Influence of temperature on dielectric properties of Fe-doped CaCu3Ti4O12 ceramics

2010 ◽  
Vol 405 (1) ◽  
pp. 386-389 ◽  
Author(s):  
Chunhong Mu ◽  
Huaiwu Zhang ◽  
Ying He ◽  
Peng Liu
Keyword(s):  
Dielectric Properties ◽  
Influence Of Temperature ◽  
Influence Of Temperature On

scholarly journals Statistical analysis of the influence of temperature on microstructure contact surfaces on BaTiO3-ceramics doped with Ho2O3

2014 ◽  
Vol 46 (3) ◽  
pp. 345-352 ◽  
Author(s):  
S. Jankovic ◽  
V.V. Mitic ◽  
Lj. Kocic ◽  
V. Paunovic ◽  
M. Miljkovic
Keyword(s):  
Dielectric Properties ◽  
Fractal Geometry ◽  
Quantitative Metallography ◽  
Technological Parameters ◽  
Influence Of Temperature ◽  
New Correlation ◽  
Influence Of Temperature On ◽  
Contact Surfaces ◽  
Temperature Levels ◽  
Scanning Electron

The materials based on BaTiO3 can be controlled using different technological parameters and different additives. The influence of different temperature levels of sintering (1320?C, 1350?C and 1380?C) on the size of contact area for 0.1% Ho2O3 doped BaTiO3-ceramics has been investigated. Microstructural investigations were carried out using scanning electron microscopy (JEOL-JSM 5300) equipped with EDS (QX 2000S) system. Grain size distribution was determined by quantitative metallography method. The new correlation between microstructure and dielectric properties of doped BaTiO3-ceramics based on fractal geometry and contact surface probability is recently developed. The presented results indicate that statistical model of contact surfaces is important for the prognosis of BaTiO3-ceramics microstructure and dielectric properties.

The effect of temperature on high-resolution TEM image contrast

1995 ◽  
Vol 53 ◽  
pp. 640-641
Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz
Keyword(s):  
Form Factor ◽  
Inelastic Scattering ◽  
Accurate Method ◽  
Waller Factor ◽  
Effect Of Temperature ◽  
Specimen Thickness ◽  
Influence Of Temperature ◽  
Debye Waller Factor ◽  
Influence Of Temperature On ◽  
Atomic Form Factor

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).

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