Controlled doping of graphene using ZnO substrates

2016 ◽  
Vol 80 ◽  
pp. 115-119 ◽  
Author(s):  
Misuk Si ◽  
Won Jin Choi ◽  
Yoon Jang Jeong ◽  
Young Kuk Lee ◽  
Ju-Jin Kim ◽  
...  
Keyword(s):  
Controlled Doping

Radial-Position-Controlled Doping of CdS/ZnS Core/Shell Nanocrystals: Surface Effects and Position-Dependent Properties

2009 ◽  
Vol 15 (13) ◽  
pp. 3186-3197 ◽  
Author(s):  
Yongan Yang ◽  
Ou Chen ◽  
Alexander Angerhofer ◽  
Y. Charles Cao
Keyword(s):  
Surface Effects ◽  
Radial Position ◽  
Core Shell ◽  
Controlled Doping

scholarly journals Physico-chemical characterization of hybridized graphene and boron-nitride layers

2018 ◽  
Vol 7 (3) ◽  
pp. 223
Author(s):  
Paulina Raquel Martínez-Alanis ◽  
Antonio Alvarez de la Paz ◽  
Ruben Santamaria
Keyword(s):  
Boron Nitride ◽  
Chemical Characterization ◽  
Hybrid Layer ◽  
Net Charge ◽  
Physico Chemical ◽  
Propagating Waves ◽  
Nitride Layers ◽  
Molecular Electrostatic Potential Maps ◽  
Controlled Doping

<p>New materials can be created by modifying matter. In this work we characterize graphene and boron-nitride (BN) layers after doping them with BN and carbon dimers, respectively, in different amounts and with different spatial distributions. We provide the energetic description, electron density features, molecular electrostatic potential maps, net charge populations, and the speeds of propagating waves on the hybridized layers. We show the possibility of designing molecular electrostatic potentials from a spatially controlled doping. A strategy is illustrated on a BN hybrid layer with the adsorption of DNA nucleic acid bases.</p>

Controlled doping of molecular organic layers: Physics and device prospects

2007 ◽  
pp. 77-90 ◽  
Author(s):  
M. Pfaiffer ◽  
T. Fritz ◽  
J. Blochwitz ◽  
A. Nollau ◽  
B. Plönnigs ◽  
...  
Keyword(s):  
Organic Layers ◽  
Controlled Doping

scholarly journals Controlled doping of a bosonic quantum gas with single neutral atoms

2018 ◽  
Vol 52 (1) ◽  
pp. 015301 ◽  
Author(s):  
Daniel Mayer ◽  
Felix Schmidt ◽  
Daniel Adam ◽  
Steve Haupt ◽  
Jennifer Koch ◽  
...  
Keyword(s):  
Quantum Gas ◽  
Neutral Atoms ◽  
Controlled Doping

Yb^3+:YAG crystal growth with controlled doping distribution

2011 ◽  
Vol 2 (1) ◽  
pp. 20 ◽  
Author(s):  
M. Azrakantsyan ◽  
D. Albach ◽  
N. Ananyan ◽  
V. Gevorgyan ◽  
J.-C. Chanteloup
Keyword(s):  
Crystal Growth ◽  
Controlled Doping

Energy-Band Engineering for Tunable Memory Characteristics through Controlled Doping of Reduced Graphene Oxide

ACS Nano ◽  
2014 ◽  
Vol 8 (2) ◽  
pp. 1923-1931 ◽  
Author(s):  
Su-Ting Han ◽  
Ye Zhou ◽  
Qing Dan Yang ◽  
Li Zhou ◽  
Long-Biao Huang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Energy Band ◽  
Band Engineering ◽  
Reduced Graphene ◽  
Controlled Doping ◽  
Memory Characteristics

The Contribution of Beam Processing to Present and Future Integrated Circuit Technologies

1983 ◽  
Vol 13 ◽  
Author(s):  
C Hill
Keyword(s):  
Pulse Laser ◽  
Present State ◽  
Integrated Circuit ◽  
Bipolar Transistor ◽  
Device Development ◽  
Processing Techniques ◽  
Doping Profiles ◽  
Controlled Doping ◽  
Circuit Technology ◽  
Base Structure

ABSTRACTA brief history and present state of beam processing techniques and applications to silicon integrated circuit technology are given. The viability of incorporating pulse-laser controlled doping profiles into the emitter-base structure of an advanced bipolar transistor is discussed. The areas of present I.C. technology which will constrain future device development are identified, and the contribution that beam processing can make in removing these constraints is discussed. The beam processing techniques most likely to be found in future I.C. technologies are described.

Tuning the Thermoelectric Properties of Ca9Zn4+xSb9by Controlled Doping on the Interstitial Structure

2016 ◽  
Vol 28 (19) ◽  
pp. 6917-6924 ◽  
Author(s):  
Zhen Wu ◽  
Jun Li ◽  
Xin Li ◽  
Min Zhu ◽  
Ke-chen Wu ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Controlled Doping

Silicon-Silicide Eutectic Composites

1993 ◽  
Vol 320 ◽  
Author(s):  
Brian M. Ditchek ◽  
Quang V. Nguyen ◽  
Philip G. Rossoni
Keyword(s):  
X Ray Diffraction ◽  
Two Phase ◽  
High Quantum Efficiency ◽  
Silicon Matrix ◽  
X Ray ◽  
High Resolution Tem ◽  
Device Applications ◽  
Electron Beam Induced Current ◽  
Controlled Doping ◽  
Very High

ABSTRACTMany silicides, including TaSi2, CoSi2, TiSi2and others, form eutectics with silicon. Directional solidification of melts with the eutectic composition and controlled doping of the silicon matrix results in two-phase electronic composites with oriented structures. Such composites have unusual microstructures and interesting properties resulting from the high density of Schottky junctions. In this paper, the growth, microstructure, transport properties and device applications of silicon-silicide composites are reviewed, concentrating mostly on the benchmark Si-TaSi2system. The Si-TaSi2interface, formed upon solidification, is characterized electrically as well as structurally by electron-beam induced current techniques, x-ray diffraction and high resolution TEM. It is shown that the interface is of remarkably good quality allowing the fabrication of very high quantum efficiency (80%) photodiodes and high voltage (up to 6kV) transistors.

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