Quantized field-electron emission at 300K in self-assembled arrays of silicon nanowires

2007 ◽  
Vol 37 (1-2) ◽  
pp. 212-217 ◽  
Author(s):  
A.I. Klimovskaya ◽  
O.E. Raichev ◽  
A.A. Dadykin ◽  
Yu.M. Litvin ◽  
P.M. Lytvyn ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Electron Emission ◽  
Field Electron Emission ◽  
Field Electron ◽  
Quantized Field ◽  
Self Assembled

Field-electron emission at 300K in self-assembled arrays of silicon nanowires

2006 ◽  
Vol 89 (9) ◽  
pp. 093122 ◽  
Author(s):  
Alla I. Klimovskaya ◽  
Yurii M. Litvin ◽  
Yuliya Yu. Moklyak ◽  
Alex A. Dadykin ◽  
Ted I. Kamins ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Electron Emission ◽  
Field Electron Emission ◽  
Field Electron ◽  
Self Assembled

Diamond-like carbon decoration enhances the field electron emission of silicon nanowires

2013 ◽  
Vol 228 ◽  
pp. S349-S353 ◽  
Author(s):  
Fei Zhao ◽  
Dan-dan Zhao ◽  
Shao-long Wu ◽  
Guo-an Cheng ◽  
Rui-ting Zheng
Keyword(s):  
Silicon Nanowires ◽  
Electron Emission ◽  
Field Electron Emission ◽  
Diamond Like Carbon ◽  
Field Electron

Field and photo-field electron emission from self-assembled Ge–Si nanostructures with quantum dots

2003 ◽  
Vol 74 (1-8) ◽  
pp. 305-318 ◽  
Author(s):  
A.A. Dadykin ◽  
A.G. Naumovets ◽  
Yu.N. Kozyrev ◽  
M.Yu. Rubezhanska ◽  
P.M. Lytvyn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Emission ◽  
Field Electron Emission ◽  
Field Electron ◽  
Self Assembled ◽  
Si Nanostructures

Characteristics of Silicon Nanowire Field Electron Emission

2013 ◽  
Vol 652-654 ◽  
pp. 654-658 ◽  
Author(s):  
Hsin Luen Tsai
Keyword(s):  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Electron Emission ◽  
High Aspect Ratio ◽  
Silicon Nanowire ◽  
Eutectic Point ◽  
Field Electron Emission ◽  
Promising Alternative ◽  
Turn On ◽  
Field Electron

Silicon nanowires with fine tip curvature and high aspect ratio are the promising alternative as the electron emitter to promote field electron emission characteristics. The fabrication of silicon nanowires based on the vapor-liquid-solid (VLS) mechanism was performed in the low pressure chemical vapor deposition chamber in the present work. The gold has its lower eutectic point than other materials and deposited on silicon wafer as the catalyst for silicon nanowire synthesis. The structural properties of the nanowires, including number density, size, aspect ratio and tapering geometry, were optimized by various experimental recipes. The results showed that the low turn-on filed of the nanowire was comparable with the published materials. The 1.2 V/μm low turn-on field was detected from the silicon nanowires which have high aspect ratio and tapered tip emitter when the silicon nanowires were synthesized under the reaction conditions at 620 °C grown for 60 minutes with silane and nitrogen flow rates at 100 SCCM.

Regression Models for the Field Electron Emission Signal

2020 ◽  
Vol 14 (6) ◽  
pp. 1394-1402
Author(s):  
N. V. Egorov ◽  
M. I. Varayun’ ◽  
V. M. Bure ◽  
A. Yu. Antonov
Keyword(s):  
Electron Emission ◽  
Regression Models ◽  
Field Electron Emission ◽  
Emission Signal ◽  
Field Electron

scholarly journals Coulomb blockade in field electron emission from carbon nanotubes

2021 ◽  
Vol 118 (5) ◽  
pp. 053101
Author(s):  
Victor I. Kleshch ◽  
Vitali Porshyn ◽  
Pavel Serbun ◽  
Anton S. Orekhov ◽  
Rinat R. Ismagilov ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electron Emission ◽  
Coulomb Blockade ◽  
Field Electron Emission ◽  
Field Electron

scholarly journals Enhanced Field Electron Emission from Photocurrent Treated Nanostructured Indium Oxide Films

2018 ◽  
Vol 228 ◽  
pp. 04003
Author(s):  
Zhenglin Li ◽  
Fuyuan Si ◽  
Miaomiao Wang ◽  
Weigang He ◽  
Yuwei Zhang
Keyword(s):  
Field Emission ◽  
Indium Oxide ◽  
Electron Emission ◽  
Oxide Films ◽  
Field Electron Emission ◽  
Chemical Vapor Deposition Method ◽  
Treatment Technique ◽  
Field Electron ◽  
Ito Glass ◽  
Indium Oxide Films

Field electron emission currents from nanostructured films always have unsatisfied stability. This paper introduces a photocurrent treatment technique to enhance the filed emission properties, and gives a kind of nanostructured indium oxide film suitable for the technique. The products were prepared on patterned ITO glass substrate by using chemical vapor deposition method. With the increase of reaction time, the morphologies of the films changed from cocoonlike particles to hybrid thin films, and finally flowerlike nanostructures were formed. Photocurrent and field electron emission characteristics of the products have been studied. After photocurrent treatment, the flowerlike indium oxide films show stable field emission current (fluctuation is less than 5%), low field emission threshold (at 7.5 V/m, the current density is 1 mA/cm2) and high enhancement factor of electrical field of 778. The field emission test results validated that the photocurrent treated flowerlike indium oxide films may act as electron emitters and applied in display applications.

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