A facile room temperature electrochemical deposition of pyramidal ZnO nanostructures: Suppressing the green emission

2012 ◽  
Vol 44 (9) ◽  
pp. 1853-1856 ◽  
Author(s):  
N.K. Hassan ◽  
M.R. Hashim ◽  
Nageh K. Allam
Keyword(s):  
Electrochemical Deposition ◽  
Room Temperature ◽  
Green Emission ◽  
Zno Nanostructures

Morphology and Properties of Tetraleg ZnO Nanostructures Fabricated by Zn-Powder Evaporation without Catalysts at Lower Temperature

2005 ◽  
Vol 879 ◽  
Author(s):  
Yue Zhang ◽  
Yunhua Huang ◽  
Jian He ◽  
Ying Dai ◽  
Sen Wang ◽  
...  
Keyword(s):  
Field Emission ◽  
Room Temperature ◽  
Green Emission ◽  
Building Blocks ◽  
Emission Current Density ◽  
Zinc Powder ◽  
Zno Nanostructures ◽  
Growth Mechanisms ◽  
Pure Zinc ◽  
Lower Temperature

AbstractBy simply controlling temperature and atmosphere, tetraleg ZnO nanostructures with different morphologies and sizes have been fabricated respectively through pure zinc powder evaporation without catalysts at temperature of 600∼800 oC. The growth mechanisms of the nanostructures were proposed and discussed. Photoluminescence spectra showed a UV and green emission peaks at room temperature. Field emission measurements revealed that the turn-on field is very low and the emission current density is relative to the morphology and size. Such ZnO nanostructures are likely to be candidates as building blocks for constructing photonic and field emission crystals.

scholarly journals Improvement of the UV-Sensing Performance of Ga-Doped ZnO Nanostructures via a Wet Chemical Solution at Room Temperature

2021 ◽  
Author(s):  
Yen-Lin Chu ◽  
Sheng-Joue Young ◽  
Tung-Te Chu ◽  
Ajit Khosla ◽  
Kuei-Yuan Chiang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Volume Ratio ◽  
Green Emission ◽  
Hexagonal Wurtzite Structure ◽  
Electrical Performance ◽  
Zno Nanostructures ◽  
Chemical Solution ◽  
Chemical Solution Method ◽  
Wet Chemical ◽  
Doped Zno

Abstract In this investigation, ultraviolet (UV) photodetectors (PDs) were fabricated from zinc oxide (ZnO) and Ga-doped ZnO nanostructures on a Corning glass substrate by a simple wet chemical solution method at room temperature. The prepared devices contained two-dimensional (2-D) nanosheet (NS) structures, which could provide a large surface-area-to-volume ratio for UV-sensing. The ZnO and Ga-doped ZnO materials were respectively named ZPD and ZPD-G. All of the samples revealed a hexagonal wurtzite structure and grew preferentially along the (002) crystal plane. Compared with the photoluminescence (PL) spectrum of the ZPD NSs, the corresponding spectra of the ZPD-G NSs in the 380 nm region and green emission were clearly red-shifted and the number of oxygen vacancies slightly decreased. Under 380 nm UV illumination and a 3 V applied bias, the ZnO UV PDs doped with Ga elements exhibited much higher photoresponsivity and stability compared with the un-doped ZnO PDs, indicating good electrical performance. The ZPD-G samples possessed higher rise and recovery times compared with the ZPD samples; this finding could be attributed to the ability of the former to generate numerous electrons.

Free-standing electrochemically coated MoSx based 3D-printed nanocarbon electrode for solid-state supercapacitor application

Nanoscale ◽  
2021 ◽  
Author(s):  
Kalyan Ghosh ◽  
Martin Pumera
Keyword(s):  
Solid State ◽  
Transition Metal ◽  
Electrochemical Deposition ◽  
Room Temperature ◽  
Free Standing ◽  
Metal Chalcogenide ◽  
Supercapacitor Application ◽  
3D Printed

Room temperature electrochemical deposition of transition metal chalcogenide (MoSx) on 3D-printed nanocarbon fibers based electrodes for custom shaped solid-state supercapacitor.

Fabrication of an Apatite/Collagen Composite Coating on the NiTi Shape Memory Alloy through Electrochemical Deposition and Coating Characterisation

2009 ◽  
Vol 618-619 ◽  
pp. 319-323 ◽  
Author(s):  
Parama Chakraborty Banerjee ◽  
Tao Sun ◽  
Jonathan H.W. Wong ◽  
Min Wang
Keyword(s):  
Shape Memory Alloy ◽  
Shape Memory ◽  
Composite Coating ◽  
Electrochemical Deposition ◽  
Room Temperature ◽  
Composite Coatings ◽  
Deposition Process ◽  
Niti Shape Memory Alloy ◽  
X Ray ◽  
Niti Sma

To improve the biocompatibility and bioactivity of NiTi shape memory alloy (SMA), apatite/collagen composite coatings were fabricated on the surface of NiTi SMA at room temperature using the electrochemical deposition technique. Spherical apatite particles and fibrous collagen that formed the composite coating were visible under scanning electron microscope (SEM). The Ca/P ratio of the apatite component in the coating, as determined by energy dispersive X-ray spectroscopy (EDX), was about 1.38 which is slightly higher than that of octocalcium phosphate (OCP). X-ray diffraction result showed that the apatite was amorphous, which was due to the low temperature (i.e., room temperature) deposition process. The structure of the composite coatings was further characterized using Fourier transform infrared reflection spectroscopy (FTIR). It was also found that, compared to bare NiTi SMA samples, the wettability of as-deposited samples was increased because of the formation of the composite coating.

Green Generation by Single-Pass Frequency-Doubling in a Periodically Poled MgO:LiNbO3 at Room Temperature

2012 ◽  
Vol 622-623 ◽  
pp. 1258-1261
Author(s):  
Hong Bo An ◽  
Bing Hua Su ◽  
Li Hong Niu ◽  
Jun Wen Xue
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Second Harmonic ◽  
Frequency Doubling ◽  
Green Emission ◽  
Simulation Data ◽  
Periodically Poled ◽  
Single Pass ◽  
Narrow Bandwidth ◽  
Rayleigh Length

122mW green emission at 532.3nm with a conversion efficiency of 1.2% was measured by single-pass second-harmonic generation in a 10mm long periodically poled MgO:LiNbO3 (MgO:PPLN) crystal is reported. A continuous-wave Yb-doped fiber laser operating at 1064.6nm with narrow bandwidth of 0.1nm is used as pumping source. The experimental temperature acceptance bandwidth ΔT=4.6°C is a little higher than the simulation data of 4°C. Output power instabilities or variations of the green beam pattern were not observed during experiments. In this work, the optimized efficiency was achieved when the waist located at the center of MgO:PPLN and Rayleigh length equal to its length, and the lens’ location in the system was calculated.

Electrochemical Deposition of (Bi,Sb)2Te3 for Thermoelectric Microdevices

2000 ◽  
Vol 626 ◽  
Author(s):  
Jean-Pierre Fleurial ◽  
Jennifer A. Herman ◽  
G. Jeffrey Snyder ◽  
Margaret A. Ryan ◽  
Alexander Borshchevsky ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Electrochemical Deposition ◽  
Smooth Surface ◽  
Room Temperature ◽  
Aqueous Electrolyte ◽  
Experimental Methods ◽  
Thick Photoresist ◽  
P Type ◽  
Nanoporous Templates ◽  
Deposited Films

ABSTRACTNew experimental methods have been developed to electrochemically deposit p-type Sb-rich Bi2-xSbxTe3, Pb-doped and Bi-doped Bi2Te3, and PbTe thick films. Some of the deposited films were dense and had a smooth surface morphology. These films were deposited potentiostatically at room temperature in an acidic aqueous electrolyte. Experimental deposition of Bi2Te3 alloys into various thick nanoporous templates made out of anodized alumina has also been achieved. Miniaturized thermoelements for microdevices (25 μm tall, 60 μm diameter) were grown by plating through thick photoresist templates. The experimental techniques developed, as well as the transport properties of some of the films and filled templates, will be presented.

Morphology and I-V Characteristics of Electrochemically Deposited Zinc Oxide on Silicon

2021 ◽  
Vol 20 (3) ◽  
pp. 32-36
Author(s):  
Ahmad Bukhairi Md Rashid ◽  
Mastura Shafinaz Zainal Abidin ◽  
Shaharin Fadzli Abd Rahman ◽  
Amirjan Nawabjan
Keyword(s):  
Zinc Oxide ◽  
Electrochemical Deposition ◽  
Dark Current ◽  
Room Temperature ◽  
Volume Ratio ◽  
Deposition Process ◽  
X Ray ◽  
Current Voltage ◽  
Electrochemically Deposited ◽  
A Current

This paper reported on the electrochemical deposition of zinc oxide (ZnO) on p-silicon (p-Si) (100) substrate in the mixture of 0.1 M of zinc chloride (ZnCl2) and potassium chloride (KCl) electrolyte at a volume ratio of 1:1, 3:1 and 5:1 namely Sample A, B and C. The deposition process was done in room temperature with a current density of 10 mA/cm2 for 30 minutes. Prior to the experiment, all samples were treated by RCA cleaning steps. All samples were characterized using scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). The results show that all samples have the same morphology of a flake-like structure with different Zn:O ratio that were 2.81, 2.35 and 2.49 for samples A, B and C. The current-voltage (I-V) characteristic graph was obtained by dark current measurement using Keithley SMU 2400 and the threshold voltage (Vth) values were determined at 2.21 V, 0.85 V and 1.22 V for sample A, B and C respectively which correspond with the Zn:O ratio where the highest value of Zn:O ratio can be found in sample A and the lowest in sample B. Based on these results, it shows that electrochemical deposition technique is capable of being used to deposit the flake-like structure ZnO on semiconductor material to form the p-n junction which behaves like a diode. The value of Vth seems to be depended on the ratio between Zn and O. Higher ratio of Zn and O will cause the higher value of intrinsic carrier concentration and built in potential which will increase the Vth value.

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