Kinetic crystallization behavior of SbOx thin films

2004 ◽  
Vol 352 (1-4) ◽  
pp. 206-209 ◽  
Author(s):  
Ming Fang ◽  
Qing-hui Li ◽  
Fu-xi Gan
Keyword(s):  
Thin Films ◽  
Crystallization Behavior ◽  
Kinetic Crystallization

The thickness dependence of the crystallization behavior in sandwiched amorphous Ge2Sb2Te5 thin films

2011 ◽  
Vol 406 (23) ◽  
pp. 4436-4439 ◽  
Author(s):  
G. Bai ◽  
R. Li ◽  
H.N. Xu ◽  
Y.D. Xia ◽  
Z.G. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Crystallization Behavior ◽  
Thickness Dependence

Picosecond laser pulse-driven crystallization behavior of SiSb phase change memory thin films

2011 ◽  
Vol 128 (3) ◽  
pp. 405-409 ◽  
Author(s):  
Huan Huang ◽  
Simian Li ◽  
Fengxiao Zhai ◽  
Yang Wang ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Pulse ◽  
Phase Change ◽  
Crystallization Behavior ◽  
Phase Change Memory ◽  
Picosecond Laser ◽  
Picosecond Laser Pulse ◽  
Change Memory

Effects of the Chelating Agent on the Fabrication of SBT Thin Films: Part I. Stoichiometry and Crystallization Behavior

2006 ◽  
Vol 335 (1) ◽  
pp. 23-33 ◽  
Author(s):  
M. G. Stachiotti ◽  
R. Machado ◽  
A. Frattini ◽  
N. Pellegri ◽  
O. de Sanctis
Keyword(s):  
Thin Films ◽  
Crystallization Behavior ◽  
Chelating Agent

Kinetic Crystallization Behavior of Phase-Change Medium

1999 ◽  
Vol 38 (Part 1, No. 3B) ◽  
pp. 1649-1651 ◽  
Author(s):  
Donyau Chiang ◽  
Tzuan-Reng Jeng ◽  
Der-Ray Huang ◽  
Yung-Yuan Chang ◽  
Chung-Ping Liu
Keyword(s):  
Phase Change ◽  
Crystallization Behavior ◽  
Kinetic Crystallization

Microstructure and Crystallization Behavior of Sol-Gel Prepared BaTiO3 Thin Films

1994 ◽  
Vol 346 ◽  
Author(s):  
M.C. Gust ◽  
L.A. Momoda ◽  
M.L. Mecartney
Keyword(s):  
Thin Films ◽  
Crystallization Behavior ◽  
Sol Gel ◽  
Heat Treating ◽  
Furnace Annealing ◽  
Si Substrates ◽  
Fine Grain ◽  
Conventional Furnace ◽  
Final Microstructure ◽  
Hydrolysis Conditions

ABSTRACTThin films of BaTiO3 were prepared by the sol-gel route using barium titanium methoxypropoxide in methoxypropanol. Sols with water of hydrolysis varying between h=0 and h=2 were spun onto (100) Si and Ge coated (100) Si substrates. XRD and analytical TEM were used to study the microstructure and crystallization behavior of these films. Polycrystalline BaTiO3 was obtained by heat treating the films at temperatures between 600 and 750°C using either conventional furnace annealing or rapid thermal annealing. Films prepared from sols having the highest water content tended to crystallize first. The BaTiO3 thin films exhibited a fine grain size on the order of 25–50 nm. No preferred orientation was observed. The effects of the hydrolysis conditions of the sol, the type of heat treatment, and the choice of substrate on the final microstructure of the films are discussed.

Optical Properties and Phase Transformation Kinetics of Ge-Sb-Te-(N) Alloy Thin Films Investigated by Ellipsometry

2003 ◽  
Vol 803 ◽  
Author(s):  
Sang Youl Kim
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Optical Properties ◽  
Phase Change ◽  
Crystallization Behavior ◽  
Ex Situ ◽  
Recent Analysis ◽  
Avrami Equation ◽  
Step Process ◽  
Kinetics Of

ABSTRACTThe recent research works of optical properties and crystallization kinetics of phase change Ge-Sb-Te-(N) alloy by using ellipsometry are reviewed.The complex refractive index spectra of phase-change Ge2Sb2+xTe5 thin films and those of the nitrogen Ge2Sb2Te5 thin films have been determined.The crystallization behavior of amorphous Ge2Sb2Te5 thin films investigated by in situ ellipsometry revealed that the crystallization process of Ge2Sb2Te5 near 140°C is a two-step process. The kinetic exponent of the Johnson-Mehl-Avrami equation was about 4.4 for the first stage and 1.1 for the second stage. Ex situ study confirmed the cascaded crystallization behavior of phase-change Ge2Sb2Te5 films.A passive type single wavelength ellipsometer adopting a DOAP (division-of-amplitude photopolarimeter) configuration with nanosecond time resolution is developed to monitor the phase transformation of Ge2Sb2Te5 caused by a high power nanosecond laser pulse in real time. The two-step process - the fast nucleation-dominant stage followed by the slow anomalous grain growth stage is confirmed.Based on the recent analysis of the ellipsometric isotherm at moderately elevated temperature, we found for the first time that the fast nucleation dominant crystallization of Ge2Sb2Te 5 can be better explained by a modified JMA equation that illustrates the nucleation dominated process where the creation rate of a new nucleus is proportional to the density of preexisting nuclei and growth rate is negligible.

Rapid Thermal Processing of Ferroelectric Thin Films

1991 ◽  
Vol 224 ◽  
Author(s):  
Zheng Wu ◽  
Roberto Pascual ◽  
C.V.R. Vasant Kumar ◽  
David Amd ◽  
Michael Sayer
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Crystallization Behavior ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Heating Rates ◽  
Pzt Films

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

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