A comprehensive study of ultrafast carrier dynamics of LT-GaAs: Above and below bandgap regions

2021 ◽  
Vol 602 ◽  
pp. 412441
Author(s):  
Nikita Vashistha ◽  
Mahesh Kumar ◽  
Rajiv K. Singh ◽  
Debiprasad Panda ◽  
Lavi Tyagi ◽  
...  
Keyword(s):  
Carrier Dynamics ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Comprehensive Study ◽  
Lt Gaas

Ultrafast carrier dynamics in LT-GaAs doped with Si delta layers

2017 ◽  
Vol 31 (27) ◽  
pp. 1750195 ◽  
Author(s):  
D. I. Khusyainov ◽  
C. Dekeyser ◽  
A. M. Buryakov ◽  
E. D. Mishina ◽  
G. B. Galiev ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Lifetime ◽  
Carrier Dynamics ◽  
High Resistivity ◽  
Ultrafast Carrier Dynamics ◽  
Si Doping ◽  
Ultrafast Optical ◽  
Donor And Acceptor ◽  
Ultrafast Carrier ◽  
Lt Gaas

We characterized the ultrafast properties of LT-GaAs doped with silicon [Formula: see text]-layers and introduced delta-doping ([Formula: see text]-doping) as efficient method for enhancing the properties of GaAs-based structures which can be useful for terahertz (THz) antenna, ultrafast switches and other high frequency applications. Low temperature grown GaAs (LT-GaAs) became one of the most promising materials for ultrafast optical and THz devices due to its short carrier lifetime and high carrier mobility. Low temperature growth leads to a large number of point defects and an excess of arsenic. Annealing of LT-GaAs creates high resistivity through the formation of As-clusters, which appear due to the excess of arsenic. High resistivity is very important for THz antennas so that voltage can be applied without the risk of breakdown. With [Formula: see text]-Si doping, control of As-clusters is possible, since after annealing, clusters align in the plane where the [Formula: see text]-doping occurs. In this paper, we compare the properties of LT-GaAs-based planar structures with and without [Formula: see text]-Si doping and subsequent annealing. We used pump-probe transient reflectivity as a probe for ultrafast carrier dynamics in LT-GaAs. The results of the experiment were interpreted using the Ortiz model and show that the [Formula: see text]-Si doping increases deep donor and acceptor concentrations and decreases the photoinduced carrier lifetime as compared with LT-GaAs with same growth and annealing temperatures, but without doping.

Ultrafast carrier dynamics and THz conductivity in epitaxial-grown LT-GaAs on silicon for development of THz photoconductive antenna detectors

2019 ◽  
Vol 53 (9) ◽  
pp. 095105
Author(s):  
Jessica Afalla ◽  
Gerald Catindig ◽  
Alexander De Los Reyes ◽  
Elizabeth Prieto ◽  
Maria Angela Faustino ◽  
...  
Keyword(s):  
Carrier Dynamics ◽  
Photoconductive Antenna ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Lt Gaas

Electrochemical Evaluation of Dopant Energetics and the Modulation of Ultrafast Carrier Dynamics in Cu-Doped CdSe Nanocrystals

2017 ◽  
Vol 121 (48) ◽  
pp. 27233-27240 ◽  
Author(s):  
Sourav Maiti ◽  
Jayanta Dana ◽  
Yogesh Jadhav ◽  
Tushar Debnath ◽  
Santosh K. Haram ◽  
...  
Keyword(s):  
Carrier Dynamics ◽  
Cdse Nanocrystals ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Electrochemical Evaluation

Terahertz Generation Study of Ultrafast Carrier Dynamics in Polycrystalline Low-Temperature GaAs

2003 ◽  
Vol 93 ◽  
pp. 367-374
Author(s):  
N. Kawasaki ◽  
Takeshi Yoshimura ◽  
Masayoshi Tonouchi ◽  
M. Tani ◽  
Kazufumi Sakai ◽  
...  
Keyword(s):  
Low Temperature ◽  
Carrier Dynamics ◽  
Terahertz Generation ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Low Temperature Gaas

Ultrafast Carrier Dynamics in (Bi1-xInx)2Se3 Thin Films: From Topological to Band Insulator

2021 ◽  
Author(s):  
Kateryna Kushnir ◽  
Teng Shi ◽  
Zhengtianye Wang ◽  
Stephanie Law ◽  
Lyubov Titova
Keyword(s):  
Thin Films ◽  
Carrier Dynamics ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier ◽  
Band Insulator

Engineering Ultrafast Carrier Dynamics at the Graphene/GaAs Interface by Bulk Doping Level

2019 ◽  
Vol 7 (19) ◽  
pp. 1900580 ◽  
Author(s):  
Jinghuan Yang ◽  
Quan Sun ◽  
Wei Liu ◽  
Zhibin Zhang ◽  
Xiaoyong Hu ◽  
...  
Keyword(s):  
Doping Level ◽  
Carrier Dynamics ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier

scholarly journals Carrier Dynamics: Transient SHG Imaging on Ultrafast Carrier Dynamics of MoS2 Nanosheets (Adv. Mater. 14/2018)

2018 ◽  
Vol 30 (14) ◽  
pp. 1870099
Author(s):  
Houk Jang ◽  
Krishna P. Dhakal ◽  
Kyung-Il Joo ◽  
Won Seok Yun ◽  
Sachin M. Shinde ◽  
...  
Keyword(s):  
Carrier Dynamics ◽  
Mos2 Nanosheets ◽  
Ultrafast Carrier Dynamics ◽  
Ultrafast Carrier
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