Scanning SQUID microscopy study of electron-doped high-Tc superconductors

2005 ◽  
Vol 426-431 ◽  
pp. 202-207 ◽  
Author(s):  
K. Isawa ◽  
T. Uefuji ◽  
K. Yamada
2003 ◽  
Vol 388-389 ◽  
pp. 267-268
Author(s):  
Junpei Kasai ◽  
Noriaki Okazaki ◽  
Yuri Nakayama ◽  
Teruki Motohashi ◽  
Jun-ichi Shimoyama ◽  
...  

1997 ◽  
Vol 3 (S2) ◽  
pp. 669-670
Author(s):  
Solórzano I.G. ◽  
Kotani T. ◽  
Tuller H.L. ◽  
Van der Sande J.B.

It is currently well recognized that oxides are able to accommodate deviations from stoichiometry (1) and great advances in this understanding have been achieved by using transmission electron microscopy (TEM), particularly through lattice imaging and electron diffraction techniques (2). The physical properties of non-stoichiometric oxides are strongly influenced by their exact composition and for this reason they represent a class of materials with increasing and novel properties that are put to use in, for example, oxygen sensors and high-Tc superconductors. On the other hand, in electroceramic materials, such as TiO2, grain boundary structure and chemistry are important to be characterized in detail since these variables are responsible for the electric activity.Rutile (TiO2) can accommodate relatively large deviations from stoichiometry (TiOx with 2.0≥x≤ 1.75) by the crystallographic shear (CS) mechanism (1). The formation of CS planes is effectively a two-step process which involves the ordering of oxygen vacancies on a crystallographic plane and on their elimination by a shear of the lattice.


2001 ◽  
Vol 72 (S2) ◽  
pp. S263-S266 ◽  
Author(s):  
J. Kasai ◽  
N. Okazaki ◽  
Y. Togawa ◽  
T. Sasagawa ◽  
J. Shimoyama ◽  
...  

Author(s):  
Rajen Dias ◽  
Lars Skoglund ◽  
Zhiyong Wang ◽  
David Smith

Abstract Scanning superconducting quantum interference device (SQUID) microscopy using high-TC SQUID sensor has been slowly gaining acceptance in the failure analysis (FA) community as a number of silicon device manufacturers are applying the tool and technique to an ever-broadening spectrum of silicon technologies for detecting the location of leakage and short failures by imaging the current path through the die and package. This paper will present the application of scanning SQUID microscopy to short isolation on die and explore the integration of this technique into the FA flow. From the examples presented in this paper, it can be seen that die level short isolation has been possible even when the separation from SQUID sensor to current is about 800-900µm. Several potentially useful techniques that will increase the accuracy of locating the die level short nondestructively are also discussed.


2002 ◽  
Vol 367 (1-4) ◽  
pp. 9-14 ◽  
Author(s):  
I Iguchi ◽  
A Sugimoto ◽  
T Yamaguchi ◽  
N Chaki ◽  
T Miyake ◽  
...  

Author(s):  
John Silcox

Determination of the microstructure and microchemistry of small features often provides the insight needed for the understanding of processes in real materials. In many cases, it is not adequate to use microscopy alone. Microdiffraction and microspectroscopic information such as EELS, X-ray microprobe analysis and Auger spectroscopy can all contribute vital parts of the picture. For a number of reasons, dedicated STEM offers considerable promise as a quantitative instrument. In this paper, we review progress towards effective quantitative use of STEM with illustrations drawn from studies of high Tc superconductors, compound semiconductors and metallization of H-terminated silicon.Intrinsically, STEM is a quantitative instrument. Images are acquired directly by detectors in serial mode which is particularly convenient for digital image acquisition, control and display. The VG HB501A at Cornell has been installed in a particularly stable electromagnetic, vibration and acoustic environment. Care has been paid to achieving UHV conditions (i.e., 10-10 Torr). Finally, it has been interfaced with a VAX 3200 work station by Kirkland. This permits, for example, the acquisition of bright field (or energy loss) images and dark field images simultaneously as quantitative arrays in perfect registration.


Author(s):  
Maryvonne Hervieu

Four years after the discovery of superconductivity at high temperature in the Ba-La-Cu-O system, more than thirty new compounds have been synthesized, which can be classified in six series of copper oxides: La2CuO4 - type oxides, bismuth cuprates, YBa2Cu3O7 family, thallium cuprates, lead cuprates and Nd2CuO4 - type oxides. Despite their quite different specific natures, close relationships allow their structures to be simply described through a single mechanism. The fifth first families can indeed be described as intergrowths of multiple oxygen deficient perovskite slabs with multiple rock salt-type slabs, according to the representation [ACuO3-x]m [AO]n.The n and m values are integer in the parent structures, n varying from 0 to 3 and m from 1 to 4; every member of this large family can thus be symbolized by [m,n]. The oxygen deficient character of the perovskite slabs involves the existence or the co-existence of several types of copper environment: octahedral, pyramidal and square planar.Both mechanisms, oxygen deficiency and intergrowth, are well known to give rise easily to nonstoichiometry phenomena. Numerous and various phenomena have actually been characterized in these cuprates, strongly depending on the thermal history of the samples.


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