Stark effect-dependent of ground-state donor binding energy in InGaN/GaN parabolic QWW

2013 ◽  
Vol 412 ◽  
pp. 87-90 ◽  
Author(s):  
Haddou El Ghazi ◽  
Izeddine Zorkani ◽  
Anouar Jorio
Keyword(s):  
Binding Energy ◽  
Ground State ◽  
Stark Effect ◽  
Donor Binding Energy

Stark effect of donor binding energy in a self-assembled GaAs quantum dot subjected to a tilted electric field

2012 ◽  
Vol 376 (42-43) ◽  
pp. 2712-2716 ◽  
Author(s):  
Zaiping Zeng ◽  
Christos S. Garoufalis ◽  
Sotirios Baskoutas ◽  
Andreas F. Terzis
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Stark Effect ◽  
Donor Binding Energy ◽  
Self Assembled ◽  
Gaas Quantum Dot

EFFECT OF Γ-X CROSSOVER ON THE DONOR BINDING ENERGY IN A QUANTUM WELL

2005 ◽  
Vol 19 (25) ◽  
pp. 3861-3868 ◽  
Author(s):  
P. NITHIANANTHI ◽  
K. JAYAKUMAR
Keyword(s):  
Hydrostatic Pressure ◽  
Binding Energy ◽  
Quantum Well ◽  
Excited States ◽  
Conduction Band ◽  
Ground State ◽  
External Hydrostatic Pressure ◽  
Donor Binding Energy ◽  
Dielectric Screening

The effect of Γ-X crossover due to the external hydrostatic pressure on the ground state donor binding energy as well as for some low lying excited states for a Quantum well has been investigated by considering the non-parabolicity of the conduction band and pressure dependent spatial dielectric screening. It is observed that the effect of Γ-X crossover is predominant for ground state than for low lying excited states.

scholarly journals Ground-state Shallow-donor Binding Energy in (In,Ga)N/GaN Double QWs Under Temperature, Size, and the Impurity Position Effects

2021 ◽  
Vol 4 (1) ◽  
pp. 1-6
Author(s):  
Redouane En-nadir ◽  
Haddou El Ghazi ◽  
Anouar Jorio ◽  
Izeddine Zorkani
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Ground State ◽  
Shallow Donor ◽  
Effect Of Temperature ◽  
Position Effects ◽  
Coupled Quantum Wells ◽  
Impurity Position ◽  
Mass Approximation ◽  
Donor Binding Energy

In this paper, we study the hydrogen-like donor-impurity binding energy of the ground-state change as a function of the well width under the effect of temperature, size, and impurity position. Within the framework of the effective mass approximation, the Schrodinger-Poisson equation has been solved taken account an on-center hydrogen-like impurity in double QWs with rectangular finite confinement potential profile for 10% of indium concentration in the (well region). The eigenvalues and their correspondent eigenvectors have been obtained by the fined element method (FEM). The obtained results are in good agreement with the literature and show that the temperature, size, and the impurity position have a significant impact on the binding energy of a hydrogen-like impurity in symmetric double coupled quantum wells based on non-polar wurtzite (In,Ga) N/GaN core/Shell.

HYDROGENIC IMPURITY STATES IN WURTZITE ZnO/MgZnO QUANTUM DOT

2010 ◽  
Vol 24 (28) ◽  
pp. 2793-2801
Author(s):  
ZAIPING ZENG ◽  
SHUYI WEI ◽  
JINGBO WEI
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Electric Field ◽  
Ground State ◽  
Asymmetric Distribution ◽  
Electric Field Effect ◽  
Hydrogenic Impurity ◽  
Mass Approximation ◽  
Donor Binding Energy ◽  
The Right

Based on the effective-mass approximation, considering the built-in electric field effect due to the spontaneous and piezoelectric polarizations, the ground-state donor binding energy of a hygrogenic impurity in a cylindrical wurzite (WZ) ZnO / MgZnO strained quantum dot (QD) is investigated variationally. Numerical results show that the ground-state donor binding energy is highly dependent on the Mg composition, the impurity positions and the QD size. The built-in electric field also induces an asymmetric distribution of the ground-state donor binding energy with respect to the center of the QD. In particular, it is found that the ground-state donor binding energy is insensible to the dot height when the impurity is located at the right boundary of the WZ ZnO / MgZnO strained QD if the dot height is large.

