scholarly journals Effects of surface morphology on the optical and electrical properties of Schottky diodes of CBD deposited ZnO nanostructures

2018 ◽  
Vol 535 ◽  
pp. 175-180 ◽  
Author(s):  
Benard S. Mwankemwa ◽  
Shadrach Akinkuade ◽  
Kelebogile Maabong ◽  
Jackie M. Nel ◽  
Mmantsae Diale
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Schottky Diodes ◽  
Optical And Electrical Properties ◽  
Zno Nanostructures

Effect of Hydrogen Dilution on Structure and Electronic Properties of Ge:H and GeYSi1-Y Films Deposited by Low Frequency Plasma

2006 ◽  
Vol 910 ◽  
Author(s):  
Andrey Kosarev ◽  
L. Sanchez ◽  
A. Torres ◽  
T. Felter ◽  
A. Ilinskii ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Low Frequency ◽  
Average Diameter ◽  
Gas Flows ◽  
Average Height ◽  
Optical And Electrical Properties ◽  
Hydrogen Dilution ◽  
Frequency Plasma

AbstractWe report on a systematical study of growth rate, surface morphology, hydrogen and oxygen incorporation, optical and electrical properties in Ge:H and GeYSi1-Y:H, Y> 0.85 films, deposited in a capacitive reactor by low frequency PE CVD. Silane and germane were used as feed gases diluted by hydrogen. Hydrogen dilution characterized by R= QH2/[QSiH4+QGeH4], where QH2, QSiH4, and QGeH4 are gas flows of hydrogen, silane and germane, respectively. The flow was varied in the range of R=20 to 80. Composition of the films was characterized by SIMS profiling. We did not observed a significant change of the deposition rate Vd in GeYSi1-Y:H films in all the range of R, while for Ge:H films Vd was significantly reduced after R=50. AFM characterization of the surface morphology demonstrated that at R=50 average height <H>(R) reached maximum in both Ge:H and GeYSi1-Y:H films, while average diameter <D>(R) had a minimum in GeYSi1-Y:H films and maximum in Ge:H films. Both Ge:H and GeYSi1-Y:H films demonstrated change of E04 in the studied range of R, and a minimum clearly appeared in &#61508;E at R=50-60 suggesting significant reduction in weak bonds of these films. The activation energy of conductivity Ea slightly increases with R in Ge:H films and shows no definitive trend in GeYSi1-Y:H: films. Both FTIR and SIMS data show a general trend of reducing hydrogen and oxygen content with R. These two types of films showed different behavior and correlations between surface morphology and optical and electrical properties.

Sign in / Sign up

Export Citation Format

Share Document