Optical gain of unstrained graded GaAs/Al x Ga 1-x As quantum well laser

2005 ◽  
Author(s):  
E. L. Albuquerque ◽  
E. C. Ferreira ◽  
J. A. P. da Costa
2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.


Author(s):  
E. L. Albuquerque ◽  
U. L. Fulco ◽  
M. S. Vasconcelos ◽  
P. W. Mauriz

1996 ◽  
Vol 98 (8) ◽  
pp. 737-740 ◽  
Author(s):  
W.J. Fan ◽  
M.F. Li ◽  
T.C. Chong ◽  
J.B. Xia

2008 ◽  
Vol 5 (6) ◽  
pp. 2126-2128 ◽  
Author(s):  
Kazunobu Kojima ◽  
Mitsuru Funato ◽  
Yoichi Kawakami ◽  
Harald Braun ◽  
Ulrich Schwarz ◽  
...  

1996 ◽  
Vol 80 (1) ◽  
pp. 582-584 ◽  
Author(s):  
Alexander Schönfelder ◽  
John D. Ralston ◽  
Konrad Czotscher ◽  
Stefan Weisser ◽  
Josef Rosenzweig ◽  
...  

1991 ◽  
Vol 70 (10) ◽  
pp. 5246-5253 ◽  
Author(s):  
D. Ahn ◽  
T.‐K. Yoo ◽  
E. Mendez ◽  
S. L. Chuang

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