Synthesis, optoelectronic properties and photoelectrochemical performance of CdS thin films

2013 ◽  
Vol 411 ◽  
pp. 118-121 ◽  
Author(s):  
P.A. Chate ◽  
S.S. Patil ◽  
J.S. Patil ◽  
D.J. Sathe ◽  
P.P. Hankare
Keyword(s):  
Thin Films ◽  
Optoelectronic Properties ◽  
Photoelectrochemical Performance ◽  
Cds Thin Films

scholarly journals Annealing-Induced Modifications in Physicochemical and Optoelectronic Properties of Ag-Doped Nanostructured CdS Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Vidya S. Taur ◽  
Rajesh A. Joshi ◽  
Ramphal Sharma
Keyword(s):  
Thin Films ◽  
Annealing Treatment ◽  
Cost Effective ◽  
Peak Position ◽  
Optoelectronic Properties ◽  
Sem Images ◽  
X Ray ◽  
Optical Absorbance ◽  
Air Atmosphere ◽  
Cds Thin Films

The Ag-doped nanostructured CdS thin films are grown by simple, cost effective chemical ion exchange technique at room temperature on ITO-coated glass substrate. These as grown thin films are annealed at 100, 200, 300, and 400°C in air atmosphere for 1 hour. To study the effect of annealing on physicochemical and optoelectronic properties, these as grown and annealed thin films are characterized for structural, compositional, morphological, optical, and electrical properties. X-ray diffraction (XRD) pattern reveals polycrystalline nature of these thin films with increase in crystallite size from 6.4 to 11.2 nm, from XRD the direct identification of Ag doping in CdS thin films cannot be judged, while shift in characteristics peak position of CdS is observed. The Raman spectrum represents increase in full width at half maxima and intensity of characteristic peak, confirming the material modification upon annealing treatment. Presence of Cd, Ag, and S in energy dispersive X-ray analysis spectra (EDAX) confirms expected elemental composition in thin films. Scanning electron microscopy (SEM) images represent grain growth and agglomeration upon annealing. Red shift in optical absorbance strength and energy band gap values from 2.28 to 2.14 eV is obtained.I-Vresponse obtained from as grown and annealed thin films shows an enhancement in photosensitivity from 72% to 96% upon illumination to 100 mW/cm2light source.

Tunable optoelectronic properties of CBD-CdS thin films via bath temperature alterations

2016 ◽  
Vol 49 (9) ◽  
pp. 095109 ◽  
Author(s):  
W G C Kumarage ◽  
R P Wijesundera ◽  
V A Seneviratne ◽  
C P Jayalath ◽  
B S Dassanayake
Keyword(s):  
Thin Films ◽  
Bath Temperature ◽  
Optoelectronic Properties ◽  
Cds Thin Films

Optoelectronic properties of Cl and F doped CdS thin films grown by chemical bath deposition

Optik ◽  
2021 ◽  
Vol 226 ◽  
pp. 166004
Author(s):  
K.E. Nieto-Zepeda ◽  
J.G. Quiñones-Galván ◽  
K. Rodríguez-Rosales ◽  
A. Guillén-Cervantes ◽  
J. Santos-Cruz ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Optoelectronic Properties ◽  
Cds Thin Films

Thickness Dependent Photoelectrochemical Performance of Chemo-Synthesized Nanostructured CdS Thin Films

2014 ◽  
Vol 228 (8) ◽  
Author(s):  
Sharadrao A. Vanalakar ◽  
Sawanta S. Mali ◽  
Mahesh P. Suryawanshi ◽  
Nilesh L. Tarwal ◽  
Ganesh L. Agawane ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectrochemical Performance ◽  
Cds Thin Films

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

Preparation of CdS Thin Films by Reactive Sputtering Method

Shinku ◽  
1974 ◽  
Vol 17 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Hiroharu HIRABAYASHI ◽  
Minoru NOGAMI
Keyword(s):  
Thin Films ◽  
Reactive Sputtering ◽  
Cds Thin Films
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