Self-assembled GaAs/AlGaAs quantum dots by molecular beam epitaxy and in situ AsBr3 etching

2004 ◽  
Vol 23 (3-4) ◽  
pp. 384-389 ◽  
Author(s):  
A Rastelli ◽  
R Songmuang ◽  
O.G Schmidt
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

SELF-ASSEMBLED INDIUM-ARSENIDE ELONGATED NANOSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY

2005 ◽  
Vol 04 (02) ◽  
pp. 253-259 ◽  
Author(s):  
S. SURAPRAPAPICH ◽  
S. THAINOI ◽  
C. LALIEW ◽  
S. KANJANACHUCHAI ◽  
S. PANYAKEOW
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Ex Situ ◽  
Continuous Processing ◽  
Self Assembling ◽  
Processing Step ◽  
Self Assembled ◽  
Processing Steps

Self-assembled InAs elongated nanostructures were fabricated by continuous processing steps, starting from self-assembling of quantum dots, thin capping over the quantum dots to induce an anisotropic strain field, and to anneal the quantum dots in the molecular-beam-epitaxy machine. In-situ RHEED observations at each processing step were studied and confirmed by ex-situ AFM images of the surface morphology. The elongated nanostructures were demonstrated tobe templates for chains of uniform quantum dots.

InAs self-assembled quantum dots grown on an InP (311)B substrate by molecular beam epitaxy

2001 ◽  
Vol 89 (7) ◽  
pp. 4186-4188 ◽  
Author(s):  
Y. F. Li ◽  
J. Z. Wang ◽  
X. L. Ye ◽  
B. Xu ◽  
F. Q. Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

Self-assembled quantum dots and nanoholes by molecular beam epitaxial growth and atomically precise in situ etching

2002 ◽  
Vol 722 ◽  
Author(s):  
S. Kiravittaya ◽  
R. Songmuang ◽  
O. G. Schmidt
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Flat Surface ◽  
Local Strain ◽  
Growth Conditions ◽  
Etching Depth ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth

AbstractEnsembles of homogeneous self-assembled quantum dots (QDs) and nanoholes are fabricated using molecular beam epitaxy in combination with atomically precise in situ etching. Self-assembled InAs QDs with height fluctuations of ±5% were grown using a very low indium growth rate on GaAs (001) substrate. If these dots are capped with GaAs at low temperature, strong room temperature emission at 1.3 νm with a linewidth of 21 meV from the islands is observed. Subsequently, we fabricate homogeneous arrays of nanoholes by in situ etching the GaAs surface of the capped InAs QDs with AsBr3. The depths of the nanoholes can be tuned over a range of 1-6 nm depending on the nominal etching depth and the initial capping layer thickness. We appoint the formation of nanoholes to a pronounced selectivity of the AsBr3 to local strain fields. The holes can be filled with InAs again such that an atomically flat surface is recovered. QDs in the second layer preferentially form at those sites, where the holes were initially created. Growth conditions for the second InAs layer can be chosen in such a way that lateral QD molecules form on a flat surface.

InAs self‐assembled quantum dots on InP by molecular beam epitaxy

1996 ◽  
Vol 68 (7) ◽  
pp. 991-993 ◽  
Author(s):  
S. Fafard ◽  
Z. Wasilewski ◽  
J. McCaffrey ◽  
S. Raymond ◽  
S. Charbonneau
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

Self-assembled zinc blende GaN quantum dots grown by molecular-beam epitaxy

2000 ◽  
Vol 77 (6) ◽  
pp. 809-811 ◽  
Author(s):  
E. Martinez-Guerrero ◽  
C. Adelmann ◽  
F. Chabuel ◽  
J. Simon ◽  
N. T. Pelekanos ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Zinc Blende ◽  
Self Assembled

Self-assembled GaInNAs/GaAs quantum dots grown by solid-source molecular beam epitaxy

2002 ◽  
Vol 242 (1-2) ◽  
pp. 109-115 ◽  
Author(s):  
Z.Z Sun ◽  
S.F Yoon ◽  
K.C Yew ◽  
W.K Loke ◽  
S.Z Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Assembled

Photoluminescence of self-assembled CdSe quantum dots by molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 1121-1125 ◽  
Author(s):  
Nobuo Matsumura ◽  
Takashi Saito ◽  
Junji Saraie
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Cdse Quantum Dots ◽  
Self Assembled
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