Hot carriers and excitation of Si/SiOx interface defect photoluminescence in Si nanocrystallites

2003 ◽  
Vol 340-342 ◽  
pp. 1113-1118 ◽  
Author(s):  
T.V. Torchynska ◽  
A. Diaz Cano ◽  
M. Morales Rodriguez ◽  
L.Yu. Khomenkova
Author(s):  
Sergey G. Menabde ◽  
Min Seok Jang ◽  
Ju Yeong Kim ◽  
Sung Yoon Min

2017 ◽  
Vol 96 (7) ◽  
Author(s):  
Sergey G. Menabde ◽  
Hyunwoo Cho ◽  
Namkyoo Park

2017 ◽  
Vol 5 (1) ◽  
pp. 45-50
Author(s):  
Myron Voytko ◽  
◽  
Yaroslav Kulynych ◽  
Dozyslav Kuryliak

The problem of the elastic SH-wave diffraction from the semi-infinite interface defect in the rigid junction of the elastic layer and the half-space is solved. The defect is modeled by the impedance surface. The solution is obtained by the Wiener- Hopf method. The dependences of the scattered field on the structure parameters are presented in analytical form. Verifica¬tion of the obtained solution is presented.


2021 ◽  
Vol 93 (2) ◽  
pp. 223-230
Author(s):  
Palas Roy

Abstract Photogenerated charge carriers in organic photovoltaics (OPVs) suffer relaxation and recombination losses. However, extracting these carriers at higher energy (‘Hot-carriers’) has been found to be effective to overcome such loss pathways and improve efficiency of OPVs. Excess energy and long delocalization length promotes hot-carrier escape from Coulombic attraction and dissociation into free charges. Here, I have reviewed the ways to generate hot-carriers and their extraction in organic backbones. In-depth understanding of their energetics and dynamics will help designing hot-carrier photovoltaics.


2021 ◽  
Vol 104 (4) ◽  
Author(s):  
Aswathi K. Sivan ◽  
Lorenzo Di Mario ◽  
Yunyan Zhang ◽  
Daniele Catone ◽  
Patrick O’Keeffe ◽  
...  

2020 ◽  
Vol 102 (24) ◽  
Author(s):  
Maurizio Monti ◽  
K. D. G. Imalka Jayawardena ◽  
Edward Butler-Caddle ◽  
Rajapakshe M. I. Bandara ◽  
Jack M. Woolley ◽  
...  

1988 ◽  
Vol 31 (3-4) ◽  
pp. 497-499 ◽  
Author(s):  
V.N. Freire ◽  
A.R. Vasconcellos ◽  
R. Luzzi
Keyword(s):  

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