scholarly journals Optical gain spectra of unstrained graded GaAs/AlxGa1−xAs quantum well laser

2013 ◽  
Vol 377 (7) ◽  
pp. 582-586 ◽  
Author(s):  
E.L. Albuquerque ◽  
U.L. Fulco ◽  
M.S. Vasconcelos ◽  
P.W. Mauriz
2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.


2008 ◽  
Vol 5 (6) ◽  
pp. 2126-2128 ◽  
Author(s):  
Kazunobu Kojima ◽  
Mitsuru Funato ◽  
Yoichi Kawakami ◽  
Harald Braun ◽  
Ulrich Schwarz ◽  
...  

2013 ◽  
Vol 746 ◽  
pp. 197-202 ◽  
Author(s):  
W.J. Fan

The band structure and optical gain of a novel n+ doping tensile-strained Ge/GeSiSn quantum well are investigated by using an 8-band k·p method. The doping effect in Ge quantum well and the effect of the carrier leakage into L valley on the optical gain will also be considered. The E-k dispersion curves and optical gain spectra will be obtained and discussed.


Author(s):  
E. L. Albuquerque ◽  
U. L. Fulco ◽  
M. S. Vasconcelos ◽  
P. W. Mauriz

1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.


2005 ◽  
Author(s):  
E. L. Albuquerque ◽  
E. C. Ferreira ◽  
J. A. P. da Costa

2017 ◽  
Vol 102 ◽  
pp. 141-146 ◽  
Author(s):  
I. Guizani ◽  
C. Bilel ◽  
M.M. Habchi ◽  
A. Rebey

1996 ◽  
Vol 98 (8) ◽  
pp. 737-740 ◽  
Author(s):  
W.J. Fan ◽  
M.F. Li ◽  
T.C. Chong ◽  
J.B. Xia

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