Temperature and frequency dependence outline of DC electrical conductivity, dielectric constants, and AC electrical conductivity in nanostructured TlInS2 thin films

2019 ◽  
Vol 105 ◽  
pp. 13-18 ◽  
Author(s):  
A. El-ghandour ◽  
N.A. El-Ghamaz ◽  
M.M. El-Nahass ◽  
H.M. Zeyada
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Frequency Dependence ◽  
Dielectric Constants ◽  
Ac Electrical Conductivity ◽  
Dc Electrical Conductivity

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

Temperature dependence of the transient and AC electrical conductivity of porous silicon thin films

2003 ◽  
Vol 101 (1-3) ◽  
pp. 334-337 ◽  
Author(s):  
M. Theodoropoulou ◽  
C.A. Krontiras ◽  
N. Xanthopoulos ◽  
S.N. Georga ◽  
M.N. Pisanias ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Porous Silicon ◽  
Temperature Dependence ◽  
Ac Electrical Conductivity ◽  
Silicon Thin Films

scholarly journals Novel Pressure Sensors Made from Nanocomposites (Biodegradable Polymers–Metal Oxide Nanoparticles): Fabrication and Characterization

2018 ◽  
Vol 63 (8) ◽  
pp. 754 ◽  
Author(s):  
A. Hashim ◽  
A. Hadi
Keyword(s):  
Electrical Conductivity ◽  
Dielectric Properties ◽  
Low Cost ◽  
Metal Oxide Nanoparticles ◽  
Pressure Sensors ◽  
High Sensitivity ◽  
Oxide Nanoparticles ◽  
Ac Electrical Conductivity ◽  
Dc Electrical Conductivity ◽  
Pressure Sensitive

This paper aims to the preparation of novel pressure-sensitive nanocomposites with low cost, light weight, and good sensitivity. The nanocomposites of polyvinyl alcohol, polyacrylic acid, and lead oxide nanoparticles have been investigated. The dielectric properties and dc electrical conductivity of (PVA–PAA–PbO2) nanocomposites have been studied. The dielectric properties of nanocomposites were measured in the frequency range (100 Hz–5 MHz). The experimental results showed that the dielectric constant and dielectric loss of (PVA–PAA–PbO2) nanocomposites decrease, as the frequency increases, and they increase with the concentrations of PbO2 nanoparticles. The ac electrical conductivity of (PVA–PAA–PbO2) nanocomposites increases with the frequency and the concentrations of PbO2 nanoparticles. The dc electrical conductivity of (PVA–PAA–PbO2) nanocomposites also increases with the concentrations of PbO2 nanoparticles. The application of pressure-sensitive nanocomposites has been examined in the pressure interval (60–200) bar. The results showed that the electrical resistance of (PVA–PAA–PbO2) pressure-sensitive nanocomposites decreases, as the compressive stress increases. The (PVA–PAA–PbO2) nanocomposites have high sensitivity to pressure.

Optical and Electrical Properties of Ion Beam Effects in Ge10Se70Bi20 Thin Films

2021 ◽  
Author(s):  
M Abdelhamid ◽  
A Abdel Reheem ◽  
N Kassem ◽  
A Ashour
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Data Storage ◽  
Ion Beam ◽  
Optical Data Storage ◽  
Optical Measurements ◽  
Optical Data ◽  
X Ray ◽  
Glass Substrates ◽  
Dc Electrical Conductivity

Abstract In this study, chalcogenide material Ge 10 Se 70 Bi 20 thin films have been fabricated utilizing the thermal evaporation technique of bulk samples on glass substrates. After that, the original Ge 10 Se 70 Bi 20 thin films irradiated by different types of an ion beam. The compositions of the original film was determined by the Energy Dispersive X-Ray (EDX). X-ray diffraction (XRD) measurements were performed to characterize and examine the induced variations in the structure of Ge 10 Se 70 Bi 20 films after irradiation. From the optical measurements, the absorption edge, bandgap, Urbach energy, Tauc parameter, and extinction coefficient of the unirradiated and irradiated films were determined. In particular, the DC electrical conductivity increased by two orders after the pure film was exposed to an oxygen ion beam. Besides, the activation energy and Mott’s parameters for the original and irradiated Ge 10 Se 70 Bi 20 films were deduced. The reported variations in absorption coefficient, optical bandgap, dc electrical conductivity, and Mott’s parameters propose that the irradiated Ge 10 Se 70 B 20 thin films can be used in important applications, e.g., optical data storage and optoelectronic devices.

Sign in / Sign up

Export Citation Format

Share Document