Some features of a microdefect revealing in single-crystal silicon by the preferential etching technique

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4657-4660
Author(s):  
Alexandra E. Usenka ◽  
Anatolii V. Yukhnevich
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Etching Technique

Microheater Made of Heavily Boron Doped Single Crystal Silicon Beam

1992 ◽  
Vol 276 ◽  
Author(s):  
Mitsuteru Kimura ◽  
Kazuhiro Komatsuzaki
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Bridge Structure ◽  
Quick Response ◽  
Crystal Silicon ◽  
Etching Technique ◽  
Small Power ◽  
Boron Doped ◽  
Type Layer ◽  
P Type

ABSTRACTMicroheater made of heavily Boron doped single crystal Si beam covered with SiO2 film, 1000×300×3 μm, is fabricated on the n type Si substrate by the anisotropic etching technique. As this microheater has an air bridge structure of low resistivity semiconductor material with positive but small temperature coefficient of resistance, a broad heating area up to 800 °C is easily obtained and it has quick response with the thermal time constant t of about 4 ms and has small power consumption. Since this heating area is made of p type layer in the n type substrate,this area can be electrically isolated from the substrate because of the formation of p-n junction.

Preparation of Thin Single Crystal Silicon Substrates for in situ Electron Microscope Studies

1973 ◽  
Vol 31 ◽  
pp. 120-121
Author(s):  
J. S. Maa ◽  
J. I. Lee ◽  
Thos. E. Hutchinson
Keyword(s):  
Electron Microscope ◽  
Single Crystal ◽  
Ion Beam ◽  
Single Crystal Silicon ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Micro Milling ◽  
Crystal Silicon ◽  
Etching Technique

The in-situ electron microscope technique has been shown to be a powerful method for understanding the nucleation and growth of thin films formed both by vacuum vapor deposition and ion beam sputter-deposition. Single crystal silicon which has only been chosen as substrate for thin film deposition outside the electron microscope has now been prepared in a form suitable for in-situ deposition.The method of the preparation of thin silicon substrate is a combination of jet chemical etching and modified ion beam thinning. A specimen of thickness roughly 0.010 inch is first etched from both sides by the jet etching technique. After jet etching, it is transferred to the Commonwealth Scientific ion micro-milling instrument and bombarded from both sides with Argon ion beam. A pin hole occurs in the center of the specimen after about 30 minutes of ion bombardment.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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