Charge storage and light emission properties of three dimension controllable Si nanostructures

2009 ◽  
Vol 6 (3) ◽  
pp. 721-727 ◽  
Author(s):  
Kunji Chen ◽  
Jian Huang ◽  
Zhongyuan Ma ◽  
Xiang Wang ◽  
Yao Yao ◽  
...  
Keyword(s):  
Light Emission ◽  
Charge Storage ◽  
Three Dimension ◽  
Emission Properties ◽  
Si Nanostructures

scholarly journals Charge storage and electron/light emission properties of silicon nanocrystals

2007 ◽  
Vol 38 (1-2) ◽  
pp. 59-63 ◽  
Author(s):  
S. Oda ◽  
S.Y. Huang ◽  
M.A. Salem ◽  
D. Hippo ◽  
H. Mizuta
Keyword(s):  
Silicon Nanocrystals ◽  
Light Emission ◽  
Charge Storage ◽  
Emission Properties

LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON

1994 ◽  
Vol 08 (02) ◽  
pp. 69-92 ◽  
Author(s):  
XUN WANG
Keyword(s):  
Porous Silicon ◽  
Blue Light ◽  
Light Emission ◽  
Energy State ◽  
Surface Recombination Velocity ◽  
Luminescence Spectroscopy ◽  
Carrier Injection ◽  
Blue Light Emission ◽  
Light Emitting ◽  
Si Nanostructures

In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boiling water treatment. By investigating the luminescence micrographic images and the decaying behaviors of PL spectra, it has been shown that the blue-light emission is believed to be originated from the porous silicon skeleton rather than the surface contaminations. The conditions for achieving blue light need proper size of Si nanostructures, low-surface recombination velocity, and mechanically strong skeleton. The fulfillment of these conditions simultaneously is possible but rather critical. Third, the exciton dynamics in light-emitting porous silicon is studied by using the temperature-dependent and picosecond time-resolved luminescence spectroscopy. A direct evidence of the existence of confined excitons induced by the quantum size effect has been revealed. Two excitation states are found to be responsible for the visible light emission, i.e. a higher lying energy state corresponding to the confined excitons in Si nanostructures and a lower lying state related with surfaces of Si wires or dots. A picture of the carrier transfer between the quantum confined state and the surface localized state has been proposed. Finally, we investigated the transient electroluminescence behaviors of Au/porous silicon/Si/Al structure and found it is very similar to that of an ordinary p-n junction light-emitting diode. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schotky barrier and the porous silicon/p-Si heterojunction into the corrugated Si wires, where the radiative recombination of carriers occurs.

scholarly journals RESEARCH OF ELECTRON RESONANT TUNNELING AND LIGHT EMISSION PROPERTIES OF DOUBLE-BARRIER TUNNER JUNCTION

1999 ◽  
Vol 48 (2) ◽  
pp. 326
Author(s):  
WANG MAO-XIANG ◽  
SUN CHENG-XIU ◽  
SHI XIAO-CHUN ◽  
YU JIAN-HUA
Keyword(s):  
Resonant Tunneling ◽  
Light Emission ◽  
Double Barrier ◽  
Emission Properties

Fabrication of Si Nanostructures for Light Emission Study

1993 ◽  
pp. 23-34
Author(s):  
H. I. Liu ◽  
D. K. Biegelsen ◽  
N. M. Johnson ◽  
F. A. Ponce ◽  
N. I. Maluf ◽  
...  
Keyword(s):  
Light Emission ◽  
Emission Study ◽  
Si Nanostructures

2D perovskite hybrid with both semiconductive and yellow light emission properties

2019 ◽  
Vol 102 ◽  
pp. 90-94 ◽  
Author(s):  
Ling-Yun Rong ◽  
Chao Hu ◽  
Zhong-Ning Xu ◽  
Guan-E Wang ◽  
Guo-Cong Guo
Keyword(s):  
Light Emission ◽  
Yellow Light ◽  
Emission Properties

Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells

2014 ◽  
Vol 105 (5) ◽  
pp. 053104 ◽  
Author(s):  
Ryan G. Banal ◽  
Yoshitaka Taniyasu ◽  
Hideki Yamamoto
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Emission Properties ◽  
Deep Ultraviolet

In-depth and in-plane profiling of light emission properties of InGaN-based laser diode

2004 ◽  
Vol 201 (2) ◽  
pp. 207-211
Author(s):  
M. Godlewski ◽  
E. M. Goldys ◽  
M. R. Phillips ◽  
T. B�ttcher ◽  
S. Figge ◽  
...  
Keyword(s):  
Laser Diode ◽  
Light Emission ◽  
Emission Properties
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