Growth of β-gallium oxide nanostructures by the thermal annealing of compacted gallium nitride powder

2007 ◽  
Vol 36 (2) ◽  
pp. 226-230 ◽  
Author(s):  
Woo-Sik Jung ◽  
Hyeong Uk Joo ◽  
Bong-Ki Min
Keyword(s):  
Gallium Nitride ◽  
Thermal Annealing ◽  
Gallium Oxide ◽  
Nitride Powder ◽  
Oxide Nanostructures

Synthesis and structural properties of beta-gallium oxide particles from gallium nitride powder

2007 ◽  
Vol 101 (1) ◽  
pp. 99-102 ◽  
Author(s):  
Hong-Di Xiao ◽  
Hong-Lei Ma ◽  
Cheng-Shan Xue ◽  
Hui-Zhao Zhuang ◽  
Jin Ma ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Structural Properties ◽  
Gallium Oxide ◽  
Nitride Powder ◽  
Oxide Particles

scholarly journals Investigation of resistive switching in gallium oxide nanostructures formed by local anodic oxidation

2019 ◽  
Vol 1410 ◽  
pp. 012233 ◽  
Author(s):  
R V Tominov ◽  
N A Polupanov ◽  
V I Avilov ◽  
M S Solodovnik ◽  
N V Parshina ◽  
...  
Keyword(s):  
Anodic Oxidation ◽  
Resistive Switching ◽  
Gallium Oxide ◽  
Oxide Nanostructures ◽  
Local Anodic Oxidation

Self-patterned oxide nanostructures grown by post-deposition thermal annealing on stepped surfaces

2006 ◽  
Vol 18 (1) ◽  
pp. 015301 ◽  
Author(s):  
R Bachelet ◽  
S Cottrino ◽  
G Nahélou ◽  
V Coudert ◽  
A Boulle ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Stepped Surfaces ◽  
Oxide Nanostructures ◽  
Post Deposition

Short channel effects on gallium nitride/gallium oxide nanowire transistors

2012 ◽  
Vol 101 (18) ◽  
pp. 183501 ◽  
Author(s):  
J.-W. Yu ◽  
P.-C. Yeh ◽  
S.-L. Wang ◽  
Y.-R. Wu ◽  
M.-H. Mao ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Gallium Oxide ◽  
Short Channel Effects ◽  
Short Channel ◽  
Nanowire Transistors ◽  
Channel Effects

Effect of Thermal Annealing in NH3 Ambient on Nanoporous n-GaN and Subsequent Epilayer

2010 ◽  
Vol 44-47 ◽  
pp. 3016-3020
Author(s):  
Xin Zhong Wang ◽  
Guang Hui Yu ◽  
Shi Guo Li ◽  
Cheng Guo Wu
Keyword(s):  
Gallium Nitride ◽  
Thermal Annealing ◽  
Growth Mechanisms ◽  
Subsequent Growth ◽  
Growth Optimization ◽  
Annealing Effects

Thermal annealing effects on the recovery of surface-etched nanoporous n-type gallium nitride (GaN) templates for growth optimization have been investigated. The electrical and optical performances of nanoporous GaN templates can be improved by annealed at 950°C within the NH3 ambient, leading to the quality increase for subsequent growth. Mechanisms responsible for reducing defects and recovering nonstoichiometric layer are then discussed.

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