Study of insulating electrical conductivity in hydrogenated amorphous silicon–nickel alloys at very low temperature

2011 ◽  
Vol 406 (21) ◽  
pp. 4155-4158 ◽  
Author(s):  
A. Narjis ◽  
A. El kaaouachi ◽  
L. Limouny ◽  
S. Dlimi ◽  
A. Sybous ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Nickel Alloys ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous ◽  
Very Low Temperature

Low Temperature Characteristics of Hydrogenated Amorphous Silicon Field Effect Transistors

1989 ◽  
Vol 149 ◽  
Author(s):  
Byung-Seong Bae ◽  
Deok-Ho Cho ◽  
Jae-Hee Lee ◽  
Choochon Lee ◽  
Jin Jang
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Field Effect Mobility ◽  
Temperature Dependent ◽  
Hydrogenated Amorphous ◽  
Very Low Temperature

ABSTRACTWe investigated the temperature dependent characteristics of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT's) at temperatures down to 20 K. With decreasing temperature, the threshold voltage increased, the field effect mobility and the on-current decreased. The measured on-currents versus inverse temperature above 80 K are represented as the sum of two exponentially varied currents. It is concluded that on-current is nearest-neighbour hopping between 120 K and 80 K. Below this temperature, the temperature dependence of on-current is explained by variable range hopping and below about 30 K on-current becomes nearly independent of temperature. At very low temperature hopping probability may be governed not by temperature but by temperature independent tunneling, depending on the overlap of the wave function. The explanation of threshold voltage increase at low temperature is given.

High Performance Hydrogenated Amorphous Silicon n-i-p Photo-diodes on Glass and Plastic Substrates by Low-temperature Fabrication Process

2007 ◽  
Vol 989 ◽  
Author(s):  
Kyung Ho Kim ◽  
Yuriy Vygranenko ◽  
Mark Bedzyk ◽  
Jeff Hsin Chang ◽  
Tsu Chiang Chuang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
High Performance ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Plastic Substrate ◽  
Process Conditions ◽  
Plastic Substrates ◽  
Hydrogenated Amorphous

AbstractWe report on the fabrication and characterization of hydrogenated amorphous silicon (a-Si:H) films and n-i-p photodiodes on glass and PEN plastic substrates using low-temperature (150°C) plasma-enhanced chemical vapor deposition. Process conditions were optimized for the i-a-Si:H material which had a band gap of ~1.73 eV and low density of states (of the order 1015 cm-3). Diodes with 0.5 μm i-layer demonstrate quantum efficiency ~70%. The reverse dark current of the diodes on glass and PEN plastic substrate is ~10-11 and below 10-10 A/cm2, respectively. We discuss the difference in electrical characteristics of n-i-p diodes on glass and PEN in terms of bulk- and interface-state generation currents.

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