Fabrication of two-dimensional n- and p-type in-plane gate transistors from the same p-doped GaAs/In0.1Ga0.9As/Al0.33Ga0.67As heterostructure

2004 ◽  
Vol 21 (2-4) ◽  
pp. 872-875 ◽  
Author(s):  
D Reuter ◽  
A Seekamp ◽  
A.D Wieck
Keyword(s):  
2021 ◽  
Author(s):  
Xiang Wang ◽  
Xin Zhou ◽  
Anyang Cui ◽  
Menghan Deng ◽  
Xionghu Xu ◽  
...  

We demonstrate flexo-photoelectronic effects of both n-type and p-type 2D semiconductors.


Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...


Nano Letters ◽  
2015 ◽  
Vol 15 (6) ◽  
pp. 3703-3708 ◽  
Author(s):  
Ji-Hoon Ahn ◽  
Myoung-Jae Lee ◽  
Hoseok Heo ◽  
Ji Ho Sung ◽  
Kyungwook Kim ◽  
...  
Keyword(s):  

2002 ◽  
Vol 80 (17) ◽  
pp. 3117-3119 ◽  
Author(s):  
M. Myronov ◽  
T. Irisawa ◽  
O. A. Mironov ◽  
S. Koh ◽  
Y. Shiraki ◽  
...  

2018 ◽  
Vol 6 (28) ◽  
pp. 13644-13651 ◽  
Author(s):  
Qi Xiao ◽  
Fei Wu ◽  
MengMeng Han ◽  
Zhen Li ◽  
LinNa Zhu ◽  
...  

A new squaraine-based 2D conjugated polymer was developed as the donor material in polymer solar cells and dopant-free hole transporting material in inverted perovskite solar cells, reaching efficiencies of 6.35% and 18.29%, respectively.


2016 ◽  
Vol 18 (37) ◽  
pp. 25786-25790 ◽  
Author(s):  
Zewen Xiao ◽  
Weiwei Meng ◽  
Jianbo Wang ◽  
Yanfa Yan

To optimize the photovoltaic performance, the 2D (CH3NH3)2Pb(SCN)2I2 perovskite absorber layers should be synthesized under Pb-poor and I-rich conditions so that the dominant defects are VPb, which create shallow defect transition levels and making the absorber layers intrinsically p-type.


2017 ◽  
Vol 19 (34) ◽  
pp. 23492-23496 ◽  
Author(s):  
Lijia Tong ◽  
Junjie He ◽  
Min Yang ◽  
Zheng Chen ◽  
Jing Zhang ◽  
...  

Converting FGaNH to HGaNH can significantly suppress hole mobility (even close to zero) and result in a transition from p-type-like semiconductor (FGaNH) to n-type-like semiconductor (HGaNH).


Nanoscale ◽  
2019 ◽  
Vol 11 (42) ◽  
pp. 19923-19932 ◽  
Author(s):  
Xue-Liang Zhu ◽  
Peng-Fei Liu ◽  
Junrong Zhang ◽  
Ping Zhang ◽  
Wu-Xing Zhou ◽  
...  

Monolayer SnP3 is a novel two-dimensional (2D) semiconductor material with high carrier mobility and large optical absorption coefficient, implying its potential applications in the photovoltaic and thermoelectric (TE) fields.


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