Growth of high-quality ZnO nanowires without a catalyst

2010 ◽  
Vol 405 (19) ◽  
pp. 4216-4218 ◽  
Author(s):  
H.I. Abdulgafour ◽  
Z. Hassan ◽  
N.H. Al-Hardan ◽  
F.K. Yam
Keyword(s):  
Zno Nanowires ◽  
High Quality

Photoluminescence characteristics of high quality ZnO nanowires and its enhancement by polymer covering

2010 ◽  
Vol 96 (2) ◽  
pp. 023111 ◽  
Author(s):  
K. W. Liu ◽  
R. Chen ◽  
G. Z. Xing ◽  
T. Wu ◽  
H. D. Sun
Keyword(s):  
Zno Nanowires ◽  
High Quality

Growth of High Quality ZnO Nanowires on Graphene

2012 ◽  
Vol 12 (2) ◽  
pp. 1551-1554 ◽  
Author(s):  
Keun Young Lee ◽  
Brijesh Kumar ◽  
Hyun-Kyu Park ◽  
Won Mook Choi ◽  
Jae-Young Choi ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
High Quality

Fabrication of ZnO nanowires array with nanodiamond as reductant

RSC Advances ◽  
2016 ◽  
Vol 6 (99) ◽  
pp. 96479-96483 ◽  
Author(s):  
Xin Li ◽  
Shuanglong Feng ◽  
Shuangyi Liu ◽  
Zhenhu Li ◽  
Liang Wang ◽  
...  
Keyword(s):  
Zno Nanowires ◽  
High Quality ◽  
Potential Applications ◽  
Nanowires Array

The availability of well-aligned high quality ZnO nanowires will extend the potential applications of such materials.

Growth and Characterization of ZnO Nanowires

2003 ◽  
Vol 776 ◽  
Author(s):  
Jason B. Baxter ◽  
Ron E.M.W. Bessems ◽  
Eray S. Aydil
Keyword(s):  
Chemical Vapor ◽  
Zno Nanowires ◽  
Ultraviolet Region ◽  
Electromagnetic Spectrum ◽  
High Quality ◽  
Nanowire Diameter ◽  
Nanoparticle Catalysts ◽  
Near Ultraviolet ◽  
20 Nm

AbstractSingle crystal ZnO nanowires were grown by chemical vapor deposition using monodisperse 5 nm or 20 nm diameter gold nanoparticle catalysts to control the nanowire diameter and location. The nanowires reach several microns in length and grow only from the gold nanoparticles. The nanowires have narrowly dispersed diameters, albeit significantly larger than the diameter of the gold particles used for catalyzing the growth. The nanowires grow in the [ 0 1 10 ] or [ 1 1 10 ] directions normal to the lowest energy planes in ZnO. ZnO nanowires emit in the near ultraviolet region of the electromagnetic spectrum upon excitation with highenergy photons or electrons. Electron diffraction and absence of luminescence associated with oxygen vacancies indicate high quality crystalline ZnO nanowires. Cathodoluminescence e mission along the entire length of the wire is consistent with a lack of non-radiative recombination sites associated with defects, lending further support for the high quality of these nanowires.

Low-temperature epitaxial growth of high-quality GaON films on ZnO nanowires for superior photoelectrochemical water splitting

Nano Energy ◽  
2019 ◽  
Vol 66 ◽  
pp. 104089 ◽  
Author(s):  
Hong-Ping Ma ◽  
Jia-He Yang ◽  
Jia-Jia Tao ◽  
Kai-Ping Yuan ◽  
Pei-Hong Cheng ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Water Splitting ◽  
Zno Nanowires ◽  
Photoelectrochemical Water Splitting ◽  
High Quality

GROWTH OF HIGH QUALITY ZINC OXIDE NANOWIRES BY SIMPLE OXIDATION OF ZINC POWDER IN AIR

NANO ◽  
2008 ◽  
Vol 03 (06) ◽  
pp. 477-482 ◽  
Author(s):  
TAE-WOONG KOO ◽  
DONGMOK WHANG
Keyword(s):  
Single Crystal ◽  
Electrical Transport ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Growth Direction ◽  
Zinc Powder ◽  
Zno Nanowires ◽  
Direct Oxidation ◽  
High Quality ◽  
Uniform Diameter

