scholarly journals WITHDRAWN: Modeling of Track Formation in Semiconductors Irradiated with Swift Heavy Ions

2014 ◽  
Vol 55 ◽  
pp. 291-295
Author(s):  
S. Kadid ◽  
A. Meftah
Keyword(s):  
Heavy Ions ◽  
Swift Heavy Ions ◽  
Track Formation

scholarly journals Nanomelting and track formation in insulators by swift heavy ions

2012 ◽  
Vol 388 (13) ◽  
pp. 132012
Author(s):  
Georg Wachter ◽  
Károly Tökési ◽  
Gerhard Betz ◽  
Christoph Lemell ◽  
Joachim Burgdörfer
Keyword(s):  
Heavy Ions ◽  
Swift Heavy Ions ◽  
Track Formation

Mechanisms of Energy Transfer in Solids Irradiated with Swift Heavy Ions

1997 ◽  
Vol 504 ◽  
Author(s):  
G. Szenes
Keyword(s):  
Energy Transfer ◽  
Cross Section ◽  
Heavy Ions ◽  
Energy Deposition ◽  
Thermal Spike ◽  
Swift Heavy Ions ◽  
Thermal Spike Model ◽  
Spike Model ◽  
Track Formation ◽  
Velocity Effect

ABSTRACTThe damage cross section velocity effect is studied in LiNbO3, Y3Fe5O12 and SiO2 α-quartz. The application of our thermal spike model reveals that the efficiency of track formation varies by a factor of two in the range of 2–4 MeV/nucleon. The effect is explained by the varying fraction of energy deposition to the lattice involving lattice ions.

Track formation in III-N semiconductors irradiated by swift heavy ions and fullerene and re-evaluation of the inelastic thermal spike model

2015 ◽  
Vol 50 (15) ◽  
pp. 5214-5227 ◽  
Author(s):  
M. Sall ◽  
I. Monnet ◽  
F. Moisy ◽  
C. Grygiel ◽  
S. Jublot-Leclerc ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Thermal Spike ◽  
Swift Heavy Ions ◽  
Thermal Spike Model ◽  
Spike Model ◽  
Track Formation

Track formation and surface evolution in indium phosphide irradiated by swift heavy ions

2005 ◽  
Vol 40 (2-6) ◽  
pp. 770-774 ◽  
Author(s):  
A.S. Khalil ◽  
L.T. Chadderton ◽  
A.M. Stewart ◽  
M.C. Ridgway ◽  
D.J. Llewellyn ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Heavy Ions ◽  
Surface Evolution ◽  
Swift Heavy Ions ◽  
Track Formation

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

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