Far-infrared detection of a circumstellar dust torus around Sharpless 106

1987 ◽  
Vol 316 ◽  
pp. L75 ◽  
Author(s):  
Paul M. Harvey ◽  
Daniel F. Lester ◽  
Marshall Joy
2000 ◽  
Vol 534 (2) ◽  
pp. L199-L202 ◽  
Author(s):  
José Cernicharo ◽  
Javier R. Goicoechea ◽  
Emmanuel Caux

2000 ◽  
Vol 175 ◽  
pp. 484-487 ◽  
Author(s):  
A.S. Miroshnichenko ◽  
K.S. Bjorkman

AbstractA sample of Be stars with large far-infrared excesses detected by IRAS is selected and their high-resolution IRAS images are examined. The far-infrared emission from most of them is marginally extended and is associated with the optical sources. Modeling of the stars’ spectral energy distributions allows us to rule out the infrared cirrus nature of the excesses. We suggest that the excesses are more likely due to circumstellar dust, possibly formed early in the evolution of the star.


2005 ◽  
Vol 357 (2) ◽  
pp. 535-547 ◽  
Author(s):  
Woong-Seob Jeong ◽  
Hyung Mok Lee ◽  
Soojong Pak ◽  
Takao Nakagawa ◽  
Suk Minn Kwon ◽  
...  

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.


1999 ◽  
Vol 9 (2) ◽  
pp. 3350-3353 ◽  
Author(s):  
M.J.M.E. de Nivelle ◽  
M.P. Bruijn ◽  
P.A.J. de Korte ◽  
S. Sanchez ◽  
M. Elwenspoek ◽  
...  

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