Single-crystal ZnO nanowires are synthesized by direct oxidation of zinc particles in air at a temperature much lower than the melting temperature of zinc solids. This simple and low-cost technique produces dense and high-quality ZnO nanowires. SEM and TEM studies revealed that as-grown ZnO nanowires have a uniform diameter and defect-free single-crystal structure. The growth direction of ZnO nanowires is the a axis, which is different from the common growth direction of one-dimensional ZnO structure. Room temperature PL spectra of ZnO nanowires grown with different oxygen pressures indicated that the quality of ZnO nanowires grown in air is much better than that of wires grown at reduced oxygen pressure. The excellent property of ZnO nanowires grown in air was confirmed by electrical transport measurements of individual ZnO nanowire field effect transistors.

scholarly journals Low-Temperature Growth of ZnO Nanowires from Gravure-Printed ZnO Nanoparticle Seed Layers for Flexible Piezoelectric Devices

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1430
Author(s):  
Andrés Jenaro Lopez Garcia ◽  
Giuliano Sico ◽  
Maria Montanino ◽  
Viktor Defoor ◽  
Manojit Pusty ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Zno Nanowires ◽  
Plastic Substrate ◽  
Homogeneous Distribution ◽  
Zno Nanoparticle ◽  
Gravure Printing ◽  
High Quality ◽  
Piezoelectric Devices ◽  
Seed Layers

Zinc oxide (ZnO) nanowires (NWs) are excellent candidates for the fabrication of energy harvesters, mechanical sensors, and piezotronic and piezophototronic devices. In order to integrate ZnO NWs into flexible devices, low-temperature fabrication methods are required that do not damage the plastic substrate. To date, the deposition of patterned ceramic thin films on flexible substrates is a difficult task to perform under vacuum-free conditions. Printing methods to deposit functional thin films offer many advantages, such as a low cost, low temperature, high throughput, and patterning at the same stage of deposition. Among printing techniques, gravure-based techniques are among the most attractive due to their ability to produce high quality results at high speeds and perform deposition over a large area. In this paper, we explore gravure printing as a cost-effective high-quality method to deposit thin ZnO seed layers on flexible polymer substrates. For the first time, we show that by following a chemical bath deposition (CBD) process, ZnO nanowires may be grown over gravure-printed ZnO nanoparticle seed layers. Piezo-response force microscopy (PFM) reveals the presence of a homogeneous distribution of Zn-polar domains in the NWs, and, by use of the data, the piezoelectric coefficient is estimated to be close to 4 pm/V. The overall results demonstrate that gravure printing is an appropriate method to deposit seed layers at a low temperature and to undertake the direct fabrication of flexible piezoelectric transducers that are based on ZnO nanowires. This work opens the possibility of manufacturing completely vacuum-free solution-based flexible piezoelectric devices.

Ultrafast Laser Deposition of Semiconductor Nanowires

2004 ◽  
Vol 850 ◽  
Author(s):  
Samuel S. Mao
Keyword(s):  
Laser Ablation ◽  
Short Pulse ◽  
Strong Electric Field ◽  
Internal Quantum Efficiency ◽  
Zno Nanowires ◽  
Ultrafast Laser ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
High Quality ◽  
Ultrafast Laser Ablation

ABSTRACTPulsed laser deposition (PLD) has been applied to fabricate thin films of a variety of materials. However, formation of micron-sized particulates during conventional nanosecond laser-based deposition process makes it unsuitable for growing high quality nanoscale materials. Owing to a nonequilibrium non-thermal ablation mechanism and characterized by their short pulse duration compared to thermal diffusion time (tens of picoseconds), ultrafast laser pulses are able to produce particulate-free precursor vapor for nanoscale material deposition. In this article, the foundation of non-thermal ultrafast laser ablation will be examined by both experimental and theoretical investigations. Ultrafast laser-induced high-density electron ejection and subsequent build -up of a strong electric field above the target material were observed. Mass spectrometry and electron microscopy measurements confirmed the particulate-free nature of ultrafast laser ablation. Using ultrafast laser-based particulate-free PLD approach, high quality ZnO nanowires were grown on sapphire and silicon substrates. The optical properties of ZnO nanowires, including the external and internal quantum efficiency of nanowire nanolasers, were experimentally determined. In addition, a nanowire UV photodiode based on p−Si/n−ZnO nanowires was successfully fabricated. This first nanowire photodiode device shows good photocurrent characteristics when operated under reverse bias.

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