Tailoring the thermoelectric properties of sol-gel grown CZTS/ITO thin films by controlling the secondary phases

2019 ◽  
Vol 558 ◽  
pp. 86-90 ◽  
Author(s):  
Arslan Ashfaq ◽  
J. Jacob ◽  
N. Bano ◽  
A. Ali ◽  
W. Ahmad ◽  
...  
2006 ◽  
Vol 514-516 ◽  
pp. 1155-1160 ◽  
Author(s):  
Talaat Moussa Hammad

Sol gel indium tin oxide thin films (In: Sn = 90:10) were prepared by the sol-gel dipcoating process on silicon buffer substrate. The precursor solution was prepared by mixing SnCl2.2H2O and InCl3 dissolved in ethanol and acetic acid. The crystalline structure and grain orientation of ITO films were determined by X-ray diffraction. The surface morphology of the films was characterized by scanning electron microscope (SEM). Optical transmission and reflectance spectra of the films were analyzed by using a UV-visible spectrophotometer. The transport properties of majority charge carriers for these films were studied by Hall measurement. ITO thin film with electrical resistivity of 7.6 ×10-3 3.cm, Hall mobility of approximately 2 cm2(Vs)-1 and free carrier concentration of approximately 4.2 ×1020 cm-3 are obtained for films 100 nm thick films. The I-V curve measurement showed typical I-V characteristic behavior of sol gel ITO thin films.


2001 ◽  
Vol 672 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
S. B. Krupanidhi ◽  
R. S. Katiyar

ABSTRACTSol-Gel derived Pb0.85La0.15TiO3 PLT15) thin films were deposited on solution derived RuO2/Si, RuO2/Pt/Si and Pt bottom electrodes. Dielectric, tangent loss, hysteresis, J-E, measurements were also carried out on these films. X-ray results established the single phase perovskite formation with no secondary phases of PLT15 thin film on these electrodes. PLT15 thin films on RuO2 bottom electrode showed relatively inferior ferroelectric and dielectric behavior as compared to Pt electrode. Low leakage currents (10-8 A/cm2 at 10 kV/cm) and the observed J-E characteristics have been attributed to poor film-electrode interface. Observed electrical and dielectric properties have been correlated with the film-electrode interface. The interface characteristics were further augmented by depth profile analysis using Auger Electron Spectroscopy.


2019 ◽  
Vol 45 (10) ◽  
pp. 12820-12824 ◽  
Author(s):  
A. Ali ◽  
Jolly Jacob ◽  
Arslan Ashfaq ◽  
M. Tamseel ◽  
K. Mahmood ◽  
...  

2021 ◽  
Vol 123 ◽  
pp. 105587
Author(s):  
Jolly Jacob ◽  
Hafiz T. Ali ◽  
A. Ali ◽  
Khurram Mehboob ◽  
Arslan Ashfaq ◽  
...  

Author(s):  
T.F. Stoica ◽  
V.S. Teodorescu ◽  
M.G. Blanchin ◽  
T.A. Stoica ◽  
M. Gartner ◽  
...  

2011 ◽  
Vol 199-200 ◽  
pp. 1756-1760
Author(s):  
Qi Kang ◽  
Xu Wu ◽  
Jing Liu ◽  
Bin Yang

Transparent and conductive ITO thin films were prepared on quartz glasses by the sol-gel dip-coating method and treated by ultraviolet irradiation, with 4W (254nm), 15W (254nm), 15W (365nm) and 500W (365nm) respectively. The experimental results suggest that UV irradiation could enlarge the size of crystalline and improve the conductive property of ITO thin films significantly. The relative reduction in sheet resistance rose, resulting from increase in power and irradiating time, as well as decrease in wavelength of UV irradiation. In addition, for those samples which were treated by UV irradiation and placed at room temperature for 20 days, the internal action could cause the conductivity to rise, and decrease the minimum sheet resistance to 41.378Ω/m2.


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