scholarly journals Nd-doped silicon nanowires with room temperature ferromagnetism and infrared photoemission

2009 ◽  
Vol 94 (26) ◽  
pp. 263117 ◽  
Author(s):  
Wei-Fan Lee ◽  
Chung-Yang Lee ◽  
Mei-Lin Ho ◽  
Chi-Te Huang ◽  
Chen-Ho Lai ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Doped Silicon

Photoluminescence and Raman Scattering Correlated Study of Boron-Doped Silicon Nanowires

2005 ◽  
Vol 23 ◽  
pp. 137-140
Author(s):  
X.B. Zeng ◽  
X.B. Liao ◽  
S.T. Dai ◽  
B. Wang ◽  
Y.Y. Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Raman Scattering ◽  
Amorphous Silicon ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Doped Silicon ◽  
81.15 Gh

Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm-1,which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev,1.42ev,1.47ev. Possible reason for these is suggested. PACS: 36.40._c; 81.15.Gh; 81.20._n

Carrier Doping of Silicon Nanowires Synthesized by Laser Ablation

2006 ◽  
Vol 963 ◽  
Author(s):  
Naoki Fukata ◽  
Naoya Okada ◽  
Satoshi Matsushita ◽  
Takao Tsurui ◽  
Shun Ito ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Silicon Nanowires ◽  
Optical Phonon ◽  
Room Temperature ◽  
Vibrational Modes ◽  
Scattering Measurements ◽  
Doped Silicon ◽  
Phonon Peak ◽  
Local Vibrational Modes ◽  
Carrier Doping

ABSTRACTBoron (B) doped silicon nanowires (SiNWs) were synthesized by laser ablation. Local vibrational modes of B in SiNWs were observed by micro-Raman scattering measurements at room temperature. Broadening due to a coupling between the discrete optical phonon and a continuum of interband hole excitations was also observed in the Si optical phonon peak. This is called Fano broadening. These results prove that B atoms were doped in substitutional sites of crystalline Si core of SiNWs during laser ablation.

scholarly journals Room Temperature Strong Infra-Red Light Emission of Boron Doped Silicon Nanowires

2010 ◽  
Vol 16 (S2) ◽  
pp. 824-825
Author(s):  
F Fabbri ◽  
L Lazzarini ◽  
G Salviati ◽  
N Fukata
Keyword(s):  
Silicon Nanowires ◽  
Room Temperature ◽  
Light Emission ◽  
Red Light ◽  
Boron Doped ◽  
Infra Red ◽  
Doped Silicon

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Oxygen vacancy mediated room temperature ferromagnetism in Cu-doped LiNbO3 thin films

2021 ◽  
Vol 527 ◽  
pp. 167775
Author(s):  
Xiaodong Zhou ◽  
Erlei Wang ◽  
Xiaodong Lao ◽  
Yongmei Wang ◽  
Honglei Yuan
Keyword(s):  
Thin Films ◽  
Oxygen Vacancy ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism

Origin of room-temperature ferromagnetism in Co-doped CeO2

2021 ◽  
pp. 413158
Author(s):  
Kenji Tarui ◽  
Tomohiro Oomori ◽  
Yuya Ito ◽  
Tomoyuki Yamamoto
Keyword(s):  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Doped Ceo2 ◽  
Co Doped
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