Femtosecond laser induced formation of Si nanocrystals and amorphous Si clusters in silicon-rich nitride films

2010 ◽  
Vol 42 (6) ◽  
pp. 1820-1823 ◽  
Author(s):  
V.A. Volodin ◽  
T.T. Korchagina ◽  
J. Koch ◽  
B.N. Chichkov
Keyword(s):  
Femtosecond Laser ◽  
Si Nanocrystals ◽  
Amorphous Si

Raman Spectroscopy of Si Nanocrystals in Nanocrystalline Si Superlattices: Size, Shape and Crystallographic Orientation

2000 ◽  
Vol 638 ◽  
Author(s):  
G. F. Grom ◽  
P. M. Fauchet ◽  
L. Tsybeskov ◽  
J. P. McCaffrey ◽  
H. J. Labbé ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Crystallographic Orientation ◽  
Phonon Scattering ◽  
Solid Phase ◽  
Structural Parameters ◽  
Device Fabrication ◽  
Interface Roughness ◽  
Solid Phase Crystallization ◽  
Si Nanocrystals ◽  
Amorphous Si

AbstractWe use Raman spectroscopy to study the size, shape and crystallographic orientation of silicon nanocrystals formed by solid phase crystallization of amorphous Si/SiO2 superlattices (SLs) grown by radio-frequency sputtering. The first and second Raman peaks broadening, their relative positions and intensities indicate the presence of nanoscale Si objects with a degree of disorder (grain boundaries) and strain (Si/SiO2 interfaces). Shapes of Si nanocrystals sandwiched between SiO2 layers strongly influence the Si/SiO2 interface roughness, which is inferred from the intensities of folded acoustic phonon scattering. The averaged crystallographic orientation of Si nanocrystals is determined by polarized Raman analysis. The laterally elongated nanocrystals exhibit <111> preferred crystallographic orientation along the SL axis due to orientation-dependent crystallization rates. These results demonstrate that control over Si nanocrystals structural parameters has been achieved and that solid phase crystallization of nanometer-thick amorphous Si films remains one of the most promising techniques for Si-based nanoelectronic device fabrication.

Crystallization of Amorphous Si Nanoclusters in SiOx Films Using Femtosecond Laser Pulse Annealings

2012 ◽  
Vol 12 (11) ◽  
pp. 8694-8699 ◽  
Author(s):  
T. T. Korchagina ◽  
A. K. Gutakovsky ◽  
L. I. Fedina ◽  
M. A. Neklyudova ◽  
V. A. Volodin
Keyword(s):  
Laser Pulse ◽  
Femtosecond Laser ◽  
Femtosecond Laser Pulse ◽  
Amorphous Si

Stress Effects on Nanocrystal Formation by Ni-Induced Crystallization of Amorphous Si

2003 ◽  
Vol 762 ◽  
Author(s):  
Yaocheng Liu ◽  
Michael D. Deal ◽  
Mahmooda Sultana ◽  
James D. Plummer
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Crystallization Rate ◽  
Chemical Vapor ◽  
Sputtering Deposition ◽  
Si Nanocrystals ◽  
Pressure Chemical ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

AbstractMetal-induced crystallization (MIC) of amorphous Si is gaining increased interest because of its potential use for low-temperature fabrication of integrated circuits. In this work, the MIC technique was used to make Si nanocrystals and the effects of stress on the crystallization were studied. Amorphous Si films were deposited onto the Si substrate with thermal oxides on top by low-pressure chemical vapor deposition (LPCVD) and then patterned into nanoscale pillars by electron beam lithography and reactive ion etching. A conformal low-temperature oxide (LTO) layer was deposited to cover the pillars, followed by an anisotropic etch back to form a spacer, leaving only the top surface of the pillars exposed to the 5 nm Ni sputtering deposition afterwards. An HF dip was used to partially remove the LTO spacers on the pillars, leading to different LTO thicknesses on different samples. These samples were then annealed to crystallize the amorphous Si pillars, forming Si nanocrystals. Transmission electron microscope (TEM) observations after anneal found a clear dependence of the crystallization rate on the pillar size as well as the LTO thickness. The crystallization rate was lower for pillars with thicker LTO spacers, while for the same LTO thickness the crystallization rate was lower for pillars with narrower width. A model based on the stress in the pillars is proposed to explain this dependence. This model suggests some methods to control the nickel-induced crystallization process and achieve higher quality Si nanocrystals.

Photoluminescence and Raman Spectroscopy Studies of H+ Ion Implanted SOI Structures Formed by Hydrogen Ion Slicing

2001 ◽  
Vol 667 ◽  
Author(s):  
Vladimir P. Popov ◽  
Ida E. Tyschenko ◽  
Konstantin S. Zhuravlev ◽  
Ivan I. Morosov
Keyword(s):  
Raman Spectroscopy ◽  
Silicon Film ◽  
Hydrogen Ion ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Si Nanocrystals ◽  
Heat Treated ◽  
Amorphous Si ◽  
Spectroscopy Studies ◽  
Ion Implanted

ABSTRACTH+ ion implanted SOI structures formed by hydrogen ion slicing have been investigated by Raman spectroscopy and photoluminescence (PL). After implantation the wafers have been heat-treated by either furnace annealing (FA) or rapid thermal annealing (RTA). It has been found that implantation of 3 × 1017 H+/cm2 results in the formation of the amorphous Si layer (a-Si) inside silicon film on insulator. Structural transformations in a-Si depended on the annealing conditions. FA led to crystallization of a-Si and to the formation of monocrystalline silicon films. RTA results in the formation of the layers containing a high density of Si nanocrystals. A comparison of the Raman measurements with the PL data allows to conclude that PL bands obtained near 420 and 500 nm are not associated with the radiative recombination in Si nanocrystals.

Ultrathin amorphous Si layer formation by femtosecond laser pulse irradiation

2007 ◽  
Vol 90 (4) ◽  
pp. 044107 ◽  
Author(s):  
Yusaku Izawa ◽  
Yasukazu Izawa ◽  
Yuichi Setsuhara ◽  
Masaki Hashida ◽  
Masayuki Fujita ◽  
...  
Keyword(s):  
Laser Pulse ◽  
Femtosecond Laser ◽  
Femtosecond Laser Pulse ◽  
Layer Formation ◽  
Pulse Irradiation ◽  
Amorphous Si

scholarly journals Thermally Induced Structural Transformations on Polymorphous Silicon

2005 ◽  
Vol 20 (9) ◽  
pp. 2562-2567 ◽  
Author(s):  
Chandana Rath ◽  
J. Farjas ◽  
P. Roura ◽  
F. Kail ◽  
P. Roca i Cabarrocas ◽  
...  
Keyword(s):  
Evolved Gas Analysis ◽  
Structural Transformations ◽  
Gas Analysis ◽  
Evolved Gas ◽  
Thermally Induced ◽  
Complementary Technique ◽  
Si Nanocrystals ◽  
Si Nanoparticles ◽  
Amorphous Si ◽  
Hydrogenated Amorphous

Polymorphous Si is a nanostructured form of hydrogenated amorphous Si that contains a small fraction of Si nanocrystals or clusters. Its thermally induced transformations such as relaxation, dehydrogenation, and crystallization have been studied by calorimetry and evolved gas analysis as a complementary technique. The observed behavior has been compared to that of conventional hydrogenated amorphous Si and amorphous Si nanoparticles. In the temperature range of our experiments (650–700 °C), crystallization takes place at almost the same temperature in polymorphous and in amorphous Si. In contrast, dehydrogenation processes reflect the presence of different hydrogen states. The calorimetry and evolved gas analysis thermograms clearly show that polymorphous Si shares hydrogen states of both amorphous Si and Si nanoparticles. Finally, the total energy of the main Si–H group present in polymorphous Si has been quantified.

Formation of Si nanocrystals in glass by femtosecond laser micromachining

2011 ◽  
Vol 65 (23-24) ◽  
pp. 3544-3547 ◽  
Author(s):  
Geng Lin ◽  
Huaihai Pan ◽  
Ye Dai ◽  
Fei He ◽  
Danping Chen ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Micromachining ◽  
Femtosecond Laser Micromachining ◽  
Si Nanocrystals
Sign in / Sign up

Export Citation Format

Share Document