The determination of electronic and interface state density distributions of Au/n-type GaAs Schottky barrier diodes

2006 ◽  
Vol 381 (1-2) ◽  
pp. 199-203 ◽  
Author(s):  
Ş. Karataş ◽  
A. Türüt
Keyword(s):  
Schottky Barrier ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diodes ◽  
Density Distributions

DENSITY OF SURFACE STATES IN Pd/SiGe/Si INTERFACE FROM CAPACITANCE MEASUREMENTS

2007 ◽  
Vol 14 (04) ◽  
pp. 765-768 ◽  
Author(s):  
A. SELLAI ◽  
M. MAMOR ◽  
S. AL-HARTHI
Keyword(s):  
Energy Distribution ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Surface States ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Schottky Barrier Diodes ◽  
Capacitance Measurements

Pd / Si 0.9 Ge 0.1/ Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C–V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

2006 ◽  
Vol 27 (5) ◽  
pp. 405-408 ◽  
Author(s):  
K. Martens ◽  
Brice De Jaeger ◽  
R. Bonzom ◽  
J. Van Steenbergen ◽  
M. Meuris ◽  
...  
Keyword(s):  
Extraction Method ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
High Density ◽  
Density Distributions
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