scholarly journals Charge storage and electron/light emission properties of silicon nanocrystals

2007 ◽  
Vol 38 (1-2) ◽  
pp. 59-63 ◽  
Author(s):  
S. Oda ◽  
S.Y. Huang ◽  
M.A. Salem ◽  
D. Hippo ◽  
H. Mizuta
Keyword(s):  
Silicon Nanocrystals ◽  
Light Emission ◽  
Charge Storage ◽  
Emission Properties

Charge storage and light emission properties of three dimension controllable Si nanostructures

2009 ◽  
Vol 6 (3) ◽  
pp. 721-727 ◽  
Author(s):  
Kunji Chen ◽  
Jian Huang ◽  
Zhongyuan Ma ◽  
Xiang Wang ◽  
Yao Yao ◽  
...  
Keyword(s):  
Light Emission ◽  
Charge Storage ◽  
Three Dimension ◽  
Emission Properties ◽  
Si Nanostructures

scholarly journals Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
J. Bornacelli ◽  
J. A. Reyes-Esqueda ◽  
L. Rodríguez-Fernández ◽  
J. L. Ruvalcaba-Sil ◽  
F. J. Jaimes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Metal Ion ◽  
Silicon Nanocrystals ◽  
Hydrogen Diffusion ◽  
Light Emission ◽  
Silica Matrix ◽  
Great Effort ◽  
Elastic Recoil ◽  
Emission Properties

Efficient silicon-based light emitters continue to be a challenge. A great effort has been made in photonics to modify silicon in order to enhance its light emission properties. In this aspect silicon nanocrystals (Si-NCs) have become the main building block of silicon photonic (modulators, waveguide, source, and detectors). In this work, we present an approach based on implantation of Ag (or Au) ions and a proper thermal annealing in order to improve the photoluminescence (PL) emission of Si-NCs embedded in SiO2. The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface). Once Si-NCs are formed inside the SiO2we implant metal ions at energies that do not damage the Si-NCs. We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs. Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration. This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.

scholarly journals Light emission from silicon nanocrystals: Probing a single quantum dot

2006 ◽  
Vol 252 (15) ◽  
pp. 5249-5253 ◽  
Author(s):  
I. Sychugov ◽  
R. Juhasz ◽  
J. Valenta ◽  
M. Zhang ◽  
P. Pirouz ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Silicon Nanocrystals ◽  
Light Emission ◽  
Single Quantum ◽  
Single Quantum Dot

scholarly journals Tailorable, visible light emission from silicon nanocrystals

1999 ◽  
Vol 74 (21) ◽  
pp. 3164-3166 ◽  
Author(s):  
J. P. Wilcoxon ◽  
G. A. Samara
Keyword(s):  
Visible Light ◽  
Silicon Nanocrystals ◽  
Light Emission ◽  
Visible Light Emission

scholarly journals RESEARCH OF ELECTRON RESONANT TUNNELING AND LIGHT EMISSION PROPERTIES OF DOUBLE-BARRIER TUNNER JUNCTION

1999 ◽  
Vol 48 (2) ◽  
pp. 326
Author(s):  
WANG MAO-XIANG ◽  
SUN CHENG-XIU ◽  
SHI XIAO-CHUN ◽  
YU JIAN-HUA
Keyword(s):  
Resonant Tunneling ◽  
Light Emission ◽  
Double Barrier ◽  
Emission Properties

2D perovskite hybrid with both semiconductive and yellow light emission properties

2019 ◽  
Vol 102 ◽  
pp. 90-94 ◽  
Author(s):  
Ling-Yun Rong ◽  
Chao Hu ◽  
Zhong-Ning Xu ◽  
Guan-E Wang ◽  
Guo-Cong Guo
Keyword(s):  
Light Emission ◽  
Yellow Light ◽  
Emission Properties
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