Internal electric field effect on luminescence properties of ZnO/(Mg,Zn)O quantum wells

2004 ◽  
Vol 21 (2-4) ◽  
pp. 671-675 ◽  
Author(s):  
T Makino ◽  
A Ohtomo ◽  
C.H Chia ◽  
Y Segawa ◽  
H Koinuma ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Field Effect ◽  
Luminescence Properties ◽  
Electric Field Effect ◽  
Internal Electric Field

Internal electric-field and segregation effects on luminescence properties of quantum wells

2005 ◽  
Vol 98 (2) ◽  
pp. 023501 ◽  
Author(s):  
G. Gonzalez de la Cruz ◽  
A. Calderon Arenas ◽  
H. Herrera
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Luminescence Properties ◽  
Internal Electric Field

BUILT-IN ELECTRIC FIELD EFFECT ON DONOR IMPURITIES IN STRAINED WURTZITE GaN/AlGaN ASYMMETRIC DOUBLE QUANTUM WELLS

2012 ◽  
Vol 26 (26) ◽  
pp. 1250172 ◽  
Author(s):  
JUN ZHU ◽  
SHI LIANG BAN ◽  
SI HUA HA
Keyword(s):  
Variational Method ◽  
Electric Field ◽  
Quantum Wells ◽  
Ground State ◽  
Field Effect ◽  
Binding Energies ◽  
Double Quantum ◽  
Electric Field Effect ◽  
Material Parameters ◽  
Asymmetric Double Quantum Wells

The ground state binding energies of donor impurities in strained [0001]-oriented wurtzite GaN / Al x Ga 1-x N asymmetric double quantum wells are investigated using a variational method combined with numerical computation. The built-in electric field due to the spontaneous and strain-induced piezoelectric polarization and the strain modification on material parameters are taken into account. The variations of binding energies versus the width of central barrier, the ratio of two well widths, and the impurity position are presented, respectively. It is found that the built-in electric field causes a mutation of binding energies with increasing the width of central barrier to some value. The results for symmetrical double quantum wells and without the built-in electric field are also discussed for comparison.

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