TiN NRAs were annealed at 330°C for different times (5, 15, 30, 60, and 120 min). The band gaps of annealed TiN NRAs (i.e., N-doped TiO2NRAs) show a significant variance with annealing time, and can be controlled readily by varying annealing time. All of the N-doped TiO2NRAs exhibit an enhancement in photocurrent intensity in visible light compared with that of pure TiO2and TiN, and the one annealed for 15 min shows the maximum photocurrent intensity owning to the optimal N dopant concentration. The results show that the N-doped TiO2NRAs, of which the band gap can be tuned easily, are a very promising material for application in photocatalysis.

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