High sensitivity far-infrared detection by resonant inter-Landau-level scattering

2008 ◽  
Vol 40 (5) ◽  
pp. 1328-1331 ◽  
Author(s):  
C. Notthoff ◽  
A. Lorke ◽  
D. Reuter
Keyword(s):  
Landau Level ◽  
High Sensitivity ◽  
Far Infrared ◽  
Infrared Detection

Far-infrared Detection of C[TINF]3[/TINF] in Sagittarius B2 and IRC +10216

2000 ◽  
Vol 534 (2) ◽  
pp. L199-L202 ◽  
Author(s):  
José Cernicharo ◽  
Javier R. Goicoechea ◽  
Emmanuel Caux
Keyword(s):  
Far Infrared ◽  
Infrared Detection

Far‐infrared photovoltaic effect in a Landau level diode

1989 ◽  
Vol 55 (2) ◽  
pp. 162-164 ◽  
Author(s):  
C. T. Liu ◽  
B. E. Kane ◽  
D. C. Tsui ◽  
G. Weimann
Keyword(s):  
Landau Level ◽  
Photovoltaic Effect ◽  
Far Infrared

Far-infrared detection of a circumstellar dust torus around Sharpless 106

1987 ◽  
Vol 316 ◽  
pp. L75 ◽  
Author(s):  
Paul M. Harvey ◽  
Daniel F. Lester ◽  
Marshall Joy
Keyword(s):  
Far Infrared ◽  
Infrared Detection ◽  
Circumstellar Dust

scholarly journals Far-infrared detection limits - I. Sky confusion due to Galactic cirrus

2005 ◽  
Vol 357 (2) ◽  
pp. 535-547 ◽  
Author(s):  
Woong-Seob Jeong ◽  
Hyung Mok Lee ◽  
Soojong Pak ◽  
Takao Nakagawa ◽  
Suk Minn Kwon ◽  
...  
Keyword(s):  
Detection Limits ◽  
Far Infrared ◽  
Infrared Detection

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

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