SPIN-SPLITTING OF THE BOUND POLARON'S GROUND STATE BINDING ENERGY INDUCED BY THE RASHBA SPIN–ORBIT INTERACTION UNDER THE PERPENDICULAR MAGNETIC FIELD

2008 ◽  
Vol 22 (12) ◽  
pp. 1923-1932
Author(s):  
JIA LIU ◽  
ZI-YU CHEN
Keyword(s):  
Magnetic Field ◽  
External Magnetic Field ◽  
Binding Energy ◽  
Ground State ◽  
Spin Splitting ◽  
Perpendicular Magnetic Field ◽  
Spin Orbit ◽  
Ground State Binding Energy ◽  
Bound Polaron ◽  
Rashba Spin

The influence of a perpendicular magnetic field on a bound polaron near the interface of a polar–polar semiconductor with Rashba effect has been investigated. The material is based on a GaAs / Al x Ga 1-x As heterojunction and the Al concentration varying from 0.2 ≤ x ≤ 0.4 is the critical value below which the Al x Ga 1-x As is a direct band gap semiconductor.The external magnetic field strongly altered the ground state binding energy of the polaron and the Rashba spin–orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splitting of the ground state binding energy of the bound polaron. How the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity and the electron area density have been shown in this paper, taking into account the SO coupling. The contribution of the phonons are also considered. It is found that the spin-splitting states of the bound polaron are more stable, and, in the condition of weak magnetic field, the Zeeman effect can be neglected.

The binding energies of atomic nuclei III. Nuclear forces and the ground state of oxygen 16

1959 ◽  
Vol 253 (1273) ◽  
pp. 186-198 ◽  
Keyword(s):  
Binding Energy ◽  
Electron Scattering ◽  
Ground State ◽  
Binding Energies ◽  
Wave Functions ◽  
Unperturbed System ◽  
Core Radius ◽  
Nuclear Forces ◽  
Potential Core ◽  
Atomic Nuclei

The r. m. s. radius and the binding energy of oxygen 16 are calculated for several different internueleon potentials. These potentials all fit the low-energy data for two nucleons, they have hard cores of differing radii, and they include the Gammel-Thaler potential (core radius 0·4 fermi). The calculated r. m. s. radii range from 1·5 f for a potential with core radius 0·2 f to 2·0 f for a core radius 0·6 f. The value obtained from electron scattering experiments is 2·65 f. The calculated binding energies range from 256 MeV for a core radius 0·2 f to 118 MeV for core 0·5 f. The experimental value of binding energy is 127·3 MeV. The 25% discrepancy in the calculated r. m. s. radius may be due to the limitations of harmonic oscillator wave functions used in the unperturbed system.

POSSIBLE EVIDENCE FOR A VALENCE BAND SATELLITE IN PHOTOEMISSION SPECTRA FROM Sc(0001)

1994 ◽  
Vol 01 (04) ◽  
pp. 649-653 ◽  
Author(s):  
A.J. PATCHETT ◽  
S.S. DHESI ◽  
R.I.R. BLYTH ◽  
S.D. BARRETT
Keyword(s):  
Electronic Structure ◽  
Rare Earth ◽  
Binding Energy ◽  
Single Crystals ◽  
Valence Band ◽  
Ground State ◽  
Rare Earth Metals ◽  
Final State ◽  
Bulk Single Crystals ◽  
The Creation

An intense photoemission feature is observed at a binding energy of ~10 eV in the UV photoemission spectra from the (0001) surfaces of bulk single crystals of rare-earth metals. This emission cannot be explained in terms of ground state electronic structure and we have been unable to attribute its existence to the presence of contamination of the surface. We present some evidence that may indicate its origin lies in the creation, by the photoemission process, of a metastable two-hole final state.

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