Electrical conductivity and complex electric modulus of titanium doped nickel–zinc ferrites

2012 ◽  
Vol 407 (4) ◽  
pp. 606-613 ◽  
Author(s):  
M. Kaiser
2020 ◽  
Vol 27 (10) ◽  
pp. 1950217
Author(s):  
M. YILDIRIM ◽  
A. KOCYIGIT

The various levels (5%, 10% and 15%) of Cu-doped TiO2 thin films were grown on the [Formula: see text]-type silicon (Si) wafer by spin coating technique to obtain Al/(Cu:TiO[Formula: see text]/[Formula: see text]-Si (MOS) capacitors. Both the real and imaginary components of complex dielectric ([Formula: see text], complex electric modulus ([Formula: see text], loss tangent (tan [Formula: see text] and alternating electrical conductivity ([Formula: see text] of the obtained Al/(Cu:TiO[Formula: see text]-Si (MOS) capacitors were studied by taking into account the effects of Cu-doping levels into TiO2 viaimpedance spectroscopy method (ISM) in the wide range voltage ([Formula: see text][Formula: see text]V) and frequency (10[Formula: see text]kHz–1[Formula: see text]MHz). All the obtained dielectric parameters were obtained as strongly dependent on frequency, voltage and Cu doping level. The observed anomalous peak in the forward bias region both in the real and imaginary components of [Formula: see text], tan [Formula: see text], complex electric modulus ([Formula: see text] and [Formula: see text] were attributed to the Cu:TiO2 interlay er, series resistance ([Formula: see text], surface states ([Formula: see text], interfacial/surface and dipole polarizations. The higher values of [Formula: see text] at low and intermediate frequencies implied that [Formula: see text] have enough time to follow external ac signal, and also dipoles respond to the applied field to reorient themselves. Consequently, the fabricated Al/(Cu:TiO[Formula: see text]-Si can be successfully used as MOS capacitor or MOS-field-effect transistor (MOSFET) in the industrial applications in near future.


Author(s):  
Sema Türkay ◽  
Adem Tataroğlu

AbstractRF magnetron sputtering was used to grow silicon nitride (Si3N4) thin film on GaAs substrate to form metal–oxide–semiconductor (MOS) capacitor. Complex dielectric permittivity (ε*), complex electric modulus (M*) and complex electrical conductivity (σ*) of the prepared Au/Si3N4/p-GaAs (MOS) capacitor were studied in detail. These parameters were calculated using admittance measurements performed in the range of 150 K-350 K and 50 kHz-1 MHz. It is found that the dielectric constant (ε′) and dielectric loss (ε″) value decrease with increasing frequency. However, as the temperature increases, the ε′ and ε″ increased. Ac conductivity (σac) was increased with increasing both temperature and frequency. The activation energy (Ea) was determined by Arrhenius equation. Besides, the frequency dependence of σac was analyzed by Jonscher’s universal power law (σac = Aωs). Thus, the value of the frequency exponent (s) were determined.


1971 ◽  
Vol 5 (2) ◽  
pp. 449-456
Author(s):  
E. A. Raitman ◽  
S. S. Dindun ◽  
E. I. Trinkler ◽  
A. P. Kovtun

2012 ◽  
Vol 02 (03) ◽  
pp. 185-191 ◽  
Author(s):  
K. Rama Krishna ◽  
K. Vijaya Kumar ◽  
Dachepalli Ravinder

1983 ◽  
Vol 14 (31) ◽  
Author(s):  
R. SATYANARAYANA ◽  
S. R. MURTHY ◽  
T. S. RAO ◽  
S. M. D. RAO

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