Effect of substrate temperature on growth process of GaAs on Si(110) vicinal surface studied by reflection high-energy electron diffraction

2008 ◽  
Vol 40 (4) ◽  
pp. 836-842 ◽  
Author(s):  
Hiroyuki Usui ◽  
Hidehiro Yasuda ◽  
Hirotaro Mori
Keyword(s):  
Electron Diffraction ◽  
Substrate Temperature ◽  
Growth Process ◽  
High Energy ◽  
Energy Electron ◽  
Vicinal Surface ◽  
High Energy Electron ◽  
Gaas On Si

Reflected High Energy Electron Diffraction Optimizing GaSb Film Growth Process

2020 ◽  
Vol 57 (23) ◽  
pp. 231603
Author(s):  
房丹 Fang Dan ◽  
张强 Zhang Qiang ◽  
李含 Li Han ◽  
谷开慧 Gu Kaihui
Keyword(s):  
Electron Diffraction ◽  
Growth Process ◽  
Film Growth ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron

Rheed Intensity Monitored Growth of Bi-Sr-Ca-Cu-O Superconductors

1992 ◽  
Vol 275 ◽  
Author(s):  
Shigeki Sakai ◽  
Yuji Kasai ◽  
Peter Bodin ◽  
Hirofumi Matsuhata
Keyword(s):  
Electron Diffraction ◽  
Growth Process ◽  
Molecular Beam ◽  
Superconducting Films ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Monitoring ◽  
High Energy Electron ◽  
Image Enhancing

ABSTRACTTo make Bi2Sr2CaCu2O8 superconducting films with top insulating SrTiO3, we use the molecular beam epitaxy technique (MBE) with in situ monitoring by reflection high-energy electron diffraction (RHEED). A new (RHEED)image enhancing technique, difference reflection high-energy electron diffraction (DRHEED) gave striking information on the growth process of each layer in the Bi:2212 compound as well as the rough and flat transition occurring during co-evaporated deposition of SrTi03.

Kinematic Approximations in TED and RHEED Analysis of Reconstructed Surfaces

1990 ◽  
Vol 48 (2) ◽  
pp. 396-397
Author(s):  
L. -M. Peng ◽  
M. J. Whelan
Keyword(s):  
Electron Diffraction ◽  
Kinematic Analysis ◽  
Incident Beam ◽  
High Energy ◽  
Energy Electron ◽  
Great Success ◽  
High Energy Electron ◽  
Kinematic Approximation ◽  
Reconstructed Surfaces

In recent years there has been a trend in the structure determination of reconstructed surfaces to use high energy electron diffraction techniques, and to employ a kinematic approximation in analyzing the intensities of surface superlattice reflections. Experimentally this is motivated by the great success of the determination of the dimer adatom stacking fault (DAS) structure of the Si(111) 7 × 7 reconstructed surface.While in the case of transmission electron diffraction (TED) the validity of the kinematic approximation has been examined by using multislice calculations for Si and certain incident beam directions, far less has been done in the reflection high energy electron diffraction (RHEED) case. In this paper we aim to provide a thorough Bloch wave analysis of the various diffraction processes involved, and to set criteria on the validity for the kinematic analysis of the intensities of the surface superlattice reflections.The validity of the kinematic analysis, being common to both the TED and RHEED case, relies primarily on two underlying observations, namely (l)the surface superlattice scattering in the selvedge is kinematically dominating, and (2)the superlattice diffracted beams are uncoupled from the fundamental diffracted beams within the bulk.

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