Theoretical investigation of stark effect on shallow donor binding energy in InGaN spherical QD-QW

2013 ◽  
Vol 422 ◽  
pp. 47-50 ◽  
Author(s):  
Haddou El Ghazi ◽  
Anouar Jorio ◽  
Izeddine Zorkani
Keyword(s):  
Binding Energy ◽  
Theoretical Investigation ◽  
Stark Effect ◽  
Shallow Donor ◽  
Donor Binding Energy

Stark effect of donor binding energy in a self-assembled GaAs quantum dot subjected to a tilted electric field

2012 ◽  
Vol 376 (42-43) ◽  
pp. 2712-2716 ◽  
Author(s):  
Zaiping Zeng ◽  
Christos S. Garoufalis ◽  
Sotirios Baskoutas ◽  
Andreas F. Terzis
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Stark Effect ◽  
Donor Binding Energy ◽  
Self Assembled ◽  
Gaas Quantum Dot

THE EFFECTS OF HYDROSTATIC PRESSURE AND APPLIED ELECTRIC FIELD ON SHALLOW DONOR IMPURITIES IN GaAs/GaAlAs GRADED QUANTUM WELL

2005 ◽  
Vol 12 (02) ◽  
pp. 155-159 ◽  
Author(s):  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Electric Field ◽  
Quantum Well ◽  
Quantum Confinement ◽  
Variational Approach ◽  
Shallow Donor ◽  
Impurity Position ◽  
Donor Binding Energy ◽  
Electric Field Direction

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs graded quantum well (GQW). We have found that the changes in donor binding energy in GQW strongly depend not only on the quantum confinement, but also on the hydrostatic pressure, on the direction of the electric field and on the impurity position.

THE EFFECTS OF QUANTUM CONFINEMENT ON THE BINDING ENERGY OF HYDROGENIC IMPURITIES IN A SPHERICAL QUANTUM DOT

2006 ◽  
Vol 20 (18) ◽  
pp. 1127-1134 ◽  
Author(s):  
A. JOHN PETER
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Shallow Donor ◽  
Donor Impurity ◽  
Hydrogenic Impurity ◽  
Spherical Quantum Dot ◽  
Impurity Position ◽  
Mass Approximation ◽  
Donor Binding Energy ◽  
Parabolic Confinement

The binding energy of a shallow hydrogenic impurity of a spherical quantum dot confined by harmonic oscillator-like and by rectangular well-like potentials, using a variational procedure within the effective mass approximation, has been determined. The calculations of the binding energy of the donor impurity as a function of the system geometry, and the donor impurity position have been investigated. The binding energy of shallow donor impurity depends not only on the quantum confinements but also on the impurity position. Our results reveal that (i) the donor binding energy decreases as the dot size increases irrespective of the impurity position, and (ii) the binding energy values of rectangular confinement are larger than the values of parabolic confinement and (iii) the rectangular confinement is better than the parabolic confinement in a spherical quantum dot.

Pressure-dependent shallow donor binding energy in InGaN/GaN square QWWs

2013 ◽  
Vol 410 ◽  
pp. 49-52 ◽  
Author(s):  
Haddou El Ghazi ◽  
Anouar Jorio ◽  
Izeddine Zorkani
Keyword(s):  
Binding Energy ◽  
Shallow Donor ◽  
Donor Binding Energy

Stark effect-dependent of ground-state donor binding energy in InGaN/GaN parabolic QWW

2013 ◽  
Vol 412 ◽  
pp. 87-90 ◽  
Author(s):  
Haddou El Ghazi ◽  
Izeddine Zorkani ◽  
Anouar Jorio
Keyword(s):  
Binding Energy ◽  
Ground State ◽  
Stark Effect ◽  
Donor Binding Energy

scholarly journals Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects

2021 ◽  
Vol 4 (1) ◽  
pp. 1-6
Author(s):  
Redouane En-nadir ◽  
Haddou El Ghazi ◽  
Anouar Jorio ◽  
Izeddine Zorkani
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Ground State ◽  
Shallow Donor ◽  
Effect Of Temperature ◽  
Position Effects ◽  
Coupled Quantum Wells ◽  
Impurity Position ◽  
Mass Approximation ◽  
Donor Binding Energy

In this paper, we study the hydrogen-like donor-impurity binding energy of the ground-state change as a function of the well width under the effect of temperature, size, and impurity position. Within the framework of the effective mass approximation, the Schrodinger-Poisson equation has been solved taken account an on-center hydrogen-like impurity in double QWs with rectangular finite confinement potential profile for 10% of indium concentration in the (well region). The eigenvalues and their correspondent eigenvectors have been obtained by the fined element method (FEM). The obtained results are in good agreement with the literature and show that the temperature, size, and the impurity position have a significant impact on the binding energy of a hydrogen-like impurity in symmetric double coupled quantum wells based on non-polar wurtzite (In,Ga) N/GaN core/Shell.

Variational Calculations of Donor Binding Energy in Rectangular Wurtzite Aluminium Gallium Nitride / Gallium Nitride Quantum Wires

2007 ◽  
Vol 1040 ◽  
Author(s):  
Choudhury Jayant Praharaj
Keyword(s):  
Gallium Nitride ◽  
Binding Energy ◽  
Electric Fields ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Potential Profile ◽  
Nitride Semiconductors ◽  
Aluminium Gallium Nitride ◽  
Donor Binding Energy ◽  
Variational Calculations

AbstractWe present variational calculations of donor binding energy in rectangular wurtzite aluminium gallium nitride / gallium nitride quantum wires. We explicitly take into account the effect of spontaneous and piezoelectric polarization on the energy levels of donors in quantum wires. Wurtzite structure nitride semiconductors have spontaneous polarization even in the absence of externally applied electric fields. They also have large piezoelectric polarization when grown as pseudomorphic layers. The magnitude of both polarization components is of the order of 1013 electrons per cm2, and has a non-trivial effect on the potential profile seen by electrons. Due to the large built-in electric fields resulting from the polarization discontinuities at heterojunctions, the binding energies of donors is a strong function of the position inside the quantum wire. The potential profile in the 0001 direction can vary by as much as 1.5eV due to polarization effects for vertical dimensions of the quantum wire up to 20 angstroms. The probability density of electrons tends to concentrate near the minimum of the conduction band profile in the 0001 direction. Donors located close to this minimum tend to have a larger concentration of electron density compared to those located closer to the maximum. As a consequence, the binding energy of the former are higher compared to the latter. We use Lorentzian variational wavefunctions to calculate the binding energy as a function of donor position. The confinement potential enhances the binding by a factor of about 3 compared to donors in bulk nitride semiconductors, from about 30 meV to about 90 meV. The variation of binding energy with position is calculated to be more than 50% for typical compositions of the quantum wire regions. Our calculations will be useful for understanding device applications involving n-type doped nitride semiconductor quantum wires.

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