Numerical study of the magnetization reversal driven by spin-polarized current in MgO-based magnetic tunnel junctions

2008 ◽  
Vol 403 (2-3) ◽  
pp. 364-367 ◽  
Author(s):  
G. Finocchio ◽  
M. Carpentieri ◽  
L. Torres ◽  
G. Consolo ◽  
A. Romeo ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Tunnel Junctions ◽  
Numerical Study ◽  
Magnetic Tunnel Junctions ◽  
Spin Polarized

Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions

2021 ◽  
Vol 118 (8) ◽  
pp. 082404
Author(s):  
Butsurin Jinnai ◽  
Junta Igarashi ◽  
Kyota Watanabe ◽  
Eli Christopher I. Enobio ◽  
Shunsuke Fukami ◽  
...  
Keyword(s):  
Magnetization Reversal ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Shape Anisotropy

Current hysteresis due to changes in magnetization of magnetic tunnel junctions by spin-polarized current

2001 ◽  
Vol 53 (5) ◽  
pp. 625-631 ◽  
Author(s):  
A. M Baranov ◽  
A. I Chmil ◽  
R. J Elliott ◽  
L. A Feigin ◽  
Yu. V Gulyaev ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Polarized

Non-Equilibrium Green’s Function Modeling of the Transport Characteristics of Magnetic Tunnel Junctions Containing Anderson Impurities

SPIN ◽  
2020 ◽  
Vol 10 (01) ◽  
pp. 2050006
Author(s):  
Parvathy Harikumar ◽  
S. Mathi Jaya
Keyword(s):  
Green’S Function ◽  
Green's Function ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Many Body ◽  
Applied Bias ◽  
Tunnel Current ◽  
Spin Polarized ◽  
Barrier Region ◽  
Non Equilibrium Green’S Function

A nonequilibrium Green’s function (NEGF) formulation to study the transport characteristics of magnetic tunnel junctions (MTJs) that contains impurities at the barrier region and many-body interaction at the electrode region is presented. The formulation makes use of the already developed NEGF method for MTJs without any impurities and the impurity Green’s function is obtained using Haldane’s approach that explicitly takes into account the on-site Coulomb interaction ([Formula: see text]) of the impurity. The formulation is used to obtain the spin-dependent tunnel current of model MTJs as a function of the applied bias for different values of [Formula: see text] corresponding to both the parallel and antiparallel configuration of the end electrodes of the MTJ. The tunnel currents are used to obtain the tunnel magnetoresistance (TMR) of the MTJ and we observed from our study that the TMR is strongly influenced by the impurities. The TMR is found to be reduced compared to that of the MTJ without impurities and the bias dependence of the TMR is found to be strongly influenced by [Formula: see text]. Our studies revealed that the MTJ can exhibit almost completely spin polarized current at certain values of [Formula: see text].

scholarly journals Spin-Polarized Electron Tunneling in bccFeCo/MgO/FeCo(001)Magnetic Tunnel Junctions

2012 ◽  
Vol 108 (17) ◽  
Author(s):  
F. Bonell ◽  
T. Hauet ◽  
S. Andrieu ◽  
F. Bertran ◽  
P. Le Fèvre ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Electron Tunneling ◽  
Magnetic Tunnel Junctions ◽  
Spin Polarized
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