Polarization-diffusion effect on the dispersion of N- and -dielectric relaxation modes

2007 ◽  
Vol 377 (2) ◽  
pp. 531-544 ◽  
Author(s):  
S.I. Hernández ◽  
L.F. del Castillo
1993 ◽  
Vol 147 (1) ◽  
pp. 13-25 ◽  
Author(s):  
Kazuyuki Hiraoka ◽  
Hiraoka Takezoe ◽  
Atsuo Fukuda

1999 ◽  
Vol 59 (10) ◽  
pp. 6670-6674 ◽  
Author(s):  
Chen Ang ◽  
Zhi Yu ◽  
P. Lunkenheimer ◽  
J. Hemberger ◽  
A. Loidl

2005 ◽  
Vol 5 (6) ◽  
pp. 588-594 ◽  
Author(s):  
Rajbir Singh ◽  
V.K. Agarwal ◽  
K.K. Raina ◽  
B. Bahadur

1995 ◽  
Vol 34 (Part 1, No. 9B) ◽  
pp. 5424-5428 ◽  
Author(s):  
Hiroyuki Uehara ◽  
Yoshihiro Hanakai ◽  
Jun Hatano ◽  
Shin'ichi Saito ◽  
Katsuyuki Murashiro

The previously formulated kinetic theory of isothermal atomic transport via point defects is here applied to the description of anelastic relaxation in crystals containing defect pairs. Defect reactions leading to the dissociation and reformation of these pairs are included, but the symmetry and elastic strengths of the relaxation modes are unaffected, with the exception of modes having the full point-group symmetry of the crystal. In this respect anelastic relaxation is different from dielectric relaxation, the strength of which can be substantially affected by these reactions for reasons connected with the contributions which the dissociated defects make to the total measured electric current. The characteristic relaxation times associated with the elastically active modes are, however, shortened by these reactions.


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