Structural, optical and electronic properties of P doped p-type ZnO thin film

2011 ◽  
Vol 406 (8) ◽  
pp. 1533-1535 ◽  
Author(s):  
S.C. Su ◽  
X.D. Yang ◽  
C.D. Hu
2020 ◽  
pp. 110560
Author(s):  
Mahmoud Bedrouni ◽  
Bachir Kharroubi ◽  
Abdellah Ouerdane ◽  
M'hammed Bouslama ◽  
M'hamed Guezzoul ◽  
...  

2006 ◽  
Vol 21 (12) ◽  
pp. 1522-1526 ◽  
Author(s):  
Z Y Xiao ◽  
Y C Liu ◽  
B H Li ◽  
J Y Zhang ◽  
D X Zhao ◽  
...  

2008 ◽  
Author(s):  
H. Abdul Hamid ◽  
M. J. Abdullah ◽  
A. Abdul Aziz ◽  
H. B. Senin ◽  
G. Carini ◽  
...  

2014 ◽  
Vol 25 (4) ◽  
pp. 1955-1958 ◽  
Author(s):  
Hongwei Liang ◽  
Qiuju Feng ◽  
Xiaochuan Xia ◽  
Rong Li ◽  
Huiying Guo ◽  
...  

2009 ◽  
Vol 97 (3) ◽  
pp. 689-692 ◽  
Author(s):  
Manoj Kumar ◽  
Jyoti Prakash Kar ◽  
In-Soo Kim ◽  
Se-Young Choi ◽  
Jae-Min Myoung
Keyword(s):  

2014 ◽  
Vol 1004-1005 ◽  
pp. 784-787
Author(s):  
Ping Cao ◽  
Yue Bai

In this paper, a simple method is reported to obtain nitrogen-doped p-ZnO film. In this method NH3plasma, generated in a plasma-enhanced chemical vapor deposition system, was employed to treat ZnO thin film. By hall-effect measurement a p type conductivity was observed for the treated film with the hole density of 3.6×1016. XPS result confirmed nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions.


2020 ◽  
Vol 697 ◽  
pp. 137825 ◽  
Author(s):  
Toshihiro Miyata ◽  
Hiroki Tokunaga ◽  
Kyosuke Watanabe ◽  
Noriaki Ikenaga ◽  
Tadatsugu Minami

2007 ◽  
Vol 19 (8-9) ◽  
pp. 727-734 ◽  
Author(s):  
L. P. Dai ◽  
H. Deng ◽  
F. Y. Mao ◽  
J. D. Zang

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