Low- and high-frequency C–V characteristics of the contacts formed by adding a solution of the nonpolymeric organic compound on p-type Si substrate

2007 ◽  
Vol 395 (1-2) ◽  
pp. 93-97 ◽  
Author(s):  
M.A. Ebeoğlu ◽  
T. Kılıçoğlu ◽  
M.E. Aydın
Keyword(s):  
Organic Compound ◽  
High Frequency ◽  
Si Substrate ◽  
P Type

Low- and high-frequencyC-V characteristics of the contacts formed by sublimation of the nonpolymeric organic compound on p-type Si substrate

2004 ◽  
Vol 201 (14) ◽  
pp. 3077-3086 ◽  
Author(s):  
C. Temirci ◽  
M. �akar ◽  
A. T�r�t ◽  
Y. Onganer
Keyword(s):  
Organic Compound ◽  
Si Substrate ◽  
P Type

scholarly journals Molecular characterization of G and P-types bovine rotavirus strains from Goiás, Brazil: high frequency of mixed P-type infections

2010 ◽  
Vol 105 (8) ◽  
pp. 1040-1043 ◽  
Author(s):  
Thabata Alessandra Ramos Caruzo ◽  
Willia Marta Elsner Diederichsen de Brito ◽  
Veridiana Munford ◽  
Maria Lúcia Rácz
Keyword(s):  
Molecular Characterization ◽  
High Frequency ◽  
Bovine Rotavirus ◽  
P Type

scholarly journals Novel Negative Capacitance and Conductance in All Temperatures and Voltages of Au/CNTs/n-Si/Al at Low and High Frequencies

2021 ◽  
Author(s):  
A. Ashery ◽  
Samia Gad ◽  
A. E.H. Gaballah ◽  
G. M. Turky
Keyword(s):  
Carbon Nanotube ◽  
High Frequency ◽  
Series Resistance ◽  
Negative Capacitance ◽  
Donor Concentration ◽  
Low Frequencies ◽  
High Frequencies ◽  
Depletion Width ◽  
Density Surface ◽  
P Type

Abstract The structure of carbon nanotube CNTs functioning as p-type material deposited over n-type silicon to produce heterojunction of Au/CNTs/n-Si/Al is presented in this study.This work explored the capacitance and conductance at various frequencies, temperatures, and voltages, the novelty here is that negative capacitance and conductance were observed at high frequencies in all temperatures and voltages, whereas capacitance appeared at both high and low frequencies, such as (2x107,1x107,1x102,10) Hz. At high-frequency f = 2x107 Hz, the capacitance raises while the conductance decreases; at all temperatures and voltages, the capacitance and conductance exhibit the same behavior at particular frequencies such as 1x106,1x105,1x104,1x103Hz, however their behavior differs at 2x107,1x107, 1x102 and 10Hz. Investigating the reverse square capacitance with voltage yielded the energy fermi (Ef), density surface of states (Nss), depletion width (Wd), barrier height, series resistance, and donor concentration (Nd)

Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering

2017 ◽  
Vol 51 (5) ◽  
pp. 559-564 ◽  
Author(s):  
M. M. Mezdrogina ◽  
A. Ya. Vinogradov ◽  
V. S. Levitskii ◽  
E. E. Terukova ◽  
Yu. V. Kozhanova ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Frequency ◽  
Zno Films ◽  
Type Conductivity ◽  
P Type

scholarly journals Low cost, p-ZnO/n-Si, rectifying, nano heterojunction diode: Fabrication and electrical characterization

2014 ◽  
Vol 5 ◽  
pp. 2216-2221 ◽  
Author(s):  
Vinay Kabra ◽  
Lubna Aamir ◽  
M M Malik
Keyword(s):  
Zno Nanoparticles ◽  
Low Cost ◽  
Electrical Characterization ◽  
Hall Effect Measurement ◽  
Dip Coating ◽  
Si Substrate ◽  
Electronic Circuitry ◽  
Uv Illumination ◽  
P Type ◽  
Dip Coating Technique

A low cost, highly rectifying, nano heterojunction (p-ZnO/n-Si) diode was fabricated using solution-processed, p-type, ZnO nanoparticles and an n-type Si substrate. p-type ZnO nanoparticles were synthesized using a chemical synthesis route and characterized by XRD and a Hall effect measurement system. The device was fabricated by forming thin film of synthesized p-ZnO nanoparticles on an n-Si substrate using a dip coating technique. The device was then characterized by current–voltage (I–V) and capacitance–voltage (C–V) measurements. The effect of UV illumination on the I–V characteristics was also explored and indicated the formation of a highly rectifying, nano heterojunction with a rectification ratio of 101 at 3 V, which increased nearly 2.5 times (232 at 3 V) under UV illumination. However, the cut-in voltage decreases from 1.5 V to 0.9 V under UV illumination. The fabricated device could be used in switches, rectifiers, clipper and clamper circuits, BJTs, MOSFETs and other electronic circuitry.

Effect of Layer Relaxation on the Internal Photoemission in Pt/Si1−xGex Schottky Barrier Type Infrared Detectors

1999 ◽  
Vol 607 ◽  
Author(s):  
B. Aslan ◽  
R. Turan ◽  
O. Nur ◽  
M. Karlsteen ◽  
M. Willander
Keyword(s):  
Barrier Height ◽  
Strain Relaxation ◽  
Infrared Detector ◽  
Band Edge ◽  
Schottky Junction ◽  
Si Substrate ◽  
Strained Si ◽  
Internal Photoemission ◽  
Schottky Type ◽  
P Type

AbstractA Schottky type infrared detector fabricated on a p-type Si1−xGex substrate has a higher cut-off wavelength than one on a pure Si substrate because the barrier height of the Schottky junction on p-type Si1−xGex decreases with the Ge content and the induced strain in the Si1−xGex layer. We have studied the effect of the strain relaxation on the internal photoemission and I-V characteristics of a Pt/Si1−xGex Schottky junction with x=0.14. It is shown that the cut-off wavelength of the diode made on a strained Si0.86Ge0.14 layer is higher than that on a Si substrate as expected. This shows the possibility of tuning the range of these detectors in the mid-infrared region. However, the thermal relaxation in the Si0.86Ge0.14 layer is found to reduce the cut-off wavelength to lower values, showing that the difference between the Fermi level of the metal and the valence band edge increases with the layer relaxation. This effect should be taken into account when a Schottky type infrared detector is manufactured on a strained Si1−xGex film. I-V characteristics of the junctions also indicate an increase of the barrier height with the relaxation of Si1−xGex. These results demonstrate the band edge movements in a Si ixGex layer experimentally agree with the expected changes in the band structure of the Si1−xGex layer with strain relaxation.

Arsenic Diffusion and Segregation Behavior at the Interface of Epitaxial CoSi2 Film and Si Substrate

1993 ◽  
Vol 320 ◽  
Author(s):  
S. L. Hsia ◽  
T. Y. Tan ◽  
P. L. Smith ◽  
G. E. Mcguire
Keyword(s):  
Qualitative Agreement ◽  
Film Formation ◽  
Formation Temperature ◽  
Si Substrate ◽  
Free Surfaces ◽  
Si Substrates ◽  
Segregation Behavior ◽  
P Type ◽  
Physical Reasons ◽  
Source Materials

ABSTRACTArsenic diffusion and segregation properties at the interface of the epitaxial CoSi2 and Si substrate have been studied. Samples have been prepared using Co-Ti bimetallic source materials and two types of (001) Si substrates: n+ (doped by As to ∼2}1019 cm−3) and p. For the n+ Si cases, the lower limit of the CoSi2 film formation temperature is increased by ∼200°C to ∼700°C. SIMS results showed As segregation into Si. For epitaxial CoSi2 film formation at 900°C, the As concentration has increased by a factor of ∼2 within a distance of ∼30nm from the interface, while the incorporated As in the film is ∼30-50 times less than that in Si. For p-type Si substrate cases, the epitaxial CoSi2 film was first grown and followed by As+ implantation (into the film) and drive-in processes. It is observed that As was segregated to the CoSi2-Si interface and diffused into Si. This is in qualitative agreement with our results obtained from the n+ substrate experiments and the results of other authors involving the use of polycrystalline CoSi2 films. In the present cases, all implanted As were conserved at a drive in-temperature of 1000°C for up to 100 s. This is in contrast to the polycrystalline CoSi2 film results which involve a substantial As loss to the film free surfaces. The physical reasons of this difference have been discussed.

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