Carrier concentration dependency of plasma frequency in SiInZnO/Ag/SiInZnO transparent multilayer

2020 ◽  
Vol 592 ◽  
pp. 412242
Author(s):  
Sang Yeol Lee
Keyword(s):  
Carrier Concentration ◽  
Plasma Frequency ◽  
Concentration Dependency

Correlation of Optical Properties and Structural Analysis for Cobalt Silicide Layers Buried in Silicon

1992 ◽  
Vol 279 ◽  
Author(s):  
C. H. Perry ◽  
F. Lu ◽  
F. Namavar ◽  
H. P. Maruska
Keyword(s):  
Carrier Concentration ◽  
Plasma Frequency ◽  
Optical Data ◽  
Complex Dielectric Constant ◽  
Rutherford Back Scattering ◽  
Si Substrates ◽  
Back Scattering ◽  
Reflectivity Data ◽  
Anneal Temperature ◽  
Effective Carrier

ABSTRACTThe optical reflectivity from buried and exposed CoSi2 layers produced by Co ion implantation of Si substrates has been measured over the energy range 0.012–6.2 eV (0.2- 100 μm). Both unannealed and annealed layers were investigated. The complex dielectric constant of the bare CoSi2 layer was obtained from a Kramers-Kronig analysis. The plasma frequency, carrier concentration and relaxation time of the buried CoSi2 layers were obtained from classical dispersion analyses of the multicomponent reflectivity data. The effective carrier concentration derived from the optical data and the measured chaneling from Rutherford back scattering correlated with anneal temperature.

Plasma frequency determination in YBa2Cu3O6+x as a function of oxygen content

1989 ◽  
Vol 50 (18) ◽  
pp. 2895-2901 ◽  
Author(s):  
N. Bontemps ◽  
D. Fournier ◽  
A.C. Boccara ◽  
P. Monod ◽  
H. Alloul ◽  
...  
Keyword(s):  
Oxygen Content ◽  
Plasma Frequency ◽  
Frequency Determination

Low Temperature Deposition of Zinc Oxide Films

2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay
Keyword(s):  
Zinc Oxide ◽  
Carrier Concentration ◽  
Vacuum Arc ◽  
Zno Films ◽  
Al Alloy ◽  
Pure Zinc ◽  
Zinc Oxide Films ◽  
Alloy Target ◽  
Temperature Deposition ◽  
Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

scholarly journals Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 692
Author(s):  
Jong Hyeon Won ◽  
Seong Ho Han ◽  
Bo Keun Park ◽  
Taek-Mo Chung ◽  
Jeong Hwan Han
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Carrier Concentration ◽  
High Mobility ◽  
Impurity Scattering ◽  
Atomic Layer ◽  
Growth Behavior ◽  
Layer Deposition ◽  
Growth Feature ◽  
O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

scholarly journals LHR effects in nonducted whistler propagation – new observations and numerical modelling

2001 ◽  
Vol 19 (2) ◽  
pp. 147-157 ◽  
Author(s):  
F. Jiřiček ◽  
D. R. Shklyar ◽  
P. Třiska
Keyword(s):  
Wave Propagation ◽  
Numerical Modelling ◽  
Plasma Frequency ◽  
Cutoff Frequency ◽  
Lower Hybrid ◽  
Noise Band ◽  
Maximum Value ◽  
Lower Hybrid Resonance ◽  
Whistler Propagation ◽  
Lower Cutoff

Abstract. VLF-ELF broadband measurements onboard the MAGION 4 and 5 satellites at heights above 1 Re in plasmasphere provide new data on various known phenomena related to ducted and nonducted whistler wave propagation. Two examples are discussed: magnetospherically reflected (MR) whistlers and lower hybrid resonance (LHR) noise band. We present examples of rather complicated MR whistler spectrograms not reported previously and argue the conditions for their generation. Analytical consideration, together with numerical modelling, yield understanding of the main features of those spectrograms. LHR noise band, as well as MR whistlers, is a phenomenon whose source is the energy propagating in the nonducted way. At the plasmaspheric heights, where hydrogen (H+) is the prevailing ion, and electron plasma frequency is much larger than gyrofrequency, the LHR frequency is close to its maximumvalue in a given magnetic field. This frequency is well followed by the observed noise bands. The lower cutoff frequency of this band is somewhat below that maximum value. The reason for this, as well as the possibility of using the LHR noise bands for locating the plasma through position, are discussed.Key words. Magnetospheric physics (plasmasphere; wave propagation)

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