The current–voltage characteristics and inhomogeneous-barrier analysis of ddq/p-type Si/Al diode with interfacial layer

2007 ◽  
Vol 389 (2) ◽  
pp. 306-310 ◽  
Author(s):  
Fahrettin Yakuphanoglu
Keyword(s):  
Interfacial Layer ◽  
Barrier Analysis ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

Effect of series resistance on the forward current-voltage characteristics of Schottky diodes in the presence of interfacial layer

1996 ◽  
Vol 39 (1) ◽  
pp. 83-87 ◽  
Author(s):  
Enise Ayyildiz ◽  
Abdulmecit Türüt ◽  
Hasan Efeoğlu ◽  
Sebahattin Tüzemen ◽  
Mustafa Sağlam ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

Si1−xGex Bulk Crystals Growth and PN Junction Formation by Diffusing Phosphorus

1999 ◽  
Vol 607 ◽  
Author(s):  
S. Kato ◽  
T. Horikoshi ◽  
T. Ohkubo ◽  
T. Iida ◽  
Y. Takano
Keyword(s):  
Silicon Germanium ◽  
Bulk Crystals ◽  
Temperature Dependent ◽  
Alloy Scattering ◽  
Self Diffusion ◽  
Pn Junction ◽  
Current Voltage ◽  
Vertical Bridgman ◽  
Current Voltage Characteristics ◽  
P Type

AbstractThe bulk crystal of silicon germanium was grown by vertical Bridgman method with germanium composition, x, varying from 0.6 to 1.0. The temperature dependent variation of the mobility is indicative of alloy scattering dominantly for the bulk wafer. Phosphorus was diffused in as-grown p-type bulk wafer at 850 °C to form pn-junction, and the diffusion coefficient of phosphorus was evaluated as a function of x. The diffusion behavior of phosphorus in silicon germanium is closely correlated with the germanium self-diffusion with changing x. For specimens with lower content x, P concentration profiles indicated “kink and tail” shape, while it was not observed for higher x. For current-voltage characteristics measurement, an ideality factor was obtained.

The Current‐Voltage Characteristics of a Photoelectrochemical Cell Using p‐Type Porous Si

1985 ◽  
Vol 132 (2) ◽  
pp. 346-349 ◽  
Author(s):  
Nobuyoshi Koshida ◽  
Masahiro Nagasu ◽  
Takashi Sakusabe ◽  
Yuji Kiuchi
Keyword(s):  
Photoelectrochemical Cell ◽  
Porous Si ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1571-1574 ◽  
Author(s):  
Cole W. Litton ◽  
Ya.I. Alivov ◽  
D. Johnstone ◽  
Ümit Özgür ◽  
V. Avrutin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Zno Films ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Potential Applications ◽  
Current Voltage Characteristics ◽  
P Type

Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2 x 10-4 A/cm2 at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of ∼5 V, and a forward current of ∼2 A/cm2 at 8 V. Photosensitivity of the diodes, when illuminated from ZnO side, was studied at room temperature and photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV.

scholarly journals Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Krzesimir Nowakowski-Szkudlarek ◽  
Grzegorz Muziol ◽  
Mikolaj Żak ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Contact Layer ◽  
Light Emitting ◽  
Mg Doping ◽  
Current Voltage ◽  
Type Contact ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Diode Current

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 × 1020 cm–3.

scholarly journals Применение селективного контакта MoO-=SUB=-x-=/SUB=-/p-Si для оценки деградации приповерхностной области кремния

2020 ◽  
Vol 46 (24) ◽  
pp. 37
Author(s):  
Д.А. Кудряшов ◽  
А.С. Гудовских ◽  
А.А. Максимова ◽  
А.И. Баранов ◽  
А.В. Уваров ◽  
...  
Keyword(s):  
Surface Layer ◽  
Magnetron Sputtering ◽  
Silicon Surface ◽  
Silicon Oxide ◽  
Near Surface ◽  
Type Silicon ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Degree Of Damage ◽  
P Type

The possibility of evaluation the degree of damage to the near-surface layer of p-type silicon using a selective contact based on MoOx/p-Si is shown. A strong sensitivity of the current-voltage characteristics to the states on the silicon surface formed during the deposition of silicon oxide by magnetron sputtering is demonstrated.

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