Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting

2006 ◽  
Vol 376-377 ◽  
pp. 630-634 ◽  
Author(s):  
O.D. Dubon ◽  
M.A. Scarpulla ◽  
R. Farshchi ◽  
K.M. Yu
Keyword(s):  
Ion Implantation ◽  
Pulsed Laser ◽  
Ferromagnetic Semiconductors ◽  
Laser Melting ◽  
Defect Control

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

Hyperdoping of Si by ion implantation and pulsed laser melting

2017 ◽  
Vol 62 ◽  
pp. 103-114 ◽  
Author(s):  
Wenjie Yang ◽  
Jay Mathews ◽  
J.S. Williams
Keyword(s):  
Ion Implantation ◽  
Pulsed Laser ◽  
Laser Melting

scholarly journals Double Ion Implantation and Pulsed Laser Melting Processes for Third Generation Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Eric García-Hemme ◽  
Rodrigo García-Hernansanz ◽  
Javier Olea ◽  
David Pastor ◽  
Álvaro del Prado ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Theoretical Calculations ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Third Generation ◽  
Laser Melting ◽  
Intermediate Band ◽  
Processing Cost ◽  
Novel Processing ◽  
Band Material

In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method based on a double ion implantation and, subsequently, a pulsed laser melting (PLM) process to obtain thicker layers of Ti supersaturated Si. We perform ab initio theoretical calculations of Si impurified with Ti showing that Ti in Si is a good candidate to theoretically form an intermediate band material in the Ti supersaturated Si. From time-of-flight secondary ion mass spectroscopy measurements, we confirm that we have obtained a Ti implanted and PLM thicker layer of 135 nm. Transmission electron microscopy reveals a single crystalline structure whilst the electrical characterization confirms the transport properties of an intermediate band material/Si substrate junction. High subbandgap absorption has been measured, obtaining an approximate value of 104 cm−1in the photons energy range from 1.1 to 0.6 eV.

scholarly journals Formation of the IR photodetecting structures based on silicon hyperdoped with tellurium

2019 ◽  
Vol 63 (4) ◽  
pp. 430-436
Author(s):  
Fadei F. Komarov ◽  
Nikita S. Nechaev ◽  
Irina N. Parkhomenko ◽  
Gennadii D. Ivlev ◽  
Liudmila A. Vlasukova ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Absorption Coefficient ◽  
Absorption Spectra ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Pulsed Laser ◽  
Photon Absorption ◽  
Laser Melting ◽  
Furnace Annealing ◽  
Impurity Atoms

The Si layers doped with Te up to the concentrations of (3–5)1020 cm–3 have been formed via ion implantation and pulsed laser melting. It is found, 70–90 % of the embedded impurity atoms are in substitution states in the silicon lattice. These layers have revealed significant absorption (35–66 %) in the wavelength λ range of 1100–2500 nm. In this case, the absorption coefficient increases with the λ growth. The absorption spectra of the implanted layers after pulsed laser melting, equilibrium furnace annealing, and rapid thermal annealing have been compared. It is shown that equilibrium furnace annealing increases the photon absorption by 4 % in the wavelength range of 1100–2500 nm in comparison with virgin Si. After rapid thermal annealing, the photon absorption in the IR-range increases only by 2 %.

scholarly journals Ion implantation and pulsed laser melting processing for the development of an intermediate band material

2012 ◽  
Author(s):  
E. García-Hemme ◽  
R. García-Hernansanz ◽  
J. Olea ◽  
D. Pastor ◽  
A. del Prado ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Intermediate Band ◽  
Band Material

Ga1−x Mn x P Synthesized by Ion Implantation and Pulsed-Laser Melting

2019 ◽  
pp. 157-180
Author(s):  
Peter R. Stone ◽  
Oscar D. Dubon ◽  
Michael A. Scarpulla ◽  
Kin Man Yu
Keyword(s):  
Ion Implantation ◽  
Pulsed Laser ◽  
Laser Melting

Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1−x synthesized by ion implantation and pulsed-laser melting

2008 ◽  
Vol 104 (11) ◽  
pp. 113722 ◽  
Author(s):  
Taeseok Kim ◽  
Kirstin Alberi ◽  
Oscar D. Dubon ◽  
Michael J. Aziz ◽  
Venkatesh Narayanamurti
Keyword(s):  
Ion Implantation ◽  
Schottky Barrier ◽  
Composition Dependence ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Barrier Heights